NPN Silicon Planar Medium Power Transistors ZTX650 ZTX651 ZTX652 ZTX653 FEATURES 1.5W power dissipation at T,,,, = 25C* 2V continuous ic Excellent gain characteristics to 2A High Veg: up to 100V Low saturation voltages Guaranteed hr_ specified up to 2A Fast switching Exceptional price-to-power ratio Complementary types DESCRIPTION A range of high performance medium power transistors encapsulated in the popular E-line (TO-92) plastic package. The 1.5W > performance and outstanding electrical characteristics permit use in a wide variety of industrial and consumer applications including jamp and solenoid drivers, audio amplifiers and complementary drivers for hi-fi amplifiers. ABSOLUTE MAXIMUM RATINGS Plastic E-Line (TO-92 Compatible) In addition to achieving excellent linearity the devices are designed to function as high speed power switching transistors. The specially selected silicone encapsulation provides resistance to severe environments comparable with metal can devices. Complementary to ZTX750 series. Parameter Symbol | ZTX650 | ZTX651 | ZTX652 | ZTX653 |} Unit Collector-base voltage Vso 60 80 100 120 Vv Collector-emitter voltage Veto 45 60 80 100 Vv Emitter-base voltage Vepo Vv Peak pulse current (see note) lom 6 A Continuous collector current Ie A Practical power dissipation* Prot 1.5 Ww Power dissipation at T,,,.) = 25C Prot 1 Ww derate above 25C 5.7 mW/C at Tyase = 25C 2.5 w Operating & storage temp. range th: terg -55 to +200 C Note: Consult Safe Operating Area graph for conditions. *The power which can be dissipated assuming device mounted in typical manner on P.C.B. with copper equal to 1 sq.inch minimum. SE123ZTX650 ZTX651 ZTX652 ZTX653 CHARACTERISTICS (at T,,,, =25C unless otherwise stated). ZTX650 ZTX651 P Symbol Unit Conditions arameter ymbo Min. | Typ. | Max. | Min. | Typ. | Max. ni ondition Collector-base Viericao | 60 - 80 - - Vio] Ie = 100nA breakdown voltage Collector-emitter Viericeo | 45 ~ 60 - - Vo] le =10mA breakdown voltage Emitter-base Visricgo 5 - 5 - - Vo] lp = 100pA breakdown voltage Collector cut-off lego - - 0.1 = - - HA | Veg=45V current - - 10 - - - BA | Veg = 45V, Tap = 100C - - - 0.1 BA | Veg =60V - - - - 10 BA | Veg = GOV, Tip = 100C Emitter cut-off leno - - 0.1 - - 0.1 HA | Vig=4V current Collectar-emitter Veetsat) - 10.12] 0.3 - 10.12] 0.3 \o= 1A, ly = 100mA* saturation voltage ~ [0.23] 0.5 - 0.23) 0.5 I, = 2A, lg =200mA* Base-emitter Veeisat) - 0.90 | 1.25 [0.90] 1.25 Vv l= 1A, ly = 100mA* saturation valtage Base-emitter turn-on | Vaeion) - 0.8 1 - 0.8 1 Vie] le= 1A, Veg = 2V* voltage Static forward Hee 70 | 200 ~ 70 | 200 - lg =50mA, Vo, = 2V* current transfer ratio 100 | 200 | 300 | 100 | 200 } 300 Io = 500mA, Veg = 2V* so | 170 80 | 170 - le=1A, Vep=2V* 40 80 40 80 - Ip=2A, Vop=2V* Transition frequency | f; 140 | 175 - 140 | 175 - MHz | I. = 100mA, Veg = 5V f= 100MHz Switching times Ton - 45 - - 45 - NS | 1,=500m<A, Ig, = 580mA Tort - | 800 - | soo] - ns_ | !g2=SOmA, Vcc = 10V Output capacitance | C,,, - 30 ~ - 30 pF | Veg = 10V, f= 1MHz *Measured under pulsed conditions. Pulse width = 300us. Duty cycle < 2%. THERMAL CHARACTERISTICS (ZTX650/3) Parameter Symbol Maximum Unit Therma resistance: Junction to ambient, Ring-arnby1 175 ociw Junction to ambient, Reigj-amb)2 116 ciw Junction to case thij-case) 70 oCIW tDevice mounted on P.C.B. with copper equal to 1 sq.inch minimum. SE124CHARACTERISTICS (at T. ZTX650 ZTX651 ZTX652 ZTX653 = 25C unless otherwise stated). amb ZTX652 ZTX653 P. t Symbol Unit Conditions arameter ymbo" | min. | Typ. | Max. | Min. | Typ. | Max. | Collector-base