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FEATURES
Low Reverse Recovery Charge
High Switching Speed
Low Forward Voltage Drop
Isolated MMC Base pl ate With AIN Substrates
Dual Diodes Can Be Paralleled for 800A Rating
APPLICATIONS
Chopper Diodes
Boost and Buck Converters
Free-wheel Circuits
Snubber Circuits
Resonant Converters
Induction Heat in g
Multi-level Sw itc h Inverters
The DFM400XXM65-K000 is a dual 6500 volt, fast
recovery diode (FRD) module. Designed for low
power loss, the module is suitable for a variety of
high voltage applications in motor drives and power
conversion.
Fast switching times and low reverse recovery
losses allow high frequency operation making the
device suitable for the latest drive designs
employing pwm and high frequency switching.
These m odules incorporate e lectricall y is ol ate d base
plates and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise groun ded heat sinks for safety.
ORDERING INFOR MATION
Order As:
DFM400XXM65-K000
Note: When ordering, please use the complete part
number.
.
KEY PARAMETERS
VRRM 6500V
VF(typ) 3.6V
IF(max) 400A
IFM (max) 800A
Fig. 1 Circuit diagram
Outline type code: X
(See package details for further info rmat ion)
Fig. 2 Electrical connections (not to scale)
DFM400XXM65-K000
Fast Recovery Diode Module
DS5806-1.0 November 2004 (LN23657)
SEMICONDUCTOR
DFM400XXM65-K000
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ABSOLUTE MAXIMUM RATINGS – PER ARM
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the
package. Appropriate safety precautions should alwa ys be followed. Exposure to Absolute Maximum Ratings
may affect device reliability.
Tcase = 25° C unless stated otherwise
Symbol
Parameter
Test Conditions Max. Units
VRRM Repetitive peak reverse voltage Tvj = 125°C
Tvj =25°C
Tvj = -40°C
6500
6300
5800 V
IFForward current (per arm) DC, Tcase = 75°C 400 A
IFM Max. forward current Tcase = 115°C, tp = 1ms 800 A
I2t I2t value fuse current r ating VR = 0, tp = 10ms, Tvj = 125°C 97 kA2s
Pmax Maximum power dissipation Tcase = 25°C, Tvj = 125°C 3300 W
Iisol Isolation voltage Commoned term ina ls to base plate, AC RMS, 1 min, 50Hz 10.2 kV
Qpd Partial discharge IEC1287. V1 = 7000V, V2 = 5100V, 50Hz RMS 10 pC
THERMAL AND MECHANICAL RATINGS
Internal insulation: AIN
Baseplate material: AISiC
Creepage dista nc e: 56mm
Clearance: 26mm
CTI (Critical Tracking Index): >600
Symbol
Parameter
Test Conditions Min. Typ. Max. Units
Rth(j-c) Thermal resistance – diode (per arm) Continuous dissipation –
junction to case
- - 30 °C/kW
Rth(c-h) Thermal resistance – case to heatsink
(per module) Mounting torque 5Nm
(with mounting grea se)
- - 8 °C/kW
TjJunction temperature - -40 -125 °C
Tstg Storage temperat ure range - -40 -125 °C
- Screw t orque Mounting – M6 - - 5 Nm
Electrical connections – M8 - - 10 Nm
SEMICONDUCTOR
DFM400XXM65-K000
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STATIC ELECTRIC AL CHARACTERISTICS – PER ARM
Tvj = 25° C unless stated otherwise.
Symbol
Parameter
Test Conditions Min. Typ. Max. Units
IRM Peak reverse current VR = 3600V, Tvj = 125°C - - 40 mA
VFForward voltage IF = 400A - 3.6 V
IF = 400A, Tvj = 125°C - 4.1 V
L Inductance (per arm) - - 40 - nH
STATIC ELECTRIC AL CHARACTERISTICS
Tvj = 25° C unless stated otherwise.
