DIM300WHS12-A000 DIM300WHS12-A000 Half Bridge IGBT Module Replaces February 2004 version, issue PDS5691-2.0 FEATURES 10s Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate DS5691-3.0 June 2004 KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 300A 600A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS Inverters Motor Controllers 7(E2) 6(G2) The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM300WHS12-A000 is a half bridge switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. 1(E1C2) 2(E2) 3(C1) 4(G1) 5(E1) Fig. 1 Half bridge circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM300WHS12-A000 Note: When ordering, please use the whole part number. Outline type code: W (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/8 DIM300WHS12-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 1200 V 20 V Continuous collector current Tcase = 80C 300 A IC(PK) Peak collector current 1ms, Tcase = 115C 600 A Pmax Max. transistor power dissipation Tcase = 25C, Tj = 150C 1866 W Diode I2t value VR = 0, tp = 10ms, Tvj = 125C 14 kA2s Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2500 V QPD Partial discharge - per module IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS 10 PC IC I2t THERMAL AND MECHANICAL RATINGS Internal insulation: Al2O3 Baseplate material: Cu Creepage distance: 24mm Test Conditions Parameter Symbol Rth(j-c) Clearance: 13mm CTI (Critical Tracking Index): 175 Thermal resistance - transistor (per arm) Continuous dissipation - Min. Typ. Max. Units - - 67 C/kW - - 150 C/kW - - 15 C/kW junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Tj Tstg - Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 C Diode - - 125 C -40 - 125 C 3 - 5 Nm 2.5 - 5 Nm - Storage temperature range Screw torque Mounting - M6 Electrical connections - M6 2/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM300WHS12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 0.5 mA VGE = 0V, VCE = VCES, Tcase = 125C - - 6 mA Gate leakage current VGE = 20V, VCE = 0V - - 2 A VGE(TH) Gate threshold voltage IC = 15mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 300A - 2.2 2.7 V VGE = 15V, IC = 300A, , Tcase = 125C - 2.6 3.1 V Parameter Symbol ICES IGES Collector cut-off current Test Conditions IF Diode forward current DC - - 300 A IFM Diode maximum forward current tp = 1ms - - 600 A VF Diode forward voltage IF = 300A - 2.2 2.5 V IF = 300A, Tcase = 125C - 2.3 2.6 V VCE = 25V, VGE = 0V, f = 1MHz - 50 - nF Cies Input capacitance LM Module inductance - per arm - - 20 - nH Internal transistor resistance - per arm - - 0.23 - m RINT SCData Short circuit. ISC Tj = 125C, VCC = 900V, I1 - 2000 - A tp 10s, VCE(max) = VCES - L*. di/dt I2 - 1700 - A IEC 60747-9 Note: Measured at the power busbars and not the auxiliary terminals L* is the circuit inductance + LM Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/8 DIM300WHS12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise Min. Typ. Max. Units IC = 300A - 710 - ns Fall time VGE = 15V - 70 - ns EOFF Turn-off energy loss VCE = 600V - 35 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7 - 190 - ns L ~ 100nH - 130 - ns Parameter Symbol td(off) tf tr Turn-off delay time Rise time Test Conditions EON Turn-on energy loss - 30 - mJ Qg Gate charge - 3 - C Qrr Diode reverse recovery charge IF = 300A, VR = 600V, - 40 - C Irr Diode reverse current dIF/dt = 3500A/s - 225 - A - 13 - mJ Test Conditions Min. Typ. Max. Units IC = 300A - 890 - ns Fall time VGE = 15V - 100 - ns EOFF Turn-off energy loss VCE = 600V - 45 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7 - 440 - ns L ~ 100nH - 160 - ns - 45 - mJ IF = 300A, VR = 600V, - 65 - C dIF/dt = 3000A/s - 240 - A - 24 - mJ EREC Diode reverse recovery energy Tcase = 125C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC 4/8 Diode reverse recovery energy Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM300WHS12-A000 TYPICAL CHARACTERISTICS 600 600 Common emitter Tcase = 25C Vce is measured at power busbars and not the auxiliary terminals 500 Collector current, IC - (A) Collector current, IC - (A) 500 Common emitter Tcase = 125C 400 300 200 100 0 0 1.0 1.5 2.0 2.5 3.0 Collector-emitter voltage, Vce - (V) 3.5 400 300 200 100 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 0.5 Vce is measured at power busbars and not the auxiliary terminals 0 0 4.0 Fig. 3 Typical output characteristics VGE = 10V VGE = 12V VGE = 15V VGE = 20V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector-emitter voltage, Vce - (V) 4.5 5.0 Fig. 4 Typical output characteristics 75 45 Tc = 125C, 70 Vcc = 600V, IC = 300A 65 Tc = 125C, Vcc = 600V, 40 Rg = 4.7 Ohms 60 35 Switching energy, Esw - (mJ) Switching energy, Esw - (mJ) 55 30 25 20 15 50 45 40 35 30 25 20 10 15 0 0 10 Eon Eoff Erec 5 100 200 Eon Eoff Erec 5 300 Collector current, IC - (A) Fig. 5 Typical switching energy vs collector current 0 4.2 5.6 7.0 8.4 Gate resistance, Rg - (Ohms) Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9.8 5/8 DIM300WHS12-A000 600 900 Tj = 25C Tj = 125C VF is measured at power busbars and not the auxiliary terminals 500 800 400 Collector current, Ic - (A) Forward current, IF - (A) 700 600 500 300 400 200 300 200 T case = 125C Vge =15V 100 Rg = 4.7 Ohms 100 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0 4.0 Module IC Chip IC Forward voltage, VF - (V) Fig. 7 Diode typical forward characteristics 400 600 800 1000 1200 Collector-emitter voltage, Vce - (V) 1000 Tcase =125C Transient thermal impedance, Zth (j-c) - (C/kW ) 375 300 Diode 100 225 150 75 Transistor 10 IGBT Diode 0 0 200 400 600 800 1000 1200 Reverse voltage, VR - (V) Fig. 9 Diode reverse bias safe operating area 6/8 1400 Fig. 8 Reverse bias safe operating area 450 Reverse recovery current, Irr - (A) 200 1400 1 0.001 Ri (C/KW) i (ms) Ri (C/KW) i (ms) 0.01 1 0.787 0.11 1.68 0.10 2 4.35 3.14 9.48 3.21 0.1 Pulse width, tp - (s) 3 16.44 45.60 27.84 38.58 1 4 11.07 143.02 33.77 113.97 10 Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM300WHS12-A000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 7(E2) 6(G2) 1(E1C2) 2(E2) 3(C1) 4(G1) 5(E1) Nominal weight: 420g Module outline type code: W Fig. 11 Package details Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 7/8 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97. France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59. Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97 Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. 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