ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VDRM
=
6500
V
Phase Control Thyristor
5STP 18M6500
IT(AV)M
=
1800
A
IT(RMS)
=
2820
A
ITSM
=
50·103
A
VT0
=
1.2
V
rT
=
0.43
m
Doc. No. 5SYA1010-05 Aug. 13
Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Maximum rated values 1)
Parameter
Symbol
5STP 18M6500
Unit
Max. surge peak forward and
reverse blocking voltage
VDSM,
VRSM
tp = 10 ms, f = 5 Hz
Tvj = 5…125 °C, Note 1
6500
V
Max repetitive peak forward
and reverse blocking voltage
VDRM,
VRRM
f = 50 Hz, tp = 10 ms, tp1 = 250 s,
Tvj = 5…125 °C, Note 1, Note 2
6500
V
Max crest working forward
and reverse voltages
VDWM,
VRWM
4340
V
Critical rate of rise of
commutating voltage
dv/dtcrit
Exp. to 4340 V, Tvj = 125 °C
2000
V/µs
Characteristic values
Parameter
Symbol
min
typ
max
Unit
Forward leakage current
IDRM
VDRM, Tvj = 125 °C
600
mA
Reverse leakage current
IRRM
VRRM, Tvj = 125 °C
600
mA
Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below +5 °C.
Note 2: Recommended minimum ratio of VDRM / VDWM or VRRM / VRWM = 2. See App. Note 5SYA 2051.
Mechanical data
Maximum rated values 1)
Parameter
Symbol
min
typ
max
Unit
Mounting force
FM
63
70
84
kN
Acceleration
a
Device unclamped
50
m/s2
Acceleration
a
Device clamped
100
m/s2
Characteristic values
Parameter
Symbol
Conditions
min
typ
max
Unit
Weight
m
1.85
kg
Housing thickness
H
FM = 70 kN, Ta = 25 °C
35.1
35.5
mm
Surface creepage distance
DS
45
mm
Air strike distance
Da
21
mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
t
tp1
VDRM,VRRM
VAK
VDWM,VRWM
tp
5STP 18M6500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1010-05 Aug. 13 page 2 of 7
On-state
Maximum rated values 1)
Parameter
Symbol
Conditions
min
typ
max
Unit
Average on-state current
IT(AV)M
Half sine wave, Tc = 70 °C
1800
A
RMS on-state current
IT(RMS)
2820
A
Peak non-repetitive surge
current
ITSM
tp = 10 ms, Tvj = 125 °C,
sine half wave,
VD = VR= 0 V, after surge
50·103
A
Limiting load integral
I2t
12.5·106
A2s
Peak non-repetitive surge
current
ITSM
tp = 10 ms, Tvj = 125 °C,
sine half wave,
VR= 0.6·VRRM, after surge
29.5·103
A
Limiting load integral
I2t
4.35·106
A2s
Characteristic values
Parameter
Symbol
Conditions
min
typ
max
Unit
On-state voltage
VT
IT = 1600 A, Tvj = 125 °C
1.9
V
Threshold voltage
V(T0)
IT = 1000 A - 3000 A, Tvj= 125 °C
1.2
V
Slope resistance
rT
0.43
m
Holding current
IH
Tvj = 25 °C
125
mA
Tvj = 125 °C
75
mA
Latching current
IL
Tvj = 25 °C
500
mA
Tvj = 125 °C
250
mA
Switching
Maximum rated values 1)
Parameter
Symbol
Conditions
min
typ
max
Unit
Critical rate of rise of on-state
current
di/dtcrit
Tvj = 125 °C,
ITRM = 2000 A,
VD 0.67·VDRM,
IFG = 2 A, tr = 0.5 µs
Cont.
f = 50 Hz
250
A/µs
Cont.
