108 93 0 .2 5 14 11 14 11 14 3-M6 (C1) 3 3 2 62 11 13 20 1 5(E1) 4(G1) 5 4 25 9 16 9 24 16 30 +1.0 - 0.5 8 16 25 48 0 .2 5 (E2) 2 4-O 6.5 6 (C2E1) 1 7 23 LABEL Dimension:mm ollector-mitter oltage ate-mitter oltage ollector ower issipation unction emperature ange torage emperature ange ollector urrent (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal , (kgfcm) ollector-mitter ut-ff urrent ate-mitter eakage urrent . . . = 600V,= 0V . = 20V,= 0V . ollector-mitter aturation oltage = 400A,= 15V . . ate-mitter hreshold oltage = 5V,= 400mA . . nput apacitance = 10V,= 0V,= 1MH 20,000 witching ime = = = = . . . . . . . . ise urn-on all urn-off ime ime ime ime orward urrent 300V 0.75 3.0 15V eak orward oltage everse ecovery ime . . . = 400A,= 0V . . = 400A,= -10V i/t= 800A/s . . . . . . . hermal mpedance iode th(j-c) Junction to Case Tc 00 http://store.iiic.cc/ Fig.1- Output Characteristics (Typical) Fig.2- Output Characteristics (Typical) T C=25C 800 VGE=20V 700 VGE=20V 12V 700 15V 11V 500 400 10V 300 9V 200 12V 15V 600 Collector Current I C (A) 600 Collector Current I C (A) T C=125C 800 11V 500 10V 400 300 9V 200 8V 100 0 100 8V 0 1 2 3 4 0 5 0 1 Collector to Emitter Voltage VCE (V) 800A 400A 12 10 8 6 4 2 0 0 4 8 12 16 IC=200A 14 400A 10 8 6 4 2 0 20 0 4 8 300 12 250 10 VCE =300V 8 200V 6 100V 4 30000 Cies 10000 Coes 3000 Cres 1000 2 50 0 VGE=0V f=1MHZ T C=25C 100000 Gate to Emitter Voltage VGE (V) Collector to Emitter Voltage V CE (V) 14 100 20 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) Capacitance C (pF) RL =0.75( TC=25C 150 16 300000 16 200 12 Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) 350 800A 12 Gate to Emitter Voltage VGE (V) 400 5 T C=125C 16 Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) IC=200A 4 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) T C=25C 14 3 Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 2 0 200 400 600 800 1000 1200 1400 0 1600 300 0.1 Total Gate Charge Qg (nC) 0.2 0.5 1 2 5 10 20 50 100 200 Collector to Emitter Voltage VCE (V) 00 http://store.iiic.cc/ Fig.7- Collector Current vs. Switching Time (Typical) 1 0.6 tf 0.4 2 tON 0.2 1 0.5 toff 0.2 tr(V CE) ton tf 0.1 0.05 tr(VCE) 0 VCC=300V IC=400A VGE=15V T C=25C Resistive Load 5 Switching Time t (s) Switching Time t (s) 10 VCC=300V RG=3.0 ( VGE=15V T C=25C Resistive Load tOFF 0.8 Fig.8- Series Gate Impedance vs. Switching Time (Typical) 0 100 200 300 400 500 0.02 600 1 3 Collector Current IC (A) Fig.10- Series Gate Impedance vs. Switching Time 10 VCC=300V RG=3.0( VGE=15V T C=125C Inductive Load tOFF tON tf 0.1 tr(Ic) 0.01 VCC=300V IC=400A VGE=15V T C=125C Inductive Load 5 2 Switching Time t (s) Switching Time t (s) 1 1 0.5 toff 0.2 ton 0.1 tf 0.05 0.001 0 100 200 300 400 500 0.02 600 tr(IC ) 1 3 Collector Current IC (A) 30 Fig.12- Series Gate Impedance vs. Switching Loss 1000 VCC=300V RG=3.0 ( VGE=15V T C=125C Inductive Load 30 EOFF EON 20 ERR 10 0 100 200 300 400 500 600 Switching Loss ESW (mJ/Pulse) 40 Switching Loss ESW (mJ/Pulse) 10 Series Gate Impedance RG (( ) Fig.11- Collector Current vs. Switching Loss 0 30 Series Gate Impedance RG (( ) Fig.9- Collector Current vs. Switching Time 10 10 VCC=300V IC=400A VGE=15V T C=125C Inductive Load 300 EON 100 EOFF 30 ERR 10 3 1 1 3 10 30 Series Gate Impedance RG (( ) Collector Current IC (A) 00 http://store.iiic.cc/ Fig.14- Reverse Recovery Characteristics (Typical) Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) T C=25C 1000 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 400 200 0 1 2 3 500 trr 200 100 50 20 10 4 IRrM 0 400 800 Forward Voltage VF (V) 1200 1600 2000 2400 -di/dt (A/s) Fig.15- Reverse Bias Safe Operating Area 2000 RG=3.0( , VGE=15V, T C<125C 1000 500 200 Collector Current I C (A) 0 IF=400A T C=25C T C=125C T C=125C 600 100 50 20 10 5 2 1 0.5 0.2 0.1 0 200 400 600 800 Collector to Emitter Voltage V CE (V) Fig.16- Transient Thermal Impedance 1 Transient Thermal Impedance Rth (J-C) (C/W) Forward Current I F (A) 800 FRD 3x10 -1 IGBT 1x10 -1 3x10 -2 1x10 -2 3x10 -3 T C=25C 1x10 -3 1 Shot Pulse 3x10 -4 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 1 Time t (s) 00 http://store.iiic.cc/