©2000 Fairchild Semiconductor International Rev. A, February 2000
BDX34/A/B/C
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BDX3 4
: BDX34A
: BDX34B
: BDX34C
- 45
- 60
- 80
- 100
V
V
V
V
VCEO Collector-Emitter Voltage: BDX3 4
: BDX34A
: BDX34B
: BDX34C
- 45
- 60
- 80
- 100
V
V
V
V
IC Collector Current (DC) - 10 A
ICP *Collector Current (Pulse) - 15 A
IB Base Current - 0.25 A
PC Collector Dissipation (TC=25°C) 70 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
BDX34/A/B/C
Power Linear and Switching Applications
• High Gain General Purpose
• Power Darlington TR
• Complement to BDX33/33A/33B/33C respectively
1.Base 2.Collector 3.Emitter
1TO-220
©2000 Fairchild Semiconductor International Rev. A, February 2000
BDX34/A/B/C
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
Symbol Parame ter Test Condition Min. Typ. Max. U nits
VCEO(sus) * Collector-Emitter Sustaining Vo ltage
: BDX3 4
: BDX34A
: BDX34B
: BDX34C
IC = -100mA , IB = 0
- 45
- 60
- 80
- 100
V
V
V
V
VCER(sus) * Collector-Emitter Sustaining Vo ltage
: BDX3 4
: BDX34A
: BDX34B
: BDX34C
IC = -1 00mA, IB = 0
RBE = 100Ω - 45
- 60
- 80
- 100
V
V
V
V
VCEV(sus) * Collector-Emitter Sustaining Voltage
: BDX3 4
: BDX34A
: BDX34B
: BDX34C
IC = - 100mA, IB = 0
VBE = - 1.5V - 45
- 60
- 80
- 100
V
V
V
V
ICBO Collector Cut-off Current: BDX3 4
: BDX34A
: BDX34B
: BDX34C
VCB = - 45V, IE = 0
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VCB = - 100V, IE = 0
- 0.2
- 0.2
- 0.2
- 0.2
mA
mA
mA
mA
ICEO Collector Cut-off Current: BDX34
: BDX34A
: BDX34B
: BDX34C
VCE = - 22V, IB = 0
VCE = - 30V, IB = 0
VCE = - 40V, IB =0
VCE = - 50V, IB = 0
- 0.5
- 0.5
- 0.5
- 0.5
mA
mA
mA
mA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 5 mA
hFE * DC Current Gain : BDX34/34A
: BDX34B/34C
VCE = - 3V, IC = - 4A
VCE = - 3V, IC = - 3A 750
750
VCE(sat) * Collector-Emitter Saturation Voltage
: BDX34/34A
: BDX34B/34C IC = - 4A, IB = - 8mA
IC = - 3A, IB = - 6mA
- 2.5
- 2.5 V
V
VBE(on) * Base-Emitter ON Voltage
: BDX34/34A
: BDX34B/34C VCE = - 3V, IC = - 4A
VCE = - 3V, IC = - 3A - 2.5
- 2.5 V
V
VF* Parallel Diode Forward Voltage IF = - 8A - 4 V
©2000 Fairchild Semiconductor International
BDX34/A/B/C
Rev. A, February 2000
Typical Characteristics
Figure 1. DC Curren t Gain Figure 2 . C o llector -Emitter Sa turation Volta ge
Figure 3. Base-Emitter On Voltage Figure 4. Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
-0.1 -1 -10
100
1k
10k
100k
VCE = -3V
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
-0.1 -1 -10
-0.1
-1
-10
IC= 250I B
VCE(sat) [V], SATURATION VOLTAGE
IC [A], COLLECTOR CURRENT
-0 -1 -2 -3 -4
-0.0
-2.5
-5.0
-7.5
-10.0
VCE= -3V
IC[A], COL LEC TOR CURR ENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100
10
100
1000
f = 1MHz
IE = 0
Cob [pF], CAPACTIANCE
VCB [V], COLLECTOR-BASE VOLTAGE
-1 -10 -100 -1000
-0.1
-1
-10
-100
BDX34C
BDX34B
BDX34A
BDX34
DC
10 us
100 us1 ms
5 ms
IC MAX. (Pulsed)
IC MAX. (Continuous)
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
10
20
30
40
50
60
70
80
PD [W], POWER DISSIPATION
Tc [oC], CASE TEMPERATURE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BDX34/A/B/C
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
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Design This datasheet contains the design specifications for
product development. Specifications may change in
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