Symbol
Parameter
Test Conditions Min. Typ. Max. Units
LMModule inductance - - 20 - nH
RINT Internal resistance (per arm) 0.37 m
DYNAMIC ELECTRICAL CHARACTERISTICS – PER ARM
Tvj = 25° C unless stated otherwise.
Symbol
Parameter
Test Conditions Min. Typ. Max. Units
Irr Peak reverse recovery current IF = 400V, -300 - A
Qrr Reverse recovery charge dIF/dt = 1300A/µs, -700 - µC
Erec Reverse recovery energy VR = 3600V -1300 - mJ
Tvj = 125° C unless stated otherwise.
Symbol
Parameter
Test Conditions Min. Typ. Max. Units
Irr Peak reverse recovery current IF = 400A, -370 - A
Qrr Reverse recovery charge dIF/dt = 1600A/µs -1000 - µC
Erec Reverse recovery energy VR = 3600V -2000 - mJ
SEMICONDUCTOR
DFM400XXM65-K000
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1
10
100
0.001
0.01
0.1
1
10
Pulse w idth, t
p
- (s)
Transient thermal impedance, Z th(j-c) - (°C/kW)
0
200
400
600
800
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Forward voltage - (V)
Current - (A)
25ºC
125ºC
1
2
3
4
Ri (°C/kW)
1.13
5.27
9.1
14.64
ti (ms)
0.17
8.08
51.92
280.5
Fig.3 Diode typical forward characteristics Fig.4 Transient thermal impedance
0
500
1000
1500
2000
2500
3000
3500
0
50
100
150
Case Temperature, T
case
(°C)
Power dissipation, Ptot - (W)
0
50
100
150
200
250
300
350
400
450
0
50
100
150
Case Temperatu re, T
case
-
(
°C)
DC Forward Current, IF - (A)
Fig.5 Power dissipation Fig.6 6DC current rati ng vs case temperature
SEMICONDUCTOR
DFM400XXM65-K000
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0
100
200
300
400
500
600
700
800
900
0
1000
2000
3000
4000
5000
6000
Reverse voltage, V
R
- (V)
Reverse recovery current, Irr - (A)
Fig.7 RBSOA
SEMICONDUCTOR
DFM400XXM65-K000
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PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm,
unless stated otherwise.
DO NOT SCALE.
Nominal weight: 1700g
Module outline type code: X
SEMICONDUCTOR
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the
basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advanc es in
device voltag es and current capability of our semiconductors.
We offe r an extensi ve range of air and liquid cooled assemblies covering the full r ange of circuit designs in general
use today. The Assembly gr oup offers high quality e n g i neering support dedicated to designing new units to satisfy
the growing needs of our customers.
Using the latest CAD m ethods our team of design and applications engineers aim to provide the Power Assembly
Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been
designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and
liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales
representative or Customer Services.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LTD Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom. SALES OFFICES
Tel: +44(0)1522 500500 Benelux, I taly & Switzerland: Tel: +33(0)1 60 69 32 36. Fax: +33(0)1 60 69 31 97
Fax: +44(0)1522 500550 France: Tel: (01) 60 69 32 36, (02) 47 55 75 53
Fax: (01) 60 69 31 97, (02) 47 55 75 59
Germany, Northern Europe, Spain & Rest of World:
Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
North America: Tel: (440) 259 2060. Fax: (440) 259 2059.
Tel: (949) 733 3005. Fax: (949) 733 2986.
These offices are supported by Representatives and Distributors in many countries
world-wide.
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top r ight hand c orner of the fr ont page, to indicate product statu s . The annotations are as
follows:-
Target Information: This is the most tentative form of information and represents a very prel im inary specifi cation. No
actual design work on the product has been sta rted.
Preliminary Information: The product is i n design and development. The datasheet represents the product as it is understood but details may
change.
Advance In for mation: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fix ed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in wri ting) may not be used, applied or re produced for any purpose nor form part of any order or
contract nor to be regarded as a repr es entation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any p roduct or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such inf ormati on and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may resul t in significant injury or death to the user. All products and materials are sol d and services provided
subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade nam es of their respective owners.
