BSP89,115 - NEXPERIA - Pdf.Support

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DATA SH EET

Product speciﬁcation

Supersedes data of 1997 Jun 23 2001 May 18

DISCRETE SEMICONDUCTORS

BSP89

N-channel enhancement mode

vertical D-MOS transistor

ook, halfpage

M3D087

2001 May 18 2

Philips Semiconductors Product speciﬁcation

N-channel enhancement mode

vertical D-MOS transistor BSP89

FEATURES

•Direct interface to C-MOS, TTL,

etc.

•High-speed switching

•No secondary breakdown.

DESCRIPTION

N-channel enhancement mode

vertical D-MOS transistor in a

SOT223package,intendedforuseas

a surface-mounted device in line

current interrupters in telephone sets

and for application in relay, high

speed and line transformer drivers.

PINNING - SOT223

PIN DESCRIPTION

Code: BSP89

1 gate

2 drain

3 source

4 drain

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

VDS drain-source voltage (DC) 240 V

VGSth gate-source threshold voltage 2 V

IDdrain current (DC) 375 mA

RDSon drain-source on-state resistance 5 Ω

Fig.1 Simplified outline (SOT223) and symbol.

handbook, halfpage

MAM109

123

Top view s

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum

6cm

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VDS drain-source voltage (DC) −240 V

VGSO gate-source voltage (DC) open drain −±20 V

IDdrain current (DC) −375 mA

IDM peak drain current −1.5 A

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −1.5 W

Tstg storage temperature −55 +150 °C

Tjjunction temperature −150 °C

2001 May 18 3

Philips Semiconductors Product speciﬁcation

N-channel enhancement mode

vertical D-MOS transistor BSP89

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum

6cm

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

SYMBOL PARAMETER VALUE UNIT

Rth j-a thermal resistance from junction to ambient; note 1 83.3 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)DSS drain-source breakdown voltage ID=10µA; VGS = 0 240 −−V

DSS drain-source leakage current VDS = 60 V; VGS =0 −−200 nA

IGSS gate-source leakage current VGS =±20 V; VDS =0 −−100 nA

VGSth gate-source threshold voltage ID= 1 mA; VGS =V

DS 0.8 −2V

DSon drain-source on-state resistance ID= 340 mA; VGS =10V −2.8 5 Ω

ID= 340 mA; VGS = 4.5 V −−7.5 Ω

 Yfs transfer admittance ID= 340 mA; VDS = 25 V 140 600 −mS

Ciss input capacitance VDS = 25 V; VGS = 0; f = 1 MHz −100 120 pF

Coss output capacitance VDS = 25 V; VGS = 0; f = 1 MHz −20 30 pF

Crss reverse transfer capacitance VDS = 25 V; VGS = 0; f = 1 MHz −10 15 pF

Switching times (see Figs 3and 4)

ton turn-on time ID= 250 mA; VDD =50V;

GS = 0 to 10 V −610ns

off turn-off time ID= 250 mA; VDD =50V;

GS = 0 to 10 V −47 60 ns

2001 May 18 4

Philips Semiconductors Product speciﬁcation

N-channel enhancement mode

vertical D-MOS transistor BSP89

Fig.2 Power derating curve.

handbook, halfpage

0 50 100

Ptot

(W)

200

1.6

150

1.2

0.8

0.4

MBB693

Tamb (°C)

Fig.3 Switching times test circuit.

handbook, halfpage

MBB691

50 Ω

VDD = 50 V

10 V

0 V

Fig.4 Input and output waveforms.

handbook, halfpage

MBB692

10 %

90 %

10 %

ton toff

OUTPUT

INPUT

2001 May 18 5

Philips Semiconductors Product speciﬁcation

N-channel enhancement mode

vertical D-MOS transistor BSP89

PACKAGE OUTLINE

UNIT A1bpcDEe

pQywv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.10

0.01

1.8

1.5 0.80

0.60

3.1

2.9 0.32

0.22 6.7

6.3 3.7

3.3 2.3

4.6 7.3

6.7 1.1

0.7 0.95

0.85 0.1 0.10.2

DIMENSIONS (mm are the original dimensions)

SOT223 SC-73 97-02-28

99-09-13

detail X

vMA

0 2 4 mm

scale

132

Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223

2001 May 18 6

Philips Semiconductors Product speciﬁcation

N-channel enhancement mode

vertical D-MOS transistor BSP89

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DATA SHEET STATUS(1) PRODUCT

STATUS(2) DEFINITIONS

Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

Preliminary data Qualiﬁcation This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change

Notiﬁcation (CPCN) procedure SNW-SQ-650A.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

atthese orat anyother conditionsabove thosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuchapplicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

theuse ofanyoftheseproducts, conveysnolicenceortitle

under any patent, copyright, or mask work right to these

products,and makesnorepresentations orwarranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

2001 May 18 7

Philips Semiconductors Product speciﬁcation

N-channel enhancement mode

vertical D-MOS transistor BSP89

NOTES

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

2001 72

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Printed in The Netherlands 613510/03/pp8 Date of release: 2001 May 18 Document order number: 9397 750 08248