3
Absolute Maximum Ratings at TA = 25°C
Peak Forward Current[1] ...................................................................................................................... 300 mA
Average Forward Current....................................................................................................................... 20 mA
DC Current[2] ......................................................................................................................................... 30 mA
Power Dissipation ................................................................................................................................. 87 mW
Reverse Voltage (IR = 100 µA).................................................................................................................... 5 V
Transient Forward Current (10 µs Pulse)[3] ......................................................................................... 500 mA
LED Junction Temperature ..................................................................................................................... 110°C
Operating Temperature Range ................................................................................................... -20 to +100°C
Storage Temperature Range....................................................................................................... -55 to +100°C
Lead Soldering Temperature [1.6 mm (0.063 in.) from body]........................................... 260°C for 5 seconds
Notes:
1. Maximum IPEAK at f = 1 kHz, DF = 6.7%.
2. Derate linearly as shown in Figure 4.
3. The transient peak current is the maximum non-recurring peak current the device can withstand without damaging the LED die and
wire bonds. It is not recommended that the device be operated at peak currents beyond the Absolute Maximum Peak Forward Current.
Electrical/Optical Characteristics at TA = 25°C
Symbol Description Min. Typ. Max. Unit Test Condition
VFForward Voltage 1.6 1.8 V IF = 1 mA
VRReverse Breakdown Voltage 5.0 15.0 V IR = 100 µA
λpPeak Wavelength 645 nm Measurement at Peak
λdDominant Wavelength 637 nm Note 1
∆λ1/2Spectral Line Halfwidth 20 nm
τSSpeed of Response 30 ns Exponential Time
Constant, e-t/TS
C Capacitance 30 pF VF = 0, f = 1 MHz
RθJ-PIN Thermal Resistance 260[3] °C/W Junction to Cathode Lead
210[4]
290[5]
ηVLuminous Efficacy 80 Im/W Note 2
Notes:
1. The dominant wavelength, λd, is derived from the CIE chromaticity diagram and represents the color of the device.
2. The radiant intensity, Ie, in watts per steradian, may be found from the equation Ie = lV/ηV, where IV is the luminous intensity in
candelas and ηV is luminous efficacy in lumens/watt.
3. HLMP-D150.
4. HLMP-D155.
5. HLMP-K150/-K155.