MR850 - M R858
FAST RECOVERY
RECTIFIER DIODES
PRV : 50 - 600 Volts
Io : 3.0 Amperes
FEATURES :
* High c ur rent capability
* High surge c ur r ent capability
* High reliability
* Low reverse curr ent
* Low for ward voltage drop
* Fast switc hing for high efficiency
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-201A D M olded plasti c
* Epoxy : UL94V - O rat e flame r etardant
* Lead : Axial lead solderabl e per MIL-S TD-202,
Met hod 208 guar anteed
* Pol ar it y : Col or band denotes cathode end
* Mount ing posit ion : A ny
* Wei ght : 1.16 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at
25
°
C ambient temperature unless otherwise specified
.
Sin
g
le
p
hase , half wave, 60 Hz, resistive o r inductive load.
For ca
p
acitive load, derate current b
y
20%.
SYMBOL MR850 MR851 MR852 MR854 MR856 MR858 UNIT
Maximum Recurrent Peak Reverse Voltage V
RRM
50 100 200 400 600 800 V
Maximum RMS Voltage V
RMS
35 70 140 280 420 560 V
Maxi mum DC Blocki ng Vol t age V
DC
50 100 200 400 600 800 V
Maximum Average Forward Current
0.375"(9. 5mm) Lead Length Ta = 90 °C
Peak Forward Surge Current,
8.3ms Single half sine wave Superimposed
on rated load ( JEDEC Met hod)
Maximum Peak Forward Voltage at I
F
= 3.0 A V
F
1.25 V
Maximum DC Reverse Current Ta = 25 °CI
R
10 μA
at Rated DC Blocking Volt age Ta = 100 °CI
R(H)
150 μA
Maximum Reverse Recovery Tim e ( Note 1 ) Trr 150 ns
Typical Junct ion Capacitance ( Note 2 ) C
J
28 pf
Juncti on Tem peratur e Range T
J
- 65 t o + 150 °C
Storage Temperature Range T
STG
- 65 t o + 150 °C
Notes :
( 1 ) Reverse Recovery Test Condi tions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse volta ge of 4.0 V
DC
Page 1 of 2 Rev. 03: O ct ober 8, 2012
A
A
RATING
I
F(AV)
I
FSM
100
3.0
0.208 (5.3 0)
0.188 (4.8 0)
DO - 201AD
0.374 (9.50)
0.283 (7.20)
0.050 (1.28)
0.048 (1.22)
Dimensions in inches and
(
millim e te r s
)
1.00 (25.4)
MIN.
1.00 (25.4)
MIN.
IATF 0113686
SGS TH07/1033
TH09/2479
TH97/2478
www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( MR850 - MR858 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
+
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise ti me = 10 ns m a x., Source Impedanc e = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.2 - DERATING CURVE FOR OUTPUT FIG.3 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100
AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CH ARACTERISTICS FIG.5 - TYPICAL REVERSE CHARA CTERISTICS
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Page 2 of 2 Rev. 03: O ct ober 8, 2012
60Hz RESIST I VE OR INDUCTIVE LOAD
2.
4
1.
8
1.2
.
6
3.0
100 10
1.0
80
100
60
4
0
2
0
0.1
1
0
80
0.01
0.01
1.
0
0.1
100
140
20
40
60
120
PERCENT OF RATED REVERSE
VOLTAG E, (%)
PEAK FORWARD SURGE
CURRENT, AMPERE S
AVERAGE FORWARD OUTPUT
CURRENT, AMPERE S
FORWARD CURRENT, AMPERES
REVERSE CURRENT, MICROAMPERES
TJ= 25 °C
TJ= 100 °C
TJ= 25 °C
Pulse Width = 300 μs
2% Duty Cycle
8.3 ms SI N G LE HALF SI NE WAVE
Ta = 50 °C
SET TIME BASE FOR 50 ns/cm
50 Vdc
(approx)
OSCILLOSCOPE
( NOTE 1 )
1 Ω
50 Ω10 Ω
D.U.T. PULSE
GENERATOR
( NOTE 2 )
FORWARD VOLTAGE, VOLTS
Trr
+ 0.5 A
0
- 0.25
- 1.0 A
1 cm
IATF 0113686
SGS TH07/1033
TH09/2479
TH97/2478
www.eicsemi.com