1998. 10. 8 1/3
SEMICONDUCTOR
TECHNICAL DATA
BC556/7/8
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
For Complementary With NPN Type BC546/547/548.
MAXIMUM RATING (Ta=25 )
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. COLLECTOR
2. BASE
3. EMITTER
+
_
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base
Voltage
BC556
VCBO
-80
VBC557 -50
BC558 -30
Collector-Emitter
Voltage
BC556
VCEO
-65
VBC557 -45
BC558 -30
Emitter-Base
Voltage
BC556
VEBO
-5
VBC557 -5
BC558 -5
Collector Current
BC556
IC
-100
mABC557 -100
BC558 -100
Emitter Current
BC556
IE
100
mABC557 100
BC558 100
Collector Power Dissipation PC625 mW
Junction Temperature Tj150
Storage Temperature Range Tstg -55 150
1998. 10. 8 2/3
BC556/7/8
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
NOTE : According to the value of hFE the BC546, BC547, BC548 are classified as follows.
CLASSIFICATION none A B C
hFE
BC556 110 450 110 220 200 450 -
BC557 110 800 110 220 200 450 420 800
BC558 110 800 110 220 200 450 420 800
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -15 nA
DC Current Gain (Note)
BC556
hFE VCE=-5V, IC=-2mA
110 - 450
BC557 110 - 800
BC558 110 - 800
Collector-Emitter
Saturation Voltage
BC556
VCE(sat) IC=-100mA, IB=-5mA
- - -0.65
VBC557 - - -0.65
BC558 - - -0.65
Base-Emitter
Saturation Voltage
BC556
VBE(sat) IC=-100mA, IC=-5mA
--0.9 -1.1
VBC557 --0.9 -1.1
BC558 --0.9 -1.1
Base-Emitter Voltage
VBE(ON) 1 VCE=-5V, IC=-2mA -0.6 --0.75 V
VBE(ON) 2 VCE=-5V, IC=-10mA - - -0.8 V
Transition Frequency fTVCE=-5V, IC=-10mA, f=100MHz - 150 - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz, IE=0 - 4.5 - pF
Noise Figure
BC556
NF
VCE=-6V, IC=-0.1mA
Rg=10k , f=1kHz
- 1.0 10
dB
BC557 - 1.0 10
BC558 - 1.0 10
1998. 10. 8 3/3
BC556/7/8
Revision No : 3
