DFM400XXM65-K000 Fast Recovery Diode Module DS5806-1.0 November 2004 (LN23657) . FEATURES Low Reverse Recovery Charge High Switching Speed KEY PARAMETERS VRRM VF (typ) IF (max) IFM (max) 6500V 3.6V 400A 800A Low Forward Voltage Drop Isolated MMC Base plate With AIN Substrates Dual Diodes Can Be Paralleled for 800A Rating APPLICATIONS Chopper Diodes Boost and Buck Converters Free-wheel Circuits Snubber Circuits Resonant Converters Induction Heating Fig. 1 Circuit diagram Multi-level Switch Inverters The DFM400XXM65-K000 is a dual 6500 volt, fast recovery diode (FRD) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. Fast switching times and low reverse recovery losses allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Outline type code: X (See package details for further information) Fig. 2 Electrical connections (not to scale) Order As: DFM400XXM65-K000 Note: When ordering, please use the complete part number. 1/7 www.dynexsemi.com DFM400XXM65-K000 SEMICONDUCTOR ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under `Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25 C unless stated otherwise Parameter Symbol Test Conditions Max. Units Repetitive peak reverse voltage Tvj = 125 C Tvj =25 C Tvj = -40 C 6500 6300 5800 V IF Forward current (per arm) DC, Tcase = 75 C 400 A IFM Max. forward current Tcase = 115 C, tp = 1ms 800 A 97 kA s VRRM It 2 I t value fuse current rating 2 VR = 0, tp = 10ms, Tvj = 125 C 2 Pmax Maximum power dissipation Tcase = 25 C, Tvj = 125 C 3300 W Iisol Isolation voltage Commoned terminals to base plate, AC RMS, 1 min, 50Hz 10.2 kV Qpd Partial discharge IEC1287. V1 = 7000V, V2 = 5100V, 50Hz RMS 10 pC THERMAL AND MECHANICAL RATINGS Internal insulation: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Symbol Rth(j-c) AIN AISiC 56mm 26mm >600 Parameter Thermal resistance - diode (per arm) Test Conditions Continuous dissipation - Min. Typ. Max. Units - - 30 C/kW - - 8 C/kW junction to case Rth(c-h) Tj Tstg - Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Junction temperature - -40 - 125 C Storage temperature range - -40 - 125 C Mounting - M6 - - 5 Nm Electrical connections - M8 - - 10 Nm Screw torque 2 /7 www.dynexsemi.com DFM400XXM65-K000 SEMICONDUCTOR STATIC ELECTRICAL CHARACTERISTICS - PER ARM Tvj = 25 C unless stated otherwise. Parameter Symbol Test Conditions Min. Typ. Max. Units 40 mA IRM Peak reverse current VR = 3600V, Tvj = 125 C - - VF Forward voltage IF = 400A - 3.6 V IF = 400A, Tvj = 125 C - 4.1 V - - 40 - nH Test Conditions Min. Typ. Max. Units - - 20 - nH L Inductance (per arm) STATIC ELECTRICAL CHARACTERISTICS Tvj = 25 C unless stated otherwise. Symbol LM RINT Parameter Module inductance Internal resistance (per arm) 0.37 m DYNAMIC ELECTRICAL CHARACTERISTICS - PER ARM Tvj = 25 C unless stated otherwise. Symbol Parameter Test Conditions Min. Typ. Max. Units IF = 400V, - 300 - A Irr Peak reverse recovery current Qrr Reverse recovery charge dIF/dt = 1300A/s, - 700 - C Erec Reverse recovery energy VR = 3600V - 1300 - mJ Test Conditions Min. Typ. Max. Units IF = 400A, - 370 - A Tvj = 125 C unless stated otherwise. Parameter Symbol Irr Peak reverse recovery current Qrr Reverse recovery charge dIF/dt = 1600A/s - 1000 - C Erec Reverse recovery energy VR = 3600V - 2000 - mJ 3/7 www.dynexsemi.com DFM400XXM65-K000 Transient thermal impedance, Z th(j-c) - (C/kW) SEMICONDUCTOR 800 25C 125C Current - (A) 600 400 200 100 10 1 0.001 0 0.0 1.0 2.0 3.0 4.0 5.0 10 6.0 Forward voltage - (V) Ri (C/kW) ti (ms) Fig.3 Diode typical forward characteristics 1 1.13 0.17 2 5.27 8.08 3 9.1 51.92 4 14.64 280.5 Fig.4 Transient thermal impedance 450 3500 400 DC Forward Current, IF - (A) 3000 Power dissipation, P tot - (W) 0.01 0.1 1 Pulse width, tp - (s) 2500 2000 1500 1000 350 300 250 200 150 100 500 50 0 0 0 50 100 Case Temperature, Tcase (C) Fig.5 Power dissipation 150 0 50 100 150 Case Temperature, Tcase - ( C) Fig.6 6DC current rating vs case temperature 4 /7 www.dynexsemi.com DFM400XXM65-K000 SEMICONDUCTOR Reverse recovery current, I rr - (A) 900 800 700 600 500 400 300 200 100 0 0 1000 2000 3000 4000 5000 6000 Reverse voltage, VR - (V) Fig.7 RBSOA 5/7 www.dynexsemi.com DFM400XXM65-K000 SEMICONDUCTOR PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 1700g Module outline type code: X 6 /7 www.dynexsemi.com DFM400XXM65-K000 SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33(0)1 60 69 32 36. Fax: +33(0)1 60 69 31 97 France: Tel: (01) 60 69 32 36, (02) 47 55 75 53 Fax: (01) 60 69 31 97, (02) 47 55 75 59 Germany, Northern Europe, Spain & Rest of World: Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 North America: Tel: (440) 259 2060. Fax: (440) 259 2059. Tel: (949) 733 3005. Fax: (949) 733 2986. These offices are supported by Representatives and Distributors in many countries world-wide. Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 7/7 www.dynexsemi.com