DSA50C150HB preliminary Schottky Diode Gen VRRM = 150 V I FAV = 2x VF = 25 A 0.74 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA50C150HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a DSA50C150HB preliminary Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 150 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 150 V IR reverse current, drain current VR = 150 V TVJ = 25C 450 A VR = 150 V TVJ = 125C 5 mA TVJ = 25C 0.88 V 1.02 V 0.74 V VF IF = forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. 25 A IF = 50 A IF = 25 A IF = 50 A TVJ = 125 C TC = 155C rectangular 0.90 V T VJ = 175 C 25 A TVJ = 175 C 0.53 V d = 0.5 for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = TVJ = 25C IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved typ. 5.8 m 0.95 K/W K/W 0.25 TC = 25C 24 V f = 1 MHz 160 390 161 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20131031a DSA50C150HB preliminary Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 C -55 150 C 150 C 1) Weight 6 MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part number D S A 50 C 150 HB IXYS Logo g = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) XXXXXXXXX Part No. Zyyww Assembly Line abcd Assembly Code Date Code Ordering Standard Part Number DSA50C150HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA50C150HB * on die level Delivery Mode Tube Code No. 505450 T VJ = 175 C Schottky V 0 max threshold voltage 0.53 V R 0 max slope resistance * 3.2 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a DSA50C150HB preliminary Outlines TO-247 A E A2 O P1 OP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 b4 C 3x b A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 O P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a