Vigrrcso | 100 | - 120 | ~ - Vio] tg = 100pA breakdown voltage Collector-emitter Viericeo | 80 - - 100 | - - Vo le=10mA breakdown voltage Emitter-base Viprieso 5 - - 5 - - Vos] fp = 100pA breakdown voltage Collector cut-off lego > = 0.1 ~ - = BA | Vog = 80V current - - 10 ~ - - HA | Vcog= 80V, Tiny = 100C - - - ~ - 0.1 HA | Veg= 100V ~ - - ~ - 10 HA | Vog= 100V, T,,,, = 100C Emitter cut-off leBo ~ - 0.1 ~ - 0.1 HA | Veg=4V current Collector-emitter Veetsat ~ [0.13 | 0.3 ~- |0.13 | 0.3 Ic = 1A, Ig = 100mA* saturation voltage ~ |0.23] 0.5 - 10.23) 0.5 |, = 2A, lp = 200mA* Base-emitter Vectean ~ |9.90/1.25] - |0.90] 1.25] Vo | 1p=1A, Ig= 100mA* saturation voltage Base-emitter turn-on | Vejen) ~ 0.8 1 - 0.8 1 Vio] Ie=1A, Veg = 2V* voltage Static forward Hee 70 | 200 - 70 | 200 - Ip =50mA, Vog = 2V* current transfer ; ratio 100 | 200 | 300 | 100 | 200 | 300 1, =500mA, V>~=2V 55 | 110 - 55 | 110 ~ IG= 1A, Vcg = 2V* 25 55 - 25 55 - I= 2A, Veg = 2V* Transition frequency | f; 140 | 175 - 140 | 175 - MHz | Ip = 100mA, V., = 5V f= 100MHz Switching times Ton - 80 - - 80 - ns | |.=500mA, I,,=50mA Tort - |1200} - - |1200) - | ns | ta2=50MA, Vee = 10V Output capacitance | C,,, - - 30 _ - 30 pF | Veg= 10V, f= MHz *Measured under pulsed conditions. Pulse width = 300us. Duty cycle< 2%. SE125ZTX650 ZTX651 ZTX652 ZTX653 35 30 MAXMUM 2 POWER DISSIPATION WATTS, 15 1-0 TEMPERATURE (T) C son Dissipation derating curve for all types COLLECTOR CURRENT (Ic) AMPS ZTX653 a 1 10 100 COLLECTOR-EMITTER VOLTAGE {Vc} VOLTS. Safe operating area at T,,,,= 25C (single pulse) SE126ZTX650 ZTX651 ZTX652 ZTX653 STATIC FORWARD CURRENT TRANSFER RATIO (hee) 5 7 9 2 10mA 2 3 & 6 7 8 Sooma 2 a 4 6 8 1A COLLECTOR CURRENT (Ic) Static forward current transfer ratio plotted against collector current for ZTX650/ZTX651 STATIC FORWARO CURRENT TRANSFER RATIO (nee) 6 89 2 10mA 2 3 4 5 6748 00mA 2 3 4 8 7 COLLECTOR CURRENT (Ic) Static forward current transfer ratio plotted against collector current for ZTX652/Z2TX653 SE127ZTX650 ZTX651 ZTX652 ZTX653 TRANSITION FREQUENCY Vee 100 MHz 40 80 120 160 200 240 280 320 COLLECTOR CURRENT (Ic)mA 6054/1 Typical transition frequency plotted against collector current for ZTX650 +10V TL OSCILLOSCOPE ~S2V = 6346/1 Switching speeds test circuit SE128ZTX650 ZTX651 ZTX652 ZTX653 ta tt 120 80 60 40 i tr Ic Ips =!e2 = 45 PULSE WIDTH = 60ps 100mA 1A COLLECTOR CURRENT (Ic) Typical switching speeds (ZTX650/ZTX651) 120 80 40 ~ iC le = a2 * 49 PULSE WIDTH= 60ps 1OOmA 1A COLLECTOR CURRENT (Ic) Typical switching speeds (ZTX652/ZTX653) SE129ZTX650 ZTX651 ZTX652 ZTX653 O6 COLLECTOR- EMITTER SATURATION VOLTAGE (Vcersaty VOLTS) Te oO be 5 02 25C_AMBIENT 2TX 650/651 2 4 2 468 2 468 2 468 2 466 2 468 uA 10024 mA OMA 100m 10A COLLECTOR CURRENT (Ic) 6018 Typical collector-emitter saturation voltages plotted against collector current BASE -EMITTER SATURATION [petsan! VOLTS oe 06 Os 2 668{ 2 668| 2 66 4 468 468 1OyA HOOpA mA 10mA 100mA 1A 104 COLLECTOR CURRENT IIc) 6012 Typical base-emitter saturation voltages plotted against collector current for all types SE130ZTX650 ZTX651 ZTX652 ZTX653 BASE-EMITTER TURN ON VOLTAGE WVeetony VOLTS 0-8 O6 aA |} 2 468} 2 468] 2 468| 2 468] 2 468] 2 468 10 uA 1O0pA ima 10mA 100 mA 1A 0A COLLECTOR CURRENT (Ic) 6008 Typical base-emitter turn-on voltages plotted against collector current for all types SE131ZTX650 ZTX651 ZTX652 ZTX653 THERMAL BERISTANCE ciw 200 180 160 140 120 100 80 60 40 20 0 2 468/ 2 468] 2 468/ 2 468] 2 468/ 2 46 0s ims 10ms 100ms 1s 100s PULSE WIDTH 6007 Maximum transient thermal impedance curves SE132