BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series
Vishay Semiconductors
for merly General Semiconductor
Document Number 88549 www.vishay.com
03-Jul-02 1
Dual Ultrafast Soft Recover y Rectifier
Rever se V oltage 100 to 200V Forward Current 10A
Reverse Recovery Time 20ns
0.08
(2.032)
0.24
(6.096)
0.42
(10.66)
0.63
(17.02)
0.12
(3.05)
0.33
(8.38)
Mounting Pad Layout TO-263AB
0.380 (9.65)
0.411 (10.45)
0.320 (8.13)
0.360 (9.14)
0.591 (15.00)
0.624 (15.85)
12
0.245 (6.22)
MIN
K
K
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.014 (0.36)
0.021 (0.53)
0.110 (2.79)
0.140 (3.56)
0.090 (2.29)
0.110 (2.79)
0.047 (1.19)
0.055 (1.40)
PIN 1
PIN 2 K - HEATSINK
0-0.01 (0-0.254)
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41) 0.205 (5.20)
0.195 (4.95)
13
PIN
2
0.060 (1.52)
0.405 (10.27)
0.383 (9.72)
0.191 (4.85)
0.171 (4.35)
0.600 (15.5)
0.580 (14.5)
0.560 (14.22)
0.530 (13.46)
0.037 (0.94)
0.027 (0.69)
0.140 (3.56)
0.130 (3.30)
0.350 (8.89)
0.330 (8.38)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.131 (3.39)
0.122 (3.08)
0.110 (2.80)
0.100 (2.54)
0.022 (0.55)
0.014 (0.36)
DIA.
DIA.
0.676 (17.2)
0.646 (16.4)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
PIN 2
PIN 1
PIN 3
ITO-220AB (BYQ28EF, UGF10 Series)
TO-220AB (BYQ28E, UG10 Series)
Dimensions in inches
and (millimeters)
TO-263AB (BYQ28EB, UGB10 Series)
123
PIN
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
CASE
1.148 (29.16)
1.118 (28.40)
PIN 2
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.160 (4.06)
0.140 (3.56)
0.410 (10.41)
0.390 (9.91) 0.635 (16.13)
0.625 (15.87)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
PIN 1
PIN 3
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• High reverse energy capability
• Excellent high temperature switching
• High temperature soldering guaranteed: 250°C/10
seconds at terminals
• Glass passivated chip junction
• Soft recover y characteristics
Mechanical Data
Case: JEDEC T O-220AB , IT O-220AB & T O-263AB
molded plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity: As marked Mounting Position: Any
Mounting T orque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88549
203-Jul-02
Maximum Ratings (TC= 25°C unless otherwise noted)
UG10BCT UG10CCT UG10DCT
Parameter Symbol
BYQ28E-100 BYQ28E-150 BYQ28E-200
Unit
Maximum repetitive peak reverse voltage VRRM 100 150 200 V
Wor king peak reverse voltage VRWM 100 150 200 V
Maximum DC blocking voltage VDC 100 150 200 V
Maximum average forward rectified current Total device 10
at TC= 100°C Per leg IF(AV) 5A
Peak forward surge current
8.3ms single half sine-wave superimposed IFSM 55 A
on rated load (JEDEC Method) per leg
Repetitive peak reverse current per leg at tp= 100µsI
RRM 0.2 A
Electrostatic discharge capacitor voltage,
Human body model: C = 250pF, R = 1.5kΩVC8KV
Operating junction and storage temperature range TJ, TSTG –40 to +150 °C
Non-repetitive peak reverse current per leg IRSM 0.2 A
at tp= 100µs
RMS Isolation voltage (BYQ28EF, UGF types) 4500 (NOTE 1)
from terminals to heatsink with t = 1 second, RH ≤30% VISOL 3500 (NOTE 2) V
1500 (NOTE 3)
Electrical Characteristics(TC= 25°C unless otherwise noted)
Parameter Symbol
Value
Unit
Maximum instantaneous forward voltage per leg (Note 4)
at IF = 10A, TJ = 25°C 1.25
at IF = 5A, TJ = 25°C VF1.10 V
at IF = 5A, TJ = 150°C 0.895
Maximum reverse current per leg TJ = 25°C 10
at working peak reverse voltage (Note 4) TJ = 100°C IR200 µA
Maximum reverse recovery time per leg at
IF = 1.0A, di/dt = 100A/µs, VR = 30V, Irr = 0.1IRM trr 25 ns
Maximum reverse recover y time per leg at
IF = 0.5A, IR = 1.0A, Irr = 0.25A trr 20 ns
Maximum stored charge per leg
IF = 2A, di/dt = 20A/µs, VR = 30V, Irr = 0.1IRM Qrr 9nC
Thermal Characteristics(TC= 25°C unless otherwise noted)
UG10 UGF10 UGB10
Parameter Symbol BYQ28E BYQ28EF BYQ28EB Unit
Typical ther mal resistance — junction to ambient RΘJA 50 55 50 °C/W
— junction to case RΘJC 4.5 6.7 4.5 °C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle
BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series
Vishay Semiconductors
for merly General Semiconductor
Document Number 88549 www.vishay.com
03-Jul-02 3
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
IF – Instantaneous Forward Current (A)
100
10
IR – Instantaneous Reverse Current (mA)
Typical Reverse Characteristics Per Leg
1.0
0.1
0.01
Forward Current Derating Curve
0
5
15
050 100 150
10
Average Forward Current (A)
Peak Forward Surge Current (A)
Number of Cycles at 60 HZ
Maximum Non-Repetitive Peak
Forward Surge Current Per Leg
1
10
100
110
100
Case Temperature (°C)
1.0
10
100
1000
0.1
TJ = 125°C
100°C
25°C
Resistive or Inductive Load
TJ = 25°C
TJ = 125°C
110
100
10
100
1
0.1 Rev erse Voltage (V)
TJ = 125°C
f = 1.0 MHZ
Vsig = 50mVp-p
0.2 0.4 0.8 1.40.6 1.0 1.2
Pulse Width = 300µs
1% Duty Cycle
TC = 105°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
TJ = 100°C
Reverse Switching
Characteristics Per Leg
0
50
25 50 75 100 125
10
20
30
Stored Charge/Reverse Recovery Time
(nC/ns)
40
@5A, 50A/µs
@2A, 20A/µs
@2A, 20A/µs
@1A, 100A/µs
@5A, 50A/µs
20 10040 60 80
Percent of Rated Peak Reverse Voltage (%)
Typical Junction Capacitance Per Leg
pF – Junction Capacitance
Typical Instantaneous
Forward Characteristics Per Leg
Instantaneous Forward Voltage (V)
Junction Temperature (°C)
@1A, 100A/µs
trr
Qrr
