1N4150 VISHAY Vishay Semiconductors Fast Switching Diode Features * Silicon Epitaxial Planar Diode * Low forward voltage drop * High forward current capability Applications High speed switch and general purpose use in computer and industrial applications 94 9367 Mechanical Data Case: DO-35 Glass Case Weight: approx. 300 mg Packaging Codes/Options: D3/10 K per 13" reel (8 mm tape), 30 K/box D4/3 K per 7" reel (8 mm tape), 30 K/box Parts Table Part Type differentiation 1N4150 Single Diodes Ordering code Remarks Package 1N4150-TAP / 1N4150-TR Ammopack / Tape and Reel DO35 Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Sub type Repetitive peak reverse voltage Symbol Value Unit VRRM 50 V VR 50 V IFSM 4 A Reverse voltage Peak forward surge current tp = 1 s Average peak forward current IFRM 600 mA Forward current VR = 0 IF 300 mA Average forward current VR = 0 IFAv 150 mA Power dissipation l = 4 mm, TL = 45 C PV 440 mW l = 4 mm, TL 25 C PV 500 mW Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Junction ambient Junction temperature Storage temperature range Document Number 85522 Rev. 5, 21-Nov-02 Test condition l = 4 mm, TL = constant Symbol Value Unit RthJA 350 K/W Tj 175 C Tstg - 65 to + 175 C www.vishay.com 1 1N4150 VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Symbol Min Max Unit IF = 1 mA Test condition VF 0.54 0.62 V IF = 10 mA VF 0.66 0.74 V IF = 50 mA VF 0.76 0.86 V IF = 100 mA VF 0.82 0.92 V IF = 200 mA VF 0.87 1.0 V VR = 50 V IR 100 nA VR = 50 V, Tj = 150 C IR 100 A Diode capacitance VR = 0, f = 1 MHz, VHF = 50 mV CD 2.5 pF Reverse recovery time IF = IR = (10 to 100) mA, iR = 0.1 x IR, RL = 100 trr 4 ns Forward voltage Reverse current Sub type Typ. Typical Characteristics (Tamb = 25C unless otherwise specified) 100 IR - Reverse Current ( mA ) Scattering Limit 10 1 0.1 VR=50V 0.01 0 40 80 120 160 200 Tj - Junction Temperature ( C ) 94 9100 Figure 1. Reverse Current vs. Junction Temperature IF - Forward Current ( mA ) 1000 100 Scattering Limit 10 1 Tj=25C 0.1 0 0.4 0.8 1.2 1.6 2.0 VF - Forward Voltage ( V ) 94 9162 Figure 2. Forward Current vs. Forward Voltage www.vishay.com 2 Document Number 85522 Rev. 5, 21-Nov-02 1N4150 VISHAY Vishay Semiconductors Package Dimensions in mm Cathode Identification 0.55 max. technical drawings according to DIN specifications 1.7 max. 16924 Document Number 85522 Rev. 5, 21-Nov-02 26 min. 3.9 max. 26 min. www.vishay.com 3 1N4150 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85522 Rev. 5, 21-Nov-02