SPEC NO: DSAF1200
REV NO: V.1 DATE: MAR/16/2005 PAGE:
1
OF
4
APPROVED: J. Lu
CHECKED: Allen Liu DRAWN: H.Q.YUAN ERP:12030
01175
Packag e Dimen sion
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is
±0
.2(0. 0 08") unless other wis e note d.
3. Specifications are subject to change without notice.
3.8x2.0mm DOME LENS SMD CHIP LED LAMP
Features
z
3.8mmx2.0mm SMT LED,3.2mm THICKNESS.
z
LOW POWER CON SUMPTION.
z
IDEAL FOR BACKLIGHT AND INDICATOR.
z
VARIOUS COLORS AND LENS TYPES AVAILABLE.
z
PACKAGE : 500PCS / REEL
.
z
RoHS COMPLI ANT.
APED3820SEC
-
F01 SUPER BRIGHT ORANGE
Description
The Super Bright
Orange devices
is
made
with
DH
InGaAlP (on GaAs substrat e
¼
light emi tting diode
chip
.
SPEC NO: DSAF1200
REV NO: V.1 DATE: M AR/16/2005 PAGE:
2
OF
4
APPROVED: J. Lu
CHECKED: Allen Liu DRAWN: H.Q.YUAN ERP:12030
01175
Selectio n Guid
e
Note:
1.
θ
1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value.
Electrical / Optical Characteristics at T
A
=25
°C
Absolute Maximum Ratings at T
A
=25
°C
Note:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
Part No.
Dice
Lens Type
Iv (mcd)
@ 20mA
Viewing
Angle
Min.
Typ.
2
θ
1/2
APED3820SEC
-
F01
SUPER BRIGHT ORANGE (InGaAlP)
WATER CL EAR
480
800
60°(H)
35°(V)
Symbol
Parameter
Device
Typ.
Max.
Test Conditions
Units
λ
peak
Peak Wavelength
Super Bright Orange
610
nm
I
F
=20mA
λ
D
Dominant Wavelength
Super Bright Orange
601
nm
I
F
=20mA
∆λ
1/2
Spectral Line Half
-
width
Super Bright Orange
29
nm
I
F
=20mA
C
Capacitance
Super Bright Orange
30
pF
V
F
=0V;f=1MHz
V
F
Forward Volt age
Super Bright Orange
2.0
2.5
V
I
F
=20mA
I
R
Reverse Current
Super Bright Orange
10
uA
V
R
= 5V
Parameter
Super Bright Orange
Units
Power dissipation
75
mW
DC Forward Current
30
mA
Peak Forward Current [1]
195
mA
Reverse Voltage
5
V
Operating/Storage Temperature
-
40°C
To +85°C
SPEC NO: DSAF1200
REV NO: V.1 DATE: M AR/16/2005 PAGE:
3
OF
4
APPROVED: J. Lu
CHECKED: Allen Liu DRAWN: H.Q.YUAN ERP:12030
01175
Super Bright Orange APED3820SEC
-
F01
SPEC NO: DSAF1200
REV NO: V.1 DATE: M AR/16/2005 PAGE:
4
OF
4
APPROVED: J. Lu
CHECKED: Allen Liu DRAWN: H.Q.YUAN ERP:12030
01175
Recom mended So lderin g Pattern
(Units : mm
)
Tape Specifications
(Units : mm)
APED3820SEC
-
F01
Remarks:
If special sorting is required (e.g. binning based on forward voltage, luminous intensity, or wavelength),
the typical accuracy of t he sorting process is as foll ows:
1. Wavelength: +/
-
1nm
2. Luminous Intensit y: +/
-
15%
3. Forward Voltage: +/
-
0.1V
Note: Accuracy may depend on the sorting parameters.