f = 1 Hz
1000
A/µs
Circuit-commutated turn-off
time
tq
Tvj = 125 °C, ITRM = 2000 A,
VR = 200 V, diT/dt = -1.5 A/µs,
VD 0.67VDRM, dvD/dt = 20 V/µs
800
µs
Characteristic values
Parameter
Symbol
Conditions
min
typ
max
Unit
Reverse recovery charge
Qrr
Tvj = 125 °C, ITRM = 2000 A,
VR = 200 V, diT/dt = -1.5 A/µs
2400
3600
µAs
Reverse recovery current
IRM
40
80
A
Gate turn-on delay time
tgd
Tvj = 25 °C, VD = 0.4VRM,
IFG = 2 A, tr = 0.5 µs
3
µs
5STP 18M6500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1010-05 Aug. 13 page 3 of 7
Triggering
Maximum rated values 1)
Parameter
Symbol
Conditions
min
typ
max
Unit
Peak forward gate voltage
VFGM
12
V
Peak forward gate current
IFGM
10
A
Peak reverse gate voltage
VRGM
10
V
Average gate power loss
PG(AV)
see Fig. 7
W
Characteristic values
Parameter
Symbol
Conditions
min
typ
max
Unit
Gate-trigger voltage
VGT
Tvj = 25 °C
2.6
V
Gate-trigger current
IGT
Tvj = 25 °C
400
mA
Gate non-trigger voltage
VGD
VD = 0.4·VDRM, Tvjmax = 125 °C
0.3
V
Gate non-trigger current
IGD
VD = 0.4·VDRM, Tvjmax = 125 °C
10
mA
Thermal
Maximum rated values 1)
Parameter
Symbol
Conditions
min
typ
max
Unit
Operating junction
temperature range
Tvj
125
°C
Storage temperature range
Tstg
-40
140
°C
Characteristic values
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
i c)-th(j
i
i
1
2
3
4
Ri(K/kW)
6.280
1.070
1.090
0.520
i(s)
0.8956
0.1606
0.0256
0.0093
Fig. 1 Transient thermal impedance (junction-to-
case) vs. time
Parameter
Symbol
Conditions
min
typ
max
Unit
Thermal resistance junction
to case,
Rth(j-c)
Double-side cooled
Fm = 63... 84 kN
9
K/kW
Rth(j-c)A
Anode-side cooled
Fm = 63... 84 kN
18
K/kW
Rth(j-c)C
Cathode-side cooled
Fm = 63... 84 kN
18
K/kW
Thermal resistance case to
heatsink,
Rth(c-h)
Double-side cooled
Fm = 63... 84 kN
1.5
K/kW
Rth(c-h)
Single-side cooled
Fm = 63... 84 kN
3
K/kW
5STP 18M6500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1010-05 Aug. 13 page 4 of 7
Max. on-state characteristic model:
VT125
TTvjTTvjTTvjTvj IDICIBA )1ln(
Valid for IT = 400 - 6000 A
A125
B125
C125
D125
871.4·10-3
93.0·10-6
-20.8·10-3
25.66·10-3
Fig. 2 On-state voltage characteristics
Fig. 3 On-state voltage characteristics,
Tvj_start = 125 °C, 10 ms sine half wave
Fig. 4 On-state power dissipation vs. mean on-state
current, turn-on losses excluded
Fig. 5 Max. permissible case temperature vs. mean
on-state current, switching losses ignored
5STP 18M6500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1010-05 Aug. 13 page 5 of 7
Fig. 6 Recommended gate current waveform
Fig. 7 Max. peak gate power loss
Fig. 8 Reverse recovery charge vs. decay rate of
on-state current
Fig. 9 Peak reverse recovery current vs. decay
rate of on-state current
IGM
IGon
100 %
90 %
10 %
IGM » 2..5 A
IGon ³ 1.5 IGT
diG/dt ³ 2 A/s
tr 1 s
tp(IGM)» 5...20 s
diG/dt
tr
tp (IGM)
IG (t)
t
tp (IGon)
5STP 18M6500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1010-05 Aug. 13 page 6 of 7
Turn-on and Turn-off losses
Fig. 10 Turn-on energy, half sinusoidal waves
Fig. 11 Turn-on energy, rectangular waves
Fig. 12 Turn-off energy, half sinusoidal waves
Fig. 13 Turn-off energy, rectangular waves
Total power loss for repetitive waveforms:
fWfWPP offonTTOT
where
dtIVI
T
PT
TTTT
0)(
1
Fig. 14 Current and voltage waveforms at turn-off
Fig. 15 Relationships for power loss
Qrr
IT(t), V(t)
t
-diT/dt
IT(t)
-V0
-VRRM
V(t)
-IRRM
-dv/dtcom
5STP 18M6500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1010-05 Aug. 13
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Fig. 16 Device Outline Drawing
Related documents:
5SYA 2020
Design of RC-Snubber for Phase Control Applications
5SYA 2049
Voltage definitions for phase control thyristors and diodes
5SYA 2051
Voltage ratings of high power semiconductors
5SYA 2034
Gate-Drive Recommendations for PCT's
5SYA 2036
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
5SZK 9104
Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please
contact factory
5SZK 9105
Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on
request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.