DSB 60 C 60HB
advanced
Schottky
Symbol Definition R a t i n g s
Features / Advantages:
● Very low Vf
● Extremely low switching losses
● Low Irm-values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Low losses
typ. max.
I
FSM
I
R
A
mA
V
320
I
FAV
A
V
F
0.77
R
thJC
0.95 K/W
V
R
=
T
VJ
=
123
min.
30
ms (50 Hz), sine
Applications:
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
V
RRM
V60
20
T
VJ
V°C=
T
VJ
°C=mA
°C
50
Package:
Part number
V
R
=
I
F
=A
V
T
C
=125°C
P
tot
130 W
T
C
°C=
E
AS
tbd mJ
T
VJ
°C
=
I
AS
=A;L = µH
I
AR
A
V
A
=tbd
f = 10 kHz
1.5·V
R
typ.;
T
VJ
150 °C
-55
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
V
I
V
RRM
FAV
F
=
=
=
60
30
0.67
30
T
VJ
=45°C
100
DSB 60 C 60HB
V
A
V
60
V60
25
25
t
p
=10
25
max. repetitive rev ers e voltage
reverse current
forward voltage
average forward current
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
non-repetitive avalanche energy
repet i t ive ava lanc he curren t
Conditions Unit
(Marking on product)
0.67
T
VJ
°C
=25
C
J
pF
j
unction capacitance V
R
= V; f = 1 MHz T
VJ
=°C
100
125
I
F
=A60 T
VJ
=°C
25 V
1.18
I
F
=A30
I
F
=A60 V0.92
V
F0
V
0.46
T
VJ
= 150 °C
r
F
6.2
Ω
m
TO-247AD
threshold voltage
slope resistance for power loss calculation only
25
rectangular, d = 0.5
2x
● Industry standard outline
● Epoxy meets UL 94V-0
● RoHS compliant
IXYS reserves the right to change limits, conditions and dimensi
© 2005 IXYS all rights reserved
0614
Data according to IEC 60747and per diode unless otherwise specified
http://store.iiic.cc/
DSB 60 C 60HB
advanced
I
RMS
A
per pin* 50
R
thCH
K/W
0.25
M
D
Nm1.2
mounting torque 0.8
T
stg
°C
150
storage temperature -55
Weight g
6
C
E
F
D
B
A
K
G
H
J
L
N
M
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
Symbol Definition Ratings
typ. max.min.
Conditions
RMS current
thermal resistance case to heatsink
Unit
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Outlines TO-247AD
F
C
N
120
mounting force with clip 20
IXYS reserves the right to change limits, conditions and dimensi
© 2005 IXYS all rights reserved
0614
Data according to IEC 60747and per diode unless otherwise specified
http://store.iiic.cc/
