Power Transistors
1
Publication date: February 2003 SJD00197BED
2SD1474
Silicon NPN epitaxial planar type
For power amplification with high forward current transfer ratio
■Features
•High forward current transfer ratio hFE which has satisfactory linearity
•High emitter-base voltage (Collector open) VEBO
•Full-pack package which can be installed to the heat sink with one screw
■Absolute Maximum Ratings TC = 25°C
■Electrical Characteristics TC = 25°C ± 3°C
Unit: mm
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 25 mA, IB = 0 60 V
Collector-base cutoff current (Emitter open)
ICBO VCB = 100 V, IE = 0 100 µA
Emitter-base cutoff current (Collector open)
IEBO VEB = 15 V, IC = 0 100 µA
Forward current transfer ratio *hFE VCE = 4 V, IC = 1 A 300 2
000
Collector-emitter saturation voltage VCE(sat) IC = 5 A, IB = 0.1 A 0.5 V
Transition frequency fTVCE = 12 V, IC = 0.5 A, f = 10 MHz 30 MHz
Turn-on time ton IC = 5 A, IB1 = 0.1 A, IB2 = − 0.1 A 0.3 µs
Storage time tstg VCC = 50 V 1.5 µs
Fall time tf0.6 µs
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 100 V
Collector-emitter voltage (Base open) VCEO 60 V
Emitter-base voltage (Collector open) VEBO 15 V
Collector current IC6A
Peak collector current ICP 12 A
Collector power PC40 W
dissipation Ta = 25°C 2.0
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q P
hFE 300 to 1
200 800 to 2
000
10.0
±0.2
5.5
±0.2
7.5
±0.2
16.7
±0.3
0.7
±0.1
14.0
±0.5
Solder Dip
(4.0)
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.3
5.08
±0.5
213
2.7
±0.2
4.2
±0.2
4.2
±0.2
φ 3.1
±0.1
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
2SD1474
2SJD00197BED
VBE(sat) IChFE ICfT IC
PC TaIC VCE VCE(sat) IC
Cob VCB ton, tstg, tf ICSafe operation area
00 16040 12080
20
60
40
80
Collector power dissipation P
C
(W)
Ambient temperature T
a
(°C)
(1)T
C
=Ta
(2)With a 100×100×2mm
Al heat sink
(3)Without heat sink
(P
C
=2W)
(1)
(2)
(3)
012210486
0
6
5
4
3
2
1
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
I
B
=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
T
C
=25˚C
0.1 1 10
0.01
10
1
0.1
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (A)
I
C
/I
B
=50
T
C
=100˚C
25˚C
–25˚C
0.01 1 10
0.01
10
1
0.1
Base-emitter saturation voltage VBE(sat) (V)
Collector current IC (A)
I
C
/I
B
=50
T
C
=–25˚C
25˚C
100˚C
0.01 0.1 1 10
10
102
103
104
105
Forward current transfer ratio hFE
Collector current IC (A)
VCE=4V
TC=100˚C
25˚C
–25˚C
0.01 0.1 1 10
0.1
1
10
100
1
000
Collector current I
C
(A)
Transition frequency f
T
(MHz)
VCE=12V
f=10MHz
TC=25˚C
0.1 1 10 100
1
10
102
103
104
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Collector-base voltage VCB (V)
IE=0
f=1MHz
TC=25˚C
0.01
0.1
1
10
100
08264
Turn-on time t
on
, Storage time t
stg
, Fall time t
f
(µs)
Collector current I
C
(A)
t
stg
t
f
t
on
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=50
(I
B1
=–I
B2
)
V
CC
=50V
T
C
=25˚C
0.01 1
0.1
1
10
100
10 100
1
000
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
Non repetitive pulse
TC=25˚C
ICP
IC
t=10ms
DC
2SD1474
3
SJD00197BED
Rth t
1
10−2
10−1
10
103
102
103104
102
10110−1
10−310−2
10−4
Time t (s)
Thermal resistance Rth (°C/W)
(1)
(2)
(1)Without heat sink
(2)With a 100×100×2mm Al heat sink
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
•Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
•Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
