SYNSEMI SEMICONDUCTOR 3EZ Series Vz : 3.9 - 400 Volts Po: 3 Watts FEATURES : * Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current MECHANICAL DATA * Case DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead: Axial lead solderable per MIL-STD-202, method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position - Any * Weight : 0.339 gram MAXIMUM RATINGS Rating at 25 C ambient ternperature unless othenwise specified SILICON ZENER DIODES DO - 41 4.00 (25.4) at07 (2.7) | Ii | wy 0.080 (2.0) 7 1 i | 0.205 (5.2) 0.4166 (4.2) 4.00 (25.4) 0.084 (0.86) i 0.028 (0.71) > oe Dimensions in inches and ( millimeters ) Rating Symbol Value Unit DC Power Dissipation at TL = 74 C (Note1) Po 3.0 Watts Maximum Forward Voltage at IF = 200 mA VF 1.5 Volts Junction Temperature Range Ti -55to+175 SG Storage Temperature Range Ts -5to+175 8@ Note : (1) TL =Lead temperature at 4/8." (9.8mm) from body Po, MAXIMUM DISSIPATION (WATTS) 40 80 L=LEAD LENGTH TO HEAT SINK 120 160 200 Ti, LEAD TEMPERATURE (?C) Fig.1 Power Temperature Derating CurveSYNSEMI SEMICONDUCTOR ELECTRICAL CHARACTERISTICS Rating at =25 9C ambient temperature unless otherwise specified Nominal Zener Maximum Zener Maximum Reverse Maximum DC TYPE Voltage Impecance Leakage Current Zener Current Ye @ let | lt Zz @ let | ZK @ IZK lz IR @ Vr Lz wy) (mA) (2) | (a) (mA) (WA) ) (mA) 3EZ3.9D5 ag 192 45 400 1.0 80 4.0 630 3E2Z4.3D5 43 1i4 45 400 4.0 30 1.0 590 3EZ4.7D5 AT 160 40 500 1.0 20 1.0 560) 3EZ5.1D5 5.1 147 36 550) 1.0 5.0 1.0 620 3EZ5.6D5 56 134 25 600 1.0 5.0 20 480 3EZ6.2D5 B2 121 Te 700 1.0 5.0 3.0 435 3EZ6.8D5 68 110 20 7o0 4.0 20 40 393. 3E2Z7.5D5 TS 400 20 700 O06 20 50 360 3EZ8.2D5 82 31 23 700 06 20 60 330 3EZ9.1D5 a1 82 25 700 0.8 20 7o 297 3EZ10D5 410 75 35 700 03 20 76 270 3EZ11D5 qd 88 40 700 0.25 1.0 84 225 3EZ12D5 12 63 45 700 025 41.0 94 246 3EZ13D5 13 58 45 700 025 Os 94 208. 3EZ14D5 d4 53 5.0 700 0.25 Os 10.6 193 3EZ15D5 16 50 56 7o0 O25 Os d14 180 3EZ16D5 16 47 55 700 025 Os 122 169 3EZ17D5 38 44 6.0 750) 0.25 Os 13.0 169 3EZ18D5 18 42 6.0 750) O25 08 13.7 150 3EZ19D5 19 40 7o 750 0.25 Os j44 142 3EZ20D5 20 aT 7o 750 O25 O48 Toe 135 3EZ22D5 ae ad Bo 750 025 Os 16.7 123 3EZ24D5 24 34 9.0 750) 0.25 Os 18.2 112 3EZ27D5 ea 28 10 750) O25 08 20.6 100 3EZ28D5 28 at es 750 0.25 Os 21.0 96 3EZ30D5 30 25 16 4000 025 Os 225 90 3EZ33D5 33 23 20 7000 0.25 O08 25.1 82 3EZ36D5 36 24 22 4000 025 Os 274 75 3EZ39D5 39 1g 28 4000 025 Os 2OF 69 3EZ43D5 43 if 33 1500 0.25 Os 327 63 3EZ47D5 47 46 38 4500 025 Os 35.6 Sf 3EZ51D5 51 16 46 4500 0.25 O08 38.8 53 3EZ56D5 56 13 50 2000 025 Os 426 48 3EZ62D5 82 12 55 2000 O25 08 47 Aq 3EZ68D5 68 11 70 2000 0.25 Os 517 40 3EZ75D5 7S 10 85 2000 O25 O48 56.0 36 3EZ82D5 82 9.4 95 3000 025 Os 622 33 3EZ91D5 91 8.2 416 3000 0.25 Os 892 30 3EZ100D5 400 75 160 3000 O25 08 76.0 2tSYNSEMI SEMICONDUCTOR ELECTRICAL CHARACTERISTICS Rating at =25C ambient temperature unless otherwise specified Nominal Zener Maximum Zener Maximum Reverse Maximum DC TYPE Voltage Impecance Leakage Current Zener Current Ye @ let | lt Zz @ let | ZK @ IZK | lz IR @ Vr Lz wy) (mA) (2) | (a) | (mA) (WA) ) (mA) 3EZ110D5 410 6.8 226 4000 O25 O48 83.6 26 3EZ120D5 120 6.3 300 4500 025 Os 912 22 3EZ130D5 430 6.8 37S 5000 0.25 Os 98.8 21 3EZ140D5 140 5.3 ATS 5000 O25 08 106.4 19 3EZ150D5 460 5.0 550 6000 0.25 Os 114.0 18 3EZ160D5 160 AT 825 8500 O25 O48 121.8 TE 3EZ170D5 470 44 650 7o00 0.25 Os 420.4 16 3EZ180D5 480 42 7o0 7000 025 Os 126.8 15 3EZ190D5 490 40 800 8000 025 Os 144.8 14 3EZ200D5 200 3.7 BFS 8000 0.25 Os 162.0 13 3EZ220D5 220 34 1600 3000 025 4 167.0 12 3EZ240D5 240 3.1 1700 9000 0.25 4 182.0 W 3EZ270D5 270 28 1800 3000 025 q 206.0 do 3EZ300D5 300 25 4300 3000 025 4 228.0 9 3EZ330D5 330 2.3 2200 9000 0.25 4 251.0 8 3EZ360D5 360 2.1 2700 9000 O25 4 274.0 8 3EZ400D5 400 1.9 3600 3000 025 4 304.0 t Note: (1) Suffix" 5 "indicates+-5 0% tolerance, suffix " 10" indicates +-10.0% tolerance (2) "EZ" will be omitted in marking on the diode