G*SiC(R) Technology MegaBright LEDs CxxxMB290-S0100 Features * Applications MegaBright LED Performance - 8.0mW min (460nm) Deep Blue - 7.5mW min (470nm) Blue - 6.0mW min (505nm) Traffic Green - 5.0mW min (527nm) Green * Outdoor LED Video Displays * Single Wire Bond Structure * Backlighting * Class II ESD Rating * Traffic Signals * Automotive Dashboard Lighting * White LEDs Description Cree's MBTM series of MegaBright LEDs combine highly efficient InGaN materials with Cree's proprietary GSiC(R) substrate to deliver superior price/performance for high intensity blue and green LEDs. These LED chips have a geometrically enhanced vertical chip structure to maximize light extraction efficiency, and require only a single wire bond connection. Sorted Die Kits provide die sheets conveniently sorted into wavelength and radiant flux bins. Cree's MB series chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000V ESD. These LEDs are useful in a broad range of applications such as outdoor full motion LED video signs, automotive lighting and white LEDs, yet can also be used in high volume applications such as LCD backlighting. Cree's MB series chips are compatible with most radial and SMT LED assembly processes. CxxxMB290-S0100 Chip Diagram Bottom View Topside View Die Cross Section G * SiC(R) LED Chip 300 x 300 m Mesa (junction) 240 x 240 m Gold Bond Pad 114 m Diameter CPR3AP Rev. F 2001-2003 Cree, Inc. All Rights Reserved. Anode (+) h = 250 m Backside Metallization Cathode (-) InGaN SiC Substrate G*SiC(R) Technology MegaBright LEDs CxxxMB290-S0100 Maximum Ratings at TA = 25C Notes 1&3 DC Forward Current Peak Forward Current (1/10 duty cycle @ 1kHz) LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Electrostatic Discharge Threshold (HBM) Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Note 2 CxxxMB290-S0100 30mA 100mA 125C 5V -40C to +100C -40C to +100C 1000 V Class 2 Typical Electrical/Optical Characteristics at TA = 25C, If = 20mA Note 3 Part Number Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), A] Peak Wavelength (p, nm) Full Width Half Max (D, nm) Optical Rise Time (, ns) Min Typ Max Max Typ Typ Typ C460MB290-S0100 3.0 3.5 3.8 10 458 26 30 C470 MB290-S0100 3.0 3.5 3.8 10 468 26 30 C505 MB290-S0100 3.0 3.8 4.0 10 502 30 30 C527 MB290-S0100 3.0 3.8 4.0 10 518 35 30 Mechanical Specifications Description P-N Junction Area (m) Top Area (m) Bottom Area (m) Chip Thickness (m) Au Bond Pad Diameter (m) Au Bond Pad Thickness (m) Back Contact Metal Width (m) CxxxMB290-S0100 Dimension 240 x 240 300 x 300 200 x 200 250 114 1.2 20 Tolerance 25 25 25 25 20 0.5 -5, +10 Notes: 1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325C (< 5 seconds). 2) Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD classification of Class II is based on sample testing according to MIL-STD 883E. 3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E. 4) Caution: To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80m. 5) Specifications are subject to change without notice. CPR3AP Rev. F 2001-2003 Cree, Inc. All Rights Reserved. G*SiC(R) Technology MegaBright LEDs CxxxMB290-S0100 Standard Bins for CxxxMB290-S0100: LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from only one bin. Sorted die kit (CxxxMB290-S0100) orders may be filled with any or all bins (CxxxMB290-010x) contained in the kit. Radiant Flux C460MB290-S0100 C460MB290-0105 C460MB290-0106 C460MB290-0103 C460MB290-0104 12.0mW 10.0mW C460MB290-0101 C460MB290-0102 8.0mW 455nm 460nm 465nm Dominant Wavelength Radiant Flux C470MB290-S0100 C470MB290-0107 C470MB290-0108 C470MB290-0109 C470MB290-0104 C470MB290-0105 C470MB290-0106 12.0mW 10.0mW C470MB290-0101 C470MB290-0102 7.5mW 470nm 472nm 465nm Dominant Wavelength 475nm Radiant Flux C505MB290-S0100 C505MB290-0103 C505MB290-0104 7.0mW C505MB290-0102 C505MB290-0101 6.0mW 510nm 500nm 505nm Dominant Wavelength Radiant Flux C527MB290-S0100 C527MB290-0104 C527MB290-0105 C527MB290-0106 6.0mW C527MB290-0101 C527MB290-0103 C527MB290-0102 5.0mW 520nm 525nm 530nm 535nm Dominant Wavelength CPR3AP Rev. F 2001-2003 Cree, Inc. All Rights Reserved. G*SiC(R) Technology MegaBright LEDs CxxxMB290-S0100 Characteristic Curves Forward Current vs Forward Voltage - All Products Wavelength Shift vs Forward Current - All Products 30 16.0 14.0 25 12.0 10.0 Shift (nm) If (mA) 20 15 10 8.0 6.0 4.0 2.0 5 527nm 0.0 505nm -2.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 470nm -4.0 5.0 0 Vf (V) 5 10 15 20 Relative Intensity vs Forward Current - All Products Relative Intensity vs Wavelength - All Products 140.0 100% 120.0 80% Relative Intensity (%) 100.0 % 80.0 60.0 40.0 20.0 60% 40% 20% 0.0 0 5 10 15 25 If (mA) 20 If (mA) CPR3AP Rev. F 2001-2003 Cree, Inc. All Rights Reserved. 25 30 0% 500 W avelength (nm) 30