DPH 30 IS 600 HI
ns
HiPerDynFRED²
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
450
IA
V
F
2.48
R0.55 K/W
V
R
=
1
3
min.
30
t = 10 ms
Applications:
V
RRM
V600
1T
VJ
V°C=
T
VJ
°C=mA0.2
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
=140°C
d =
P
tot
285 WT
C
°C=
T
VJ
175 °C-55
V
I
RRM
=
=600
30
30
T
VJ
=45°C
DPH 30 IS 600 HI
V
A
600
V600
25
25
25
max. repe titiv e re verse vo l t a g e
reverse current
forward voltage
virt ua l j un ctio n temp e r ature
total power dissipation
max. forward surge current
Conditions Unit
3.02
T
VJ
°C=25
C
J
j
unction capacitance V = V; T
150
V
F0
V1.10T
VJ
=175°C
r
F
12.6
f = 1 MHz = °C25
mΩ
V1.89T
VJ
=°C
I
F
=A
V
30
2.45
I
F
=A60
I
F
=A60
threshold voltage
slope resistance for power loss calculation only
Backside: isolated
3A
T
VJ
=°C
reverse recovery time
A8
35
65
ns
(50 Hz), sine
t
rr
=35 ns
● Housing:
High Performance Dynamic Fast Recovery Diode
Extreme Low Loss and Soft Recovery
Single Diode
ISOPLUS247
●
rIndustry standard outline
●
rDCB isolated backside
●
rIsolation Voltage 3000 V
●
rEpoxy meets UL 94V-0
●
rRoHS compliant
RVJ
I
RM
max. reverse recovery current
I
F
=A;30
25
T=125°C
VJ
-di
F
=A/µs200/dtt
rr
V
R
=V400
T
VJ
=°C25
T=125°C
VJ
µA
30400 pF
thermal resistance junction to case
thJC
rectangular 0.5
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
FAV
average forward current
FAV
150
IXYS reserves the right to change limits, conditions and dimensions.
©
20100126a
Data according to IEC 60747and per diode unless otherwise specified
2010 IXYS all rights reserved
DPH 30 IS 600 HI
5.5
5.5
I
RMS
A
per terminal 70
R
thCH
K/W0.25
T
stg
°C150
storage temperature -55
Weight g6
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
F
C
N120
mount ing forc e with cl ip 20
Ordering Delivering Mode Base Qty Code Key
Standard
Part Name
DPH 30 IS 600 HI 506235Tube 30
Product Markin
Date Code
Part No.
Logo
UL listed
IXYS
abcd
Order Code
D
P
H
30
IS
600
HI
Part number
Diode
HiPerFRED
HiPerDyn
Single Diode
ISOPLUS247 (2)
=
=
=
DHG60I600HA
DSEP60-06A
DSEP60-06AT
TO-247AD (2)
TO-247AD (2)
TO-268AA (D3Pak)
Similar Part Package
Marking on Product
DPH30IS600HI
600
600
600
Voltage Class
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
V
ISOL
V3600
t = 1 second
V3000
t = 1 minute
isolation voltage
d
Spp/App
mm
mm
creepage | striking distance on surface | through air terminal to terminal
d
Spb/Apb
creepage | striking distance on surface | through air terminal to backside
IXYS reserves the right to change limits, conditions and dimensions.
©
20100126a
Data according to IEC 60747and per diode unless otherwise specified
2010 IXYS all rights reserved
DPH 30 IS 600 HI
Outlines ISOPLUS247
IXYS reserves the right to change limits, conditions and dimensions.
©
20100126a
Data according to IEC 60747and per diode unless otherwise specified
2010 IXYS all rights reserved
DPH 30 IS 600 HI
0.0 0.8 1.6 2.4 3.2 4.0
10
20
30
40
50
60
70
80
0 200 400 600
20
40
60
80
100
1 10 100 1000 10000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
04080120160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
K
f
T
VJ
[°C] -di
F
/dt [A/µs]
t[ms]
0 200 400 600
0
200
400
600
800
1000
4
6
8
10
12
14
0 200 400 600
0
4
8
12
16
20
0 200 400 600
0.0
0.2
0.4
0.6
0.8
Q
rr
[µC]
V
F
[V] -di
F
/dt [A/µs]
Z
thJC
[K/W]
I
F
= 60 A
30 A
15 A
I
RM
Q
rr
V
FR
t
fr
T
VJ
= 150°C
Fig. 1 Forward current I
F
versus
forward voltage V
F
Fig. 2 Typ. reverse recovery charge
Q
rr
versus -di
F
/dt
Fig. 3 Typ. reverse recovery current
I
RM
versus -di
F
/dt
Fig. 4 Dynamic parameters
Q
rr
,I
RM
versus T
VJ
Fig. 5 Typ. reverse recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. forward recovery voltage V
FR
& forward recovery time t
fr
vs. di
F
/dt
Fig. 8 Transient thermal impedance junction to case
25°C
I
F
[A]
-di
F
/dt [A/µs]
I
RM
[A]
t
rr
[ns]
-di
F
/dt [A/µs]
t
fr
[ns] V
FR
[V]
0 200 400 600
0
5
10
15
20
25
E
rec
[µJ]
-di
F
/dt [A/µs]
Fig. 7 Typ. recovery energy
E
rec
versus -di
F
/dt
I
F
= 15 A
30 A
60 A
I
F
=60A
30 A
15 A
I
F
= 60 A
30 A
15 A
T
VJ
= 125°C
V
R
=400V
T
VJ
= 125°C
V
R
= 400 V
T
VJ
= 125°C
V
R
= 400 V
T
VJ
= 125°C
V
R
= 400 V
I
F
=30A
T
VJ
=125°C
V
R
= 400 V
IXYS reserves the right to change limits, conditions and dimensions.
©
20100126a
Data according to IEC 60747and per diode unless otherwise specified
2010 IXYS all rights reserved