UNISONIC TECHNOLOGIES CO., LTD
MMBT2222A
NPN SILICON TRANSISTOR
www.unisonic.com.tw 1 of 6
Copyright © 2013 Unisonic Technologies Co., Ltd QW-R206-019. J
NPN GENERAL PURPOSE
AMPLIFIER
FEATURES
* This device is for use as a medium power amplifier and switch
requiring collector currents up to 600mA.
SOT-23
1
2
3
SOT-523
1
2
3
SOT-323
1
2
3
ORDERING INFORMATION
Ordering Number Package Pin Assignment Packing
Lead Free Halogen Free 1 2 3
MMBT2222AL-AE3-R MMBT2222AG-AE3-R SOT-23 E B C Tape Reel
MMBT2222AL-AL3-R MMBT2222AG-AL3-R SOT-323 E B C Tape Reel
MMBT2222AL-AN3-R MMBT2222AG-AN3-R SOT-523 E B C Tape Reel
MARKING
MMBT2222A NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified.)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 600 mA
Collector Dissipation
SOT-23
PC
350
mW SOT-323 200
SOT-523 150
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient
SOT-23
θJA
357
C/W
SOT-323 625
SOT-523 833
MMBT2222A NPN SILICON TRANSISTOR
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ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO I
C=10μA, IE=0 75 V
Collector-Emitter Breakdown Voltage BVCEO I
C=10mA, IB=0 40 V
Emitter-Base Breakdown Voltage BVEBO I
E=10μA, IC =0 6 V
Collector Cutoff Current ICBO VCB=60V, IE=0 0.01 µA
VCB=60V, IE=0, Ta=150C 10 µA
Emitter Cutoff Current IEBO V
EB=3.0V, IC=0 10 nA
Base Cutoff Current IBL V
CE=60V, VEB
(
OFF
)
=3.0V 20 nA
Collector Cutoff Current ICE
X
V
CE=60V, VEB
(
OFF
)
=3.0V 10 nA
ON CHARACTERISTICS
DC Current Gain hFE
IC =0.1mA, VCE=10V 35
IC =1.0mA, VCE=10V 50
IC =10mA, VCE=10V 75
IC =10mA, VCE=10V, Ta= -55C35
IC =150mA, VCE=10V(Note) 100 300
IC =150mA, VCE=1.0V(Note) 50
IC =500mA, VCE=10V(Note) 40
Collector-Emitter Saturation
Voltage(Note) VCE(SAT) IC =150mA, IB=15mA 0.3 V
IC =500mA, IB=50mA 1.0 V
Base-Emitter Saturation
Voltage(Note) VBE(SAT) IC =150mA, IB=15mA 0.6 1.2 V
IC =500mA, IB=50mA 2.0 V
SMALL SIGNAL CHARACTERISTICS
Real Part of Common-Emitter High
Frequency Input Impedance Re(hje) IC=20mA, VCB=20V, f=300MHz 60 Ω
Transition Frequency fT I
C =20mA, VCE=20V, f=100MHz 300 MHz
Output Capacitance Cobo VCB=10V, IE=0, f=100kHz 8.0 pF
Input Capacitance Cibo VEB=0.5V, IC=0, f=100kHz 25 pF
Collector Base Time Constant rb'Cc IC=20mA, VCB=20V, f=31.8MHz 150 pS
Noise Figure NF IC=100μA, VCE=10V, Rs=1.0kΩ
f=1.0kHz 4.0 dB
SWITCHING CHARACTERISTICS
Delay Time tD V
CC=30V, VBE
(
OFF
)
=0.5V, 10 ns
Rise Time tR I
C=150mA, IB1=15mA 25 ns
Storage Time tS Vcc=30V, IC=150mA 225 ns
Fall Time tF I
B1= IB2=15mA 60 ns
Note: Pulse test: Pulse Width 300μs, Duty Cycle 2.0%
MMBT2222A NPN SILICON TRANSISTOR
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TEST CIRCUITS
500Ω
1.0kΩ
200Ω
30V
16V
≤200ns
0
Saturated Turn-On Switching Time
Saturated Turn-Off Switching Time
MMBT2222A NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS
Collector Current, IC(mA)
0.1 0.3 1 10 30 100 300
0
100
200
300
400
500
125°C
25°C
-40°C
VCE=5V
DC Current Gain vs. Collector Current
DC Current Gain, hFE
Collector Current, IC(mA)
1 10 100 500
0.1
-40°C
β=10
Collector-Emitter Saturation Voltage vs.
Collector Current
125°C
25°C
0.2
0.3
0.4
Collector-Emitter Voltage, VCE(SAT) (V)
Base-Emitter Voltage, VBE(SAT) (V)
Base-Emitter on Voltage, VBE(ON) (V)
Collector Current, ICBO (nA)
Capacitance (pF)
MMBT2222A NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
