MBR730 thru MBR760
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
MBR730
30
21
30
Maximum Average Forward
Rectified Current (See Fig.1)
@T
C
=
125 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward
Voltage (Note 1)
7.5
150
-
0.57
0.84
0.72
T
J
Operating Temperature Range
-55 to +150
C
T
STG
Storage Temperature Range
-55 to +175
C
T
J
=25 C
C
J
Typical Junction Capacitance (Note 3)
400
pF
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
Voltage Rate of Change (Rated VR )
T
J
=125 C
dv/dt 10000
V/us
I
F
=7.5A @
I
F
=7.5A @
I
F
=15A @
I
F
=15A @
MBR735
35
24.5
35
MBR740
40
28
40
MBR745
45
31.5
45
MBR750
50
35
50
MBR760
60
42
60
V
0.75
0.65
-
-
I
R
@T
J
=125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C 0.1
15
mA
0.5
50
Typical Thermal Resistance (Note 2)
3.5
C/W
R
0JC
T
J
=25 C
TO-220AC
All Dimensions in millimeter
TO-220AC
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
14.22 15.88
10.67
9.65
2.54 3.43
6.86
5.84
8.26 9.28
- 6.35
12.70 14.73
0.51
5.33
N
M
L
K
J
I 1.14
4.83
0.64 0.30
3.53 4.09
3.56 4.83
1.14 1.40
2.92
2.03
A
B
C
K
J
I
G
F
E
D
N
M
L
H
PIN 1
PIN 2 CASE
PIN
1 2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
- 30
to
60
Volts
FORWARD CURRENT
- 7.5
Amperes
NOTES : 1. 300us Pulse Width, Duty Cycle 2%
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
T
J
=125 C
SEMICONDUCTOR
LITE-ON
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
REV. 4,Aug-2007, KTHA02
RATING AND CHARACTERISTIC CURVES
MBR730 thru MBR760
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.2 0.3 0.7 0.8
1.0
10
100
0.4 0.5 0.6
0.1
1.0
0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.1
1.0
10
100
0.1
PULSE WIDTH 300us
2% Duty cycle
T
J
= 25 C
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0
0.001
0.1
1.0
100
10
60 80 100
T
J
= 125 C
0.01
T
J
= 25 C
T
J
= 75 C
MBR730 ~ MBR745
MBR750 ~ MBR760
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLTAGE , VOLTS
10
1100
10000
1000
100
0.1 4
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
25
75 100 125 150
2
0
50
8
175
6
0
4
RESISTIVE OR
INDUCTIVE LOAD
10
CASE TEMPERATURE , C
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE
CURRENT,
AMPERES
15 10 50 100
220
0
50
100
150
8.3ms Single Half-Sine-Wave
T
J
= 25 C, f= 1MHz