BSC032N03S G
OptiMOS®2 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC1 for target applications
• Logic level / N-channel
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• Avalanche rated
• dv/dt rated
• Pb-free lead plating; RoHS compliant
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C 100 A
TC=100 °C 77
TA=25 °C,
RthJA=45 K/W2) 23
Pulsed drain current ID,pulse TC=25 °C3) 200
Avalanche energy, single pulse EAS ID=50 A, RGS=25 Ω550 mJ
Reverse diode dv/dtdv/dt
ID=50 A, VDS=24 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage VGS ±20 V
Power dissipation Ptot TC=25 °C 78 W
TA=25 °C,
RthJA=45 K/W2) 2.8
Operating and storage temperature Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
VDS 30 V
RDS(on),max 3.2 mΩ
ID100 A
Product Summary
PG-TDSON-8
Type Package Marking
BSC032N03S G PG-TDSON-8 32N03S
Rev. 1.6 page 1 2006-08-28
BSC032N03S G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 1.6 K/W
Thermal resistance, RthJA minimal footprint - - 62
junction - ambient 6 cm2 cooling area2) --45
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 30 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=70 µA 1.2 1.6 2
Zero gate voltage drain current IDSS
VDS=30 V, VGS=0 V,
Tj=25 °C - 0.1 1 µA
VDS=30 V, VGS=0 V,
Tj=125 °C - 10 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 10 100 nA
Drain-source on-state resistance RDS(on) VGS=4.5 V, ID=50 A - 3.9 4.9 mΩ
VGS=10 V, ID=50 A - 2.7 3.2
Gate resistance RG0.3 0.6 1.2 Ω
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=50 A 57 113 - S
3) See figure 3
1)J-STD20 and JESD22
Values
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.6 page 2 2006-08-28
BSC032N03S G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 3820 5080 pF
Output capacitance Coss - 1360 1810
Reverse transfer capacitance Crss - 173 260
Turn-on delay time td(on) - 7.5 11 ns
Rise time tr- 7.0 11
Turn-off delay time td(off) -3248
Fall time tf- 5.4 8
Gate Char
g
e Characteristics4)
Gate to source charge Qgs -1115nC
Gate charge at threshold Qg(th) - 6.1 8.1
Gate to drain charge Qgd - 7.2 11
Switching charge Qsw -1218
Gate charge total Qg-2939
Gate plateau voltage Vplateau - 2.9 - V
Gate charge total, sync. FET Qg(sync)
VDS=0.1 V,
VGS=0 to 5 V -2634nC
Output charge Qoss VDD=15 V, VGS=0 V -3243
Reverse Diode
Diode continous forward current IS- - 50 A
Diode pulse current IS,pulse - - 200
Diode forward voltage VSD
VGS=0 V, IF=50 A,
Tj=25 °C - 0.84 1 V
Reverse recovery charge Qrr
VR=15 V, IF=IS,
diF/dt=400 A/µs - - 15 nC
4) See figure 16 for gate charge parameter definition
TC=25 °C
Values
VGS=0 V, VDS=15 V,
f=1 MHz
VDD=15 V, VGS=10 V,
ID=25 A, RG=2.7 Ω
VDD=15 V, ID=25 A,
VGS=0 to 5 V
Rev. 1.6 page 3 2006-08-28
BSC032N03S G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
103
102
101
100
102
101
100
10-1
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
100
10-1
10-2
10-3
10-4
10-5
101
100
10-1
10-2
tp [s]
ZthJC [K/W]
0
20
40
60
80
0 40 80 120 160
TC [°C]
Ptot [W]
0
20
40
60
80
100
0 40 80 120 160
TC [°C]
ID [A]
Rev. 1.6 page 4 2006-08-28
BSC032N03S G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
3 V 3.2 V 3.4 V
3.7 V
4 V
4.5 V
10 V
0
2
4
6
8
10
0 50 100
ID [A]
RDS(on) [mΩ]
25 °C
150 °C
0
40
80
120
160
01234
VGS [V]
ID [A]
0
30
60
90
120
150
180
0 50 100
ID [A]
gfs [S]
2.8 V
3 V
3.2 V
3.4 V
3.7 V
4 V
4.5 V
10 V
0
40
80
120
160
200
0123
VDS [V]
ID [A]
Rev. 1.6 page 5 2006-08-28
BSC032N03S G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=50 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
0
1
2
3
4
5
6
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
70 µA
700 µA
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
104
103
102100
1000
10000
0102030
VDS [V]
C [pF]
25 °C
150 °C
150°C, 98%
25°C, 98%
103
102
101
100
0 0.4 0.8 1.2 1.6
VSD [V]
IF [A]
Rev. 1.6 page 6 2006-08-28
BSC032N03S G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=25 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
6 V
15 V
24 V
0
2
4
6
8
10
12
0204060
Qgate [nC]
VGS [V]
20
23
26
29
32
35
38
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
125 °C
1
10
100
1 10 100 1000
tAV [µs]
IAV [A]
Rev. 1.6 page 7 2006-08-28
BSC032N03S G
Package Outline PG-TDSON-8
: Outline
Rev. 1.6 page 8 2006-08-28
BSC032N03S G
Package Outline
P-TDSON-8: Tape
Dimensions in mm
Rev. 1.6 page 9 2006-08-28
BSC032N03S G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
Rev. 1.6 page 10 2006-08-28
