June 2001 FDS6670A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. 13 A, 30 V. RDS(ON) = 0.008 @ VGS = 10 V RDS(ON) = 0.010 @ VGS = 4.5 V. Fast switching speed. Low gate charge (35 nC tyical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 Absolute Maximum Ratings SuperSOTTM-8 SOT-223 SOIC-16 5 4 6 3 7 2 8 1 TA = 25oC unless other wise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous PD Power Dissipation for Single Operation (Note 1a) - Pulsed TJ,TSTG SO-8 FDS6670A Units 30 V 20 V 13 A 50 (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) 1 Operating and Storage Temperature Range W -55 to 150 C THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 C/W RJC Thermal Resistance, Junction-to-Case (Note 1) 25 C/W (c) 2001 Fairchild Semiconductor Corporation FDS6670A Rev.E Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min 30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 A BVDSS/TJ Breakdown Voltage Temp. Coefficient ID = 250 A, Referenced to 25 oC V IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA TJ = 55C ON CHARACTERISTICS mV / oC 20 1 A 10 A 100 nA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A VGS(th)/TJ Gate Threshold Voltage Temp. Coefficient ID = 250 A, Referenced to 25 oC 1 RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, I D = 13 A 1.6 3 V mV /oC -4.5 TJ =125C VGS = 4.5 V, I D = 10.5 A ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V 50 gFS Forward Transconductance VDS = 15 V, I D = 13 A 20 0.0063 0.008 0.009 0.014 0.0082 0.01 A 50 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = 15 V, VGS = 0 V, f = 1.0 MHz Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS 3200 pF 820 pF 400 pF (Note 2) tD(on) Turn - On Delay Time tr Turn - On Rise TiV VDS = 10 V, I D= 1 A tD(off) Turn - Off Delay Time tf Turn - Off Fall Time 42 68 ns Qg Total Gate Charge VDS = 15 V, I D = 13 A, 35 50 nC Qgs Gate-Source Charge VGS = 5 V 9 nC Qgd Gate-Drain Charge 16 nC GS = 10 V , RGEN = 6 15 27 ns 15 27 ns 85 105 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.71 2.1 A 1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a. 50OC/W on a 1 in2 pad of 2oz copper. b. 105OC/W on a 0.04 in2 pad of 2oz copper. c. 125OC/W on a 0.006 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. FDS6670A Rev.E Typical Electrical Characteristics 5.5V 40 2.5 4.5V 3.5V R DS(ON) , NORMALIZED VGS =10V 3.0V 30 20 10 2.5V DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 50 VGS = 3.0V 2 3.5 V 1.5 4.0 V 4.5 V 6.0 V 10V 1 0.5 0 0 0.5 1 1.5 0 2 10 20 R DS(ON) , ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED 50 0.03 1.6 DRAIN-SOURCE ON-RESISTANCE 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. I D = 13A VGS = 10V 1.4 1.2 1 0.8 0.6 -50 I D = 6.5A 0.025 0.02 0.015 0.005 0 -25 0 25 50 75 100 125 150 TA = 125C 0.01 25C 2 4 6 8 10 VGS , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (C) Figure 3. On-Resistance Variation Temperature. with Figure 4 . On Resistance Variation with Gate-to-Source Voltage. 40 I S , REVERSE DRAIN CURRENT (A) 60 VDS = 5.0V ID , DRAIN CURRENT (A) 30 I D , DRAIN CURRENT (A) VDS , DRAIN-SOURCE VOLTAGE (V) 50 40 30 20 TJ =125C 25C 10 -55C VGS = 0V 5 1 TJ = 125C 0.1 25C -55C 0.01 0.001 0.0001 0 1 1.5 2 2.5 3 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5 . Transfer Characteristics. 3.5 4 0 0.2 0.4 0.6 0.8 1 1.2 V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 6 . Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6670A Rev.E Typical Electrical Thermal Characteristics 7000 V DS= 5V I D = 13A 8 4000 10V 15V CAPACITANCE (pF) V GS , GATE-SOURCE VOLTAGE (V) 10 6 4 2 C iss 2000 1000 Coss 500 Crss f = 1 MHz V GS = 0 V 200 100 0.1 0 0 10 20 30 40 50 60 70 80 0.2 Figure 7. Gate Charge Characteristics. 100 POWER (W) I D , DRAIN CURRENT (A) 1s 10s DC VGS =10V SINGLE PULSE R JA= 125C/W A TA = 25C 0.1 10 30 30 20 10 0.5 1 2 5 10 30 0 0.001 50 0.01 VDS , DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 300 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 5 SINGLE PULSE RJA =125C/W TA = 25C 40 100 ms 2 1 0.5 0.01 0.05 2 Figure 8. Capacitance Characteristics. 100 us 1m s 10m s 10 5 0.1 0.05 1 50 IT LIM N) S(O D R 30 0.5 VDS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 0.2 0.1 0.05 0.02 0.01 D = 0.5 0.2 R JA (t) = r(t) * R JA R JA = 125C/W 0.1 0.05 0.02 P(pk) 0.01 t1 Single Pulse 0.005 0.002 0.001 0.0001 t2 TJ - TA = P * R JA(t) Duty Cycle, D = t1 /t2 0.001 0.01 0.1 1 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6670A Rev.E SOIC-8 Tape and Reel Data SOIC(8lds) Packaging Configuration: Figure 1.0 ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES Packaging Description: SOIC-8 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. Embossed ESD Marking TION NS ATTEE NPRECAUTIO G RV HANDLIN OBSEFO IC R OSTAT ELECTR ITIVE SENS ES DEVIC Antistatic Cover Tape These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. Static Dissipative Embossed Carrier Tape F63TNR Label Customized Label F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 Pin 1 SOIC (8lds) Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Standard (no flow code) TNR 2,500 L86Z F011 D84Z Rail/Tube TNR TNR 95 4,000 500 13" Dia - 13" Dia 7" Dia 355x333x40 530x130x83 355x333x40 193x183x80 Max qty per Box 5,000 30,000 8,000 2,000 Weight per unit (gm) 0.0774 0.0774 0.0774 0.0774 Weight per Reel (kg) 0.6060 - 0.9696 0.1182 Reel Size Box Dimension (mm) SOIC-8 Unit Orientation Barcode Label Note/Comments Barcode Label Barcode Label 355mm x 333mm x 40mm Intermediate container for 13" reel option F63TNR Label sample 193mm x 183mm x 80mm Pizza Box for Standard Option SOIC(8lds) Tape Leader and Trailer Configuration: Figure 2.0 LOT: CBVK741B019 QTY: 2500 FSID: FDS9953A SPEC: D/C1: Z 9842AB D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Components Trailer Tape 640mm minimum or 80 empty pockets (c)2001 Fairchild Semiconductor Corporation Leader Tape 1680mm minimum or 210 empty pockets January 2001, Rev. C SOIC-8 Tape and Reel Data, continued SOIC(8lds) Embossed Carrier Tape Configuration: Figure 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type SOIC(8lds) (12mm) A0 5.30 +/-0.10 B0 6.50 +/-0.10 W 12.0 +/-0.3 D0 D1 1.55 +/-0.05 E1 1.60 +/-0.10 E2 1.75 +/-0.10 F 10.25 min P1 5.50 +/-0.05 P0 8.0 +/-0.1 4.0 +/-0.1 K0 2.1 +/-0.10 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). T Wc 0.450 +/0.150 9.2 +/-0.3 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SOIC(8lds) Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 - 0.606 11.9 - 15.4 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 - 0.606 11.9 - 15.4 12mm 7" Dia 7.00 177.8 12mm 13" Dia 13.00 330 1998 Fairchild Semiconductor Corporation Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) January 2001, Rev. C SOIC-8 Package Dimensions SOIC-8 (FS PKG Code S1) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0774 9 (c)2000 Fairchild Semiconductor International September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3