Features 80A, 600V Ultrafast Rectifier * High Speed Switching ( trr=74ns(Typ.) @ IF=80A ) The RURG8060-F085 is an ultrafast diode with soft recovery characteristics (trr < 90ns). It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as a freewheeling/ clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. * Low Forward Voltage( VF=1.34V(Typ.) @ IF=80A ) * Avalanche Energy Rated * AEC-Q101 Qaulified Applications * Automotive DCDC converter * Automotive On Board Charger * Switching Power Supply * Power Switching Circuits Pin Assignments 1. Cathode 1 1. Cathode TO-247-2L 2. Anode Absolute Maximum Ratings 2 2. Anode TC = 25C unless otherwise noted Symbol Parameter Ratings Units VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current 80 A @ TC = 25C IFSM Non-repetitive Peak Surge Current (Halfwave 1 Phase 50Hz) 240 A EAVL Avalanche Energy (1.6A, 40mH) 50 mJ TJ, TSTG Operating Junction and Storage Temperature - 55 to +175 C Max Units 0.85 C/W 50 C/W Thermal Characteristics T C = 25C unless otherwise noted Symbol Parameter RJC Maximum Thermal Resistance, Junction to Case RJA Maximum Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Device Marking Device Package Tube Quantity RURG8060 RURG8060-F085 TO-247 - 30 (c)2013 Semiconductor Components Industries, LLC. August-2017, Rev. 3 Publication Order Number: RURG8060-F085 /D RURG8060-F085 80A, 600V Ultrafast Rectifier RURG8060-F085 80A, 600V Ultrafast Rectifier C Symbol IR = 25C unless otherwise noted Parameter Conditions Instantaneous Reverse Current VR = 600V Min. Typ. Max Units TC = 25 C - - 250 uA TC = 175 C - - 2 mA VFM1 Instantaneous Forward Voltage IF = 80A TC = 25 C TC = 175 C - 1.34 1.17 1.6 1.4 V V trr2 Reverse Recovery Time IF =1A, di/dt = 100A/s, VCC= 390V TC = 25 C - 46 75 ns IF =80A, di/dt = 100A/s, VCC= 390V TC = 25 C TC = 175 C - 74 290 90 ns ns IF =80A, di/dt = 100A/s, VCC= 390V TC = 25 C - 38 36 130 - ns ns nC 50 - - mJ ta tb Qrr Reverse Recovery Time EAVL Avalanche Energy Reverse Recovery Charge IAV=1.6A, L=40mH Notes: 1. Pulse : Test Pulse width = 300s, Duty Cycle = 2% 2. Guaranteed by design Test Circuit and Waveforms www.onsemi.com 2 RURG8060-F085 80A, 600V Ultrafast Rectifier Electrical Characteristics T Figure 2. Typical Reverse Current vs. Reverse Voltage Figure 1. Typical Forward Voltage Drop vs. Forward Current 1000 400 Reverse Current , IR [A] o Forward Current, IF [A] TC = 175 C 10 o TC = 125 C 1 TC = 25oC 0.1 0.1 0.5 1.0 1.5 Forward Voltage, V F [V] 1 0.1 0.01 TC = 25oC 0 100 200 300 400 Reverse Voltage, VR [V] 500 600 300 IF = 80A Reverse Recovery Time, trr [ns] Capacitances , Cj [pF] o TC = 125 C Figure 4. Typical Reverse Recovery Time vs. di/dt Typical Capacitance at 10V = 247pF 800 600 400 200 1 10 Reverse Voltage, V R [V] 250 o TC = 175 C 200 o T C = 125 C 150 T C = 25oC 100 50 0 100 100 200 300 di/dt [A/s] 400 500 Figure 6. Forward Current Derating Curve Figure 5. Typical Reverse Recovery Current vs. di/dt 100 o TC = 175 C 40 30 o TC = 125 C 20 o TC = 25 C 10 I F = 80A 200 300 di/dt [A/s] 400 Average Forward Current, IF(AV) [A] 50 Reverse Recovery Current, Irr [A] 10 1E-4 2.0 1000 0 100 TC = 175 C 1E-3 Figure 3.Typical Junction Capacitance 0.1 o 100 100 80 60 40 20 0 25 500 www.onsemi.com 3 50 75 100 125 150 o Case temperature, TC [ C] 175 RURG8060-F085 80A, 600V Ultrafast Rectifier Typical Performance Characteristics RURG8060-F085 80A, 600V Ultrafast Rectifier Typical Performance Characteristics (Continued) Figure 7. Reverse Recovery Charge Reverse Recovery Charge, Q rr [nC] 5000 I F = 80A 4000 o TC = 175 C 3000 o TC = 125 C 2000 1000 o TC = 25 C 0 100 200 300 di/dt [A/s] 400 500 Figure 8. Transient Thermal Response Curve ZthJC(t), Thermal Response 1 D=0.5 PDM 0.2 0.1 t1 0.1 t2 0.05 0.02 * Notes : 1. ZthJC(t) = 0.85 0C/W Typ. single pulse 0.01 2. Duty Factor, D=t1/t2 3. TJM - TC = P DM * ZthJC(t) 0.001 -5 10 10 -4 -3 -2 -1 0 10 10 10 10 t1, Square Wave Pulse Duration [sec] www.onsemi.com 4 10 1 10 2 RURG8060-F085 80A, 600V Ultrafast Rectifier Mechanical Dimensions TO-247-2L Dimensions in Millimeters www.onsemi.com 5 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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