MPSA63 / MMBTA63 / PZTA63 — PNP Darlington Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA63 / MMBTA63 / PZTA63 Rev. A1 1
August 2010
MPSA63 / MMBTA63 / PZTA63
PNP Darlington Transistor
Features
This device is designed for applications requiring extremely high current ga in at currents to 800 mA.
Sourced from Process 61.
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
* These ratings are limiting value s ab ove which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta = 25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.
** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2.
Symbol Parameter Value Units
VCES Collector-Emitter Voltage -30 V
VCBO Collector-Base V oltage -30 V
VEBO Emitter-Base Voltage -10 V
ICCollector Current - Continuous -1.2 A
TJ, Tstg Operating and Storage Junction Temperature Range - 55 to +150 °C
Symbol Parameter Max. Units
MPSA63 *MMBTA63 **PZTA63
PDTotal Device Dissip ation
Derate above 25°C625
5.0 350
2.8 1,000
8.0 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W
MPSA63 MMBTA63 PZTA63
EBC TO-92 SOT-23 SOT-223
Mark:2U
C
B
EE
BC
C
MPSA63 / MMBTA63 / PZTA63 — PNP Darlington Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA63 / MMBTA63 / PZTA63 Rev. A1 2
Electrical Characteristics Ta = 25°C unless otherwise noted
* Pulse Test: Pulse Width 300μs, Duty Cycle 2.0%
Typical Performance Characteristics
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
BV(BR)CES Collector-Emitter Breakdo wn Voltage IC = -100μA, IB = 0 -30 V
ICBO Collector-Cutoff Current VCB = -30V, IE = 0 -100 nA
IEBO Emitter-Cutoff Current VEB = -10V, IC = 0 -100 nA
On Characteristics *
hFE DC Current Gain IC = -10mA, VCE = -5.0V
IC = -100mA, VCE = -5.0V 5,000
10,000
VCE(sat) Collector-Emitter Saturation Voltage IC = -100mA, IB = -0.1 mA -1.5 V
VBE(on) Base-Emitter On Voltage IC = -100mA, VCE = -5.0V -2.0 V
Small Signal Characteristics
fTCurrent Gain - Bandwidth Product IC = -10mA, VCE = -5.0V,
f = 100MHz 125 MHz
Figure 1. Typical Pulsed Current Gain
vs Collector Current Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Typical Pu lsed C u rren t Gai n
vs Col lecto r C urren t
0.01 0.1 1
0
10
20
30
40
50
I - COLLECTOR CURRENT (A)
h - T YPICAL PULSED CURRENT GAIN ( K)
C
FE
125 °C
25 °C
- 40 ° C
V = 5V
CE
C o ll ector -Emitter Satur ati o n
Vo ltag e vs C o ll ector Cu r rent
0.001 0.01 0.1 1
0
0.4
0.8
1.2
1.6
I - COLLECTOR CURRENT (A)
V - COLLEC TOR EMITTER VOLTA GE (V)
C
CESAT
β
= 1000
25 °C
- 40 °C
125 °C
ββ
MPSA63 / MMBTA63 / PZTA63 — PNP Darlington Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA63 / MMBTA63 / PZTA63 Rev. A1 3
Typical Performance Characteristics (continued)
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature Figure 6. Input and Output Capacitance
vs Reverse Bias Voltage
Figure 7. Power Dissipation
vs Ambient Temperature
B ase-Emitter Satur ati o n
V olt a ge v s Colle c tor Current
0.001 0.01 0.1 1
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CU R REN T (A)
V - BASE EM ITTE R VOLTAGE (V)
C
BESAT
25 °C
- 4 0 °C
125 °C
β
= 1000
β
Base Emitter ON Voltage vs
Coll ect or Current
0.001 0.01 0.1 1
0
0.4
0.8
1.2
1.6
2
I - C OLLECTOR CU R REN T (A)
V - BAS E EMITTER ON VOLTAGE (V)
C
BE(ON)
V = 5V
CE
25 °C
- 4 0 °C
125 °C
C o ll ector -C u to ff Cu r rent
vs A mb ient Temp erat u re
25 50 75 100 125
0.01
0.1
1
10
100
T - A MBI ENT TEMPERATUR E ( C)
I - COLLECTOR CU RR ENT (nA)
A
CBO
°
V = 15V
CB
I n pu t a n d Output Cap a cita nc e
vs Reverse Bias Voltage
0.1 1 10 100
0
4
8
12
16
RE VER SE VO L TA GE (V)
CA PA CI TANCE ( pF)
C
f = 1.0 M Hz
ib
C
ob
Powe r Dis sipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPER ATURE ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223
TO-92
SOT-23
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