SEMICONDUCTOR KTC945 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES *Excellent hFE Linearity. : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *Low Noise : NF=1dB(Typ.). at f=1kHz *Complementary to KTA733. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V IC 150 mA Collector Current 625 *PC Collector Power Dissipation mW 400 Junction Temperature Storage Temperature Range Tj 150 Tstg -55150 *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=100A, IE=0 60 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 50 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=100A, IC=0 5 - - V Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A 90 - 600 hFE (Note) DC Current Gain VCE=6V, IC=2mA Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - - 1.0 V fT VCE=10V, IC=10mA 80 300 - MHz Transition Frequency Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF Noise Figure NF VCE=6V, IC=0.1mA Rg=10k, f=1kHz - 1.0 10 dB Note : hFE Classification 2013. 7. 08 R:90180, Q:135270, Revision No : 3 P:200400, K:300600 1/2 KTC945 2013. 7. 08 Revision No : 3 2/2