VISHAY
1N4150
Document Number 85522
Rev. 5, 21-Nov-02
Vishay Semiconductors
www.vishay.com
1
94 9367
Fast Switching Diode
Features
• Silicon Epitaxial Planar Diode
• Low forward voltage drop
• High forward current capability
Applications
High speed switch and general purpose use in com-
puter and industrial applications
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 300 mg
Packaging Codes/Options:
D3/10 K per 13" reel (8 mm tape), 30 K/box
D4/3 K per 7" reel (8 mm tape), 30 K/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Part Type differentiation Ordering code Remarks Package
1N4150 Single Diodes 1N4150-TAP / 1N4150-TR Ammopack / Tape and
Reel
DO35
Parameter Tes t c ond ition Sub type Symbol Value Unit
Repetitive peak reverse voltage VRRM 50 V
Reverse voltage VR50 V
Peak forward surge current tp = 1 µs IFSM 4 A
Average peak forward current IFRM 600 mA
Forward current VR = 0 IF300 mA
Average forward current VR = 0 IFAv 150 mA
Power dissipation l = 4 mm, TL = 45 °C PV440 mW
l = 4 mm, TL ≤ 25 °C PV500 mW
Parameter Test condition Symbol Value Unit
Junction ambient l = 4 mm, TL = constant RthJA 350 K/W
Junction temperature Tj175 °C
Storage temperature range Tstg - 65 to + 175 °C
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Document Number 85522
Rev. 5, 21-Nov-02
VISHAY
1N4150
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25°C unless otherwise specified)
Parameter Te s t c o n d i t i o n Sub type Symbol Min Typ. Max Unit
Forward voltage IF = 1 mA VF0.54 0.62 V
IF = 10 mA VF0.66 0.74 V
IF = 50 mA VF0.76 0.86 V
IF = 100 mA VF0.82 0.92 V
IF = 200 mA VF0.87 1.0 V
Reverse current VR = 50 V IR100 nA
VR = 50 V, Tj = 150 °C IR100 µA
Diode capacitance VR = 0, f = 1 MHz, VHF = 50 mV CD2.5 pF
Reverse recovery time IF = IR = (10 to 100) mA, iR = 0.1 x
IR, RL = 100 Ω
trr 4ns
Figure 1. Reverse Current vs. Junction Temperature
Figure 2. Forward Current vs. Forward Voltage
m
0 40 80 120 160
0.01
0.1
1
10
100
I – Reverse Current ( A )
R
T
j
– Junction Temperature ( °C )
200
94 9100
Scattering Limit
V
R
=50V
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I – Forward Current ( mA )
F
V
F
– Forward Voltage ( V )
2.0
94 9162
Scattering Limit
T
j
=25°C
VISHAY
1N4150
Document Number 85522
Rev. 5, 21-Nov-02
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm
Cathode Identification
1.7 max.
0.55 max.
3.9 max.26 min.
technical drawings
according to DIN
specifications
16924
26 min.
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4
Document Number 85522
Rev. 5, 21-Nov-02
VISHAY
1N4150
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further
notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
