2013. 7. 08 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC945
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
·Excellent hFE Linearity.
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)
·Low Noise : NF=1dB(Typ.). at f=1kHz
·Complementary to KTA733.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC150 mA
Collector Power Dissipation *PC
625
mW
400
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=100μA, IE=0 60 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 50 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=100μA, IC=0 5 - - V
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 μA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 μA
DC Current Gain hFE (Note) VCE=6V, IC=2mA 90 - 600
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - - 1.0 V
Transition Frequency fTVCE=10V, IC=10mA 80 300 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF
Noise Figure NF VCE=6V, IC=0.1mA Rg=10kΩ, f=1kHz - 1.0 10 dB
Note : hFE Classification R:90～180, Q:135～270, P:200～400, K:300～600
*Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW
2013. 7. 08 2/2
KTC945
Revision No : 3
