IRFL4310PbF
HEXFET® Power MOSFET
PD - 95144
S
D
G
VDSS = 100V
RDS(on) = 0.20Ω
ID = 1.6A
04/22/04
Description
lSurface Mount
lDynamic dv/dt Rating
lFast Switching
lEase of Paralleling
lAdvanced Process Technology
lUltra Low On-Resistance
lLead-Free
SOT-223
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
Absolute Maximum Ratings
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Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
Parameter Typ. Max. Units
RθJA Junction-to-Amb. (PCB Mount, steady state)* 93 120
RθJA Junction-to-Amb. (PCB Mount, steady state)** 48 60
Thermal Resistance
°C/W
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 2.2
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 1.6
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 1.3
IDM Pulsed Drain Current 13
PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W
PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W
Linear Derating Factor (PCB Mount)* 8.3 mW/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy47 mJ
IAR Avalanche Current 1.6 A
EAR Repetitive Avalanche Energy* 0.10 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
A
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Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.20 ΩVGS = 10V, ID = 1.6A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 1.5 ––– ––– S VDS = 50V, ID = 0.80 A
––– ––– 25 µA VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
QgTotal Gate Charge ––– 17 25 ID = 1.6A
Qgs Gate-to-Source Charge ––– 2.1 3.1 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– 7.8 12 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 7.8 ––– VDD = 50V
trRise Time ––– 18 ––– ns ID = 1.6A
td(off) Turn-Off Delay Time ––– 34 ––– RG = 6.2 Ω
tf Fall Time ––– 20 ––– RD = 31 Ω, See Fig. 10
Ciss Input Capacitance ––– 330 ––– VGS = 0V
Coss Output Capacitance ––– 92 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 54 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 1.6A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
VDD = 25V, starting TJ = 25°C, L = 9.2 mH
RG = 25Ω, IAS = 3.2A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 1.6A, VGS = 0V
trr Reverse Recovery Time ––– 72 110 ns TJ = 25°C, IF = 1.6A
Qrr Reverse RecoveryCharge ––– 210 320 nC di/dt = 100A/µs
––– –––
––– ––– 13
0.91
A
Source-Drain Ratings and Characteristics
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SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
A = ASSEMBLY SITE
CODE
TOP BOTTOM
LOGO 314P AX X X X
PART NUMBER
INT ERNAT IONAL
RE CT IF IER
HEXFET PRODUCT MARKING
F L014
T HIS IS AN IRF L014
LOT CODE
DAT E CODE
(YYWW)
YY = YEAR
WW = WEEK
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SOT-223 (TO-261AA) Tape & Reel Information
4.10 (.161)
3.90 (.154) 1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
12.10 (.475)
11.90 (.469)
7.10 (.279)
6.90 (.272)
1.60 (.062)
1.50 (.059)
TYP.
7.55 (.297)
7.45 (.294)
7.60 (.299)
7.40 (.292)
2.30 (.090)
2.10 (.083)
16.30 (.641)
15.70 (.619)
0.35 (.013)
0.25 (.010)
FEED DIRECTION
TR
13.20 (.519)
12.80 (.504)
50.00 (1.969)
MIN.
330.00
(13.000)
MAX.
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
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NOTES :
1. O UT LIN E CO M FO RMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANG E DISTORTION @ OUTER EDGE.
15.40 (.607)
11.90 (.469)
18.40 (.724)
M AX.
14.40 (.566)
12.40 (.488)
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Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/04
