MITSUBISHI IGBT MODULES ARY CM10AD05-12H MIN RELI . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE CM10AD05-12H IC ..................................................................... 10A VCES ............................................................ 600V Insulated Type 3 Inverter + 3 Converter + Brake + Thermistor APPLICATION AC & DC motor controls, General purpose inverters OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 100 900.25 8 8 8 8 8 OPEN OPEN P1 N1 OPEN 8 0.8 2.54 2.54 2.54 7.62 7.62 12 GUP EUP EVP 13 GVP EWP P 1 2-4.50.25 MOUNTING HOLES (1) 7.5 5 GWP t=0.6 MAIN CIRCUIT TERMINAL 6 6 2.5 18 56 5 5 530.5 18 2.5 PPS 0.6 t=0.6 PPS R S T B U V TH2 W GB E 8 8 TH1 7.5 8 8 8 8 2.54 900.3 8 P1 8 2.54 2.54 2.54 2.54 CONTROL CIRCUIT TERMINAL 2-R5 GUN GVN GWN R B S T GUP GVP GWP EUP EVP EWP GUN GVN GWN GB 4 10 13 LABEL P N1 TH1 TH2 U V W E CIRCUIT DIAGRAM Aug. 1999 MITSUBISHI IGBT MODULES ARY MIN RELI CM10AD05-12H . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE MAXIMUM RATINGS (Tj = 25C) INVERTER PART Symbol Parameter Collector-emitter voltage VCES VGES Gate-emitter voltage IC Collector Current I CM I E (Note.1) Emitter Current I EM (Note.1) PC (Note.3) Maximum collector dissipation Conditions G-E Short C-E Short TC = 25C PULSE TC = 25C PULSE TC = 25C (Note. 2) (Note. 2) Rating 600 20 10 20 10 20 41 Unit V V Rating 600 20 10 20 41 600 10 Unit V V Rating Unit 800 220 10 200 165 V V A A A2s Rating -40 ~ +150 -40 ~ +125 2500 1.47 ~ 1.96 120 Unit A A W BRAKE PART Symbol VCES VGES IC I CM PC (Note.3) VRRM I FM (Note.3) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Maximum collector dissipation Repetitive peak reverse voltage Forward current Conditions G-E Short C-E Short TC = 25C PULSE TC = 25C Clamp diode part Clamp diode part (Note. 2) A W V A CONVERTER PART Symbol VRRM Ea IO I FSM I 2t Parameter Conditions Repetitive peak reverse voltage Recommended AC input voltage DC output current 3 rectifying circuit, T C = 125C Surge (non-repetitive) forward current 1/2 cycle at 60Hz, peak value, Non-repetitive I2t for fusing Value for one cycle of surge current COMMON RATING Symbol Tj Tstg Viso -- -- Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight Conditions AC 1 min. Mounting M4 screw Typical value C C V N*m g Aug. 1999 MITSUBISHI IGBT MODULES ARY MIN RELI CM10AD05-12H . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE ELECTRICAL CHARACTERISTICS (Tj = 25C) INVERTER PART Symbol Parameter Test conditions Limits Typ. -- Max. 1 Unit I CES Collector cutoff current VCE = VCES, V GE = 0V Min. -- VGE(th) Gate-emitter threshold voltage IC = 1.0mA, VCE = 10V 4.5 6 7.5 V -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.1 2.15 -- -- -- 30 -- -- -- -- -- -- 0.03 -- -- 0.5 2.8 -- 1.0 0.9 0.2 -- 120 300 200 300 2.8 110 -- 3.0 4.6 A Limits Typ. -- Max. 1 VGE = VGES , VCE = 0V Tj = 25C Collector-emitter saturation voltage IC = 10A, VGE = 15V VCE(sat) Tj = 150C Input capacitance Cies VCE = 10V Output capacitance Coes VGE = 0V Cres Reverse transfer capacitance QG VCC = 300V, I C = 10A, V GE = 15V Total gate charge t d(on) Turn-on delay time VCC = 300V, I C = 10A tr Turn-on rise time VGE1 = VGE2 = 15V t d(off) RG = 63 Turn-off delay time tf Turn-off fall time Resistive load VEC(Note.1) Emitter-collector voltage IE = 10A, VGE = 0V t rr (Note.1) Reverse recovery time IE = 10A, VGE = 0V Qrr (Note.1) Reverse recovery charge die / dt = - 20A / s Rth(j-c)Q IGBT part, Per 1/6 module Thermal resistance Rth(j-c)R FWDi part, Per 1/6 module I GES Gate-emitter cutoff current (Note.4) mA V nF nC ns V ns C C/W BRAKE PART Symbol Parameter Test conditions Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. -- VGE(th) Gate-emitter threshold voltage IC = 1.0mA, VCE = 10V 4.5 6 7.5 V IGES Gate-emitter cutoff current -- -- -- -- -- -- -- -- -- -- -- 2.1 2.15 -- -- -- 30 -- -- -- 0.5 2.8 -- 1.0 0.9 0.2 -- 1.5 3.0 3.1 A Min. -- -- -- Limits Typ. -- -- -- Max. 8 1.5 3.1 VCE(sat) Cies Coes Cres QG VFM Rth(j-c)Q Rth(j-c)R VGE = VGES, V CE = 0V Tj = 25C IC = 10A, VGE = 15V Collector-emitter saturation voltage Tj = 150C Input capacitance VCE = 10V Output capacitance VGE = 0V Reverse transfer capacitance VCC = 300V, I C = 10A, VGE = 15V Total gate charge IF = 10A, Clamp diode part Forward voltage drop IGBT part Thermal resistance Clamp diode part (Note.4) mA V nF nC V C/W CONVERTER PART Symbol I RRM V FM Rth(j-c) Parameter Repetitive reverse current Forward voltage drop Thermal resistance Test conditions VR = VRRM, T j = 150C IF = 10A Per 1/6 module Unit mA V C/W Aug. 1999 MITSUBISHI IGBT MODULES ARY MIN RELI CM10AD05-12H . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE THERMISTOR PART Symbol Resistance B Constant RTH B ( Parameter Test conditions TC = 25C Resistance at 25C, 50C (Note.5) Min. -- -- Limits Typ. (100) (4000) Max. -- -- Min. Limits Typ. Max. -- 0.05 -- Unit k K ) : These parametric limits are tentative. COMMON RATING Symbol Rth(c-f) Note.1 2 3 4 5 Parameter Contact thermal resistance Test conditions Case to fin, Thermal compound applied*1 (1 module) Unit C/W I E, VEC, t rr, Qrr , die /dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj ) does not exceed Tjmax rating. Junction temperature (Tj ) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. B = (InR 1-InR2)/(1/T1-1/T2) R1 : Resistance at T1(K) R2 : Resistance at T2(K) *1 : Typical value is measured by using Shin-etsu Silicone "G-746". Aug. 1999