LESHAN RADIO COMPANY, LTD.
O2–1/2
VHF / UFH T ransistor
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CEO 15 Vdc
Collector–Base V oltage V CBO 30 Vdc
Emitter–Base V oltage V EBO 3.0 Vdc
Collector Current — Continuous I C50 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) PD225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient RθJA 55 6 °C/W
Total Device Dissipation PD300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ , Tstg –55 to +150 °C
DEVICE MARKING
MMBT9181LT1 = M3B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V (BR)CEO 15 — Vdc
(I C = 3.0 mAdc, I B = 0)
Collector–Base Breakdown V oltage V (BR)CBO 30 — Vdc
(I C = 1.0 µAdc, I E = 0)
Emitter–Base Breakdown V oltage V (BR)EBO 3.0 — Vdc
(I E = 10 µAdc, I C = 0)
Collector Cutoff Current I CBO — 50 nAdc
( V CB = 15 Vdc, I E = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2
EMITTER
3
COLLECTOR
1
BASE 1
3
2
MMBT918LT1
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
LESHAN RADIO COMPANY, LTD.
O2–2/2
MMBT918LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Ma x Unit
ON CHARACTERISTICS
DC Current Gain hFE 20 –– ––
(I C = 3.0 mAdc, V CE = 1.0 Vdc)
Collector–Emitter Saturation Voltage VCE(sat) –– 0.4 Vdc
(I C = 10 mAdc, I B = 1.0 mAdc)
Base–Emitter Saturation Voltage V BE(sat) — 1.0 Vdc
(I C = 10 mAdc, I B = 1.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f T600 — MHz
(I C = 4.0 mAdc, V CE = 10 Vdc, f = 100 MHz)
Output Capacitance C obo pF
(V CB = 0 Vdc, I E = 0, f = 1.0 MHz) — 3.0
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz) — 1.7
Input Capacitance C ibo — 2.0 pF
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
Noise Figure NF — 6.0 dB
(I C = 1.0 mAdc, V CE = 6.0 Vdc, R S = 50 Ω, f = 60 MHz) (Figure 1)
Power Output P out 30 — mW
(I C = 8.0 mAdc, V CB = 15 Vdc, f = 500 MHz)
Common–Emitter Amplifier Power Gain G pe 11 — dB
(I C = 6.0 mAdc, V CB = 12 Vdc, f = 200 MHz)
NF TEST CONDITIONS
I C = 1.0 mA
V CE = 6.0 VOLTS
R S = 50 Ω
f = 60 MHz
G pe TEST CONDITIONS
I C = 6.0 mA
V CE = 12 VOLTS
f = 200 MHz
Figure 1. NF, G pe Measurement Circuit 20–200
V BB V CC
EXTERNAL
100 k
0.018 µF
0.018 µF
3
1000 pF BYPASS
0.018 µF
0.018 µF
50 ΩRF
VM
C
G
