1
ESAD83-006R
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specied.)
Item Symbols Conditions Ratings Units
Repetitive peak reverse voltage V
RRM
-60 V
Average output current Io 50Hz Square wave duty =1/2
Tc = 119˚C 30 * A
Non-repetitive forward surge current** IFSM Sine wave, 10ms 1shot 120 A
Operating junction temperature
Tj
-150 ˚C
Storage temperature Tstg - -40 to +150 ˚C
Note* Out put current of center tap full wave connection.
Note** Rating per element
Electrical characteristics (at Ta=25˚C unless otherwise specied.)
Item Symbols Conditions Maximum Units
Forward voltage*** VFIF = 12.5 A 0.58 V
Reverse current*** IRVR =VRRM 20 mA
Thermal resistance Rth(j-c) Junction to case 1.2 ˚C/W
Note*** Rating per element
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Mechanical characteristics
Item Conditions Maximum Units
Mounting torque Recommended torque 0.4 to 0.6 N•m
Approximate mass
-
5.5 g
Schottky Barrier Diode
2
ESAD83-006R
3
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FUJI Diode
Outline Drawings [mm]
006
006
2
3
ESAD83-006R
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0 2 4 6 8 10 12 14 16
0
2
4
6
8
10
12
14
16
18
20
22
Square wave λ=180°
Sine wave λ=180°
Square wave λ=120°
Square wave λ=60°
WF Forward Power Dissipation (W)
Io Average Output Current (A)
Per 1element
DC
Forward Power Dissipation (max.)
0 5 10 15 20 25 30 35 40 45 50 55 60 65
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
α=180°
Reverse Power Dissipation (max.)
DC
PR Reverse Power Dissipation (W)
VR Reverse Voltage (V)
λ
360°
I0
α
360°
VR
0.01
0.1
1
10
100
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF Forward Voltage (V)
IF Forward Current (A)
Tj=25°C
Tj=100°C
Tj=125°C
Tj=150°C
Forward Characteristic (typ.)
0 10 20 30 40 50 60 70
1E-3
0.01
0.1
1
10
100
Tj=25°C
Tj=100°C
Tj=125°C
Tj=150°C
VR Reverse Voltage (V)
Reverse Characteristic (typ.)
IR Reverse Current (mA)
4
ESAD83-006R
5
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0 5 10 15 20 25 30 35 40 45
80
85
90
95
100
105
110
115
120
125
130
135
140
145
150
155
160
Square wave λ=60°
Square wave λ=120°
Square wave λ=180°
Sine wave λ=180°
Tc Case Temperature (°C)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
DC
Current Derating (Io-Tc) (max.)
Io Average Output Current (A) 10
100
1000
10000
Junction Capacitance Characteristic (typ.)
Cj Junction Capacitance (pF)
VR Reverse Voltage (V)
λ
360°
I0
VR=30V
11 0
10
100
1000
Surge Capability (max.)
IFSM Peak Half - Wave Current (A)
Number of Cycles at 50Hz
4
5
ESAD83-006R
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10-3 10-2 10-1 100101102
10-2
10-1
100
101
Transient Thermal Impedance (°C/W)
Rth j-c:1.2°C/W
(max.)
t Time (sec)
Transient Thermal Impedance
6
ESAD83-006R
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FUJI Diode
WARNING
1. This Catalog contains the product specications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specications.
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may arise from the use of the applications described herein.
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adequate safety measures to prevent the equipment from causing a physical injury, re, or other problem if any of the products
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