SIZE
A
5962-91545
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
F
SHEET
11
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics - Continued.
1/ All voltages are referenced to ground.
2/ I/O terminal leakage is the worst case of IIX or IOZ.
3/ Only one output shorted at a time.
4/ Tested initially and after any design or process changes that affect that parameter, and therefore
shall be guaranteed to the limits specified in table I.
5/ All pins not being tested are to be open.
6/ Test applies only to register outputs.
7/ Buried registers include all 24 Q2 registers and any of the 24 Q1 registers in macrocells configured as combinational.
8/ Values guaranteed by design and are not tested.
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-
PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for
device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be
performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D,
and E inspections (see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a. Tests shall be as specified in table IIA herein.
b. Subgroups 5 and 6 of table I of method 5005 of MIL-STD-883 shall be omitted.
c. For device class M, subgroups 7, 8A and 8B tests shall be sufficient to verifying the functionality of the device.
These tests form a part of the vendors test tape and shall be maintained and available upon request. For device
classes Q and V, subgroups 7 and 8 shall include verifying the functionality of the device.
d. O/V (Latch up) tests shall be measured only for the initial qualification and after any process or design changes
which may affect the performance of the device. For device class M, procedures and circuits shall be maintained
under document revision level control by the manufacturer and shall be made available to the preparing or
acquiring activity upon request. For device classes Q and V, the procedures and circuit shall be under the control
of the device manufacturer’s TRB in accordance with MIL-PRF-38535 and shall be made available to the
preparing or acquiring activity upon request. Testing shall be on all pins, on five devices with zero failures. Latch-
up test shall be considered destructive. Information contained in JEDEC Standard EIA/JESD78 may be used for
reference.
e. Subgroup 4 (CI and CO measurements) shall be measured only for initial qualification and after any process or
design changes which may affect input or output capacitance. Capacitance shall be measured between the
designated terminal and GND at a frequency of 1 MHz. Sample size is 5 devices with no failures, and all input
and output terminals tested.
f. All devices selected for testing shall be programmed with a checkerboard pattern or equivalent. After completion
of all testing, the devices shall be erased and verified (except devices submitted for groups B, C, and D testing).
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA
herein.
4.4.2.1 Additional criteria for device class M.
a. Steady-state life test conditions, method 1005 of MIL-STD-883:
(1) Test condition D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified
in method 1005 of MIL-STD-883.
(2) TA = +125°C, minimum.
(3) Test duration: 1,000 hours, except as specified in method 1005 of MIL-STD-883.