Product Bulletin
The JDS Uniphase EPM 6xx Series PIN
photodiodes are designed for optical network
monitoring applications. The photodiode die is
fabricated with a proprietary InGaAs process in
our wafer fab and assembled into an hermetically-
sealed package with antireflective-coated lens. A
stainless steel bushing is used to actively couple the
fiber to the package.
The fiber is reinforced with a rubber boot, which
relieves fiber bending stresses. EPM 6xx Series
photodiodes can be produced with or without a
variety of industry standard connectors. They are
also available with mounting brackets, allowing
both vertical panel and horizontal flush-to-board
mounting.
Low leakage versions (EPM 605LL and EPM
606LL) of the EPM 605 and EPM 606 are available
with the same features, connectors, and brackets.
Key Features
Electro-optical
•Low back reflection
•High responsivity in L-band at
1625 nm (EPM 606)
Packaging
•Single mode 900 µm fiber with or without a
connector
•Single mode 250 µm fiber without a connector
Applications
•C- and L-Band monitoring
•High sensitivity monitoring
•EDFA and DWDM
•40 and 10 Gb/s line monitoring
•980 forward pump
•1310 and 1550 PONs
C-Band, L-Band, Pass Band
Low Leakage
PIN Photodiodes
EPM 6xx Series
EPM 6xx Series PIN Photodiodes | 2
Optical Response Nonlinearity
Typical, -5V bias
Input Optical Power (mW)
Nonlinearity (%)
-10%
-8%
-6%
-4%
-2%
0%
2%
4%
6%
0.01 0.1 1 10 100
1.4
024681012
Capacitance vs. Reverse Bias
23˚C
Rev erse V oltage (V)
Capacitance (pF)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Dark Current vs. Reverse Bias
Rev erse V oltage (V)
Dark Current (A)
1E-07
1E-08
1E-09
1E-10
1E-11 0 5 10 15 20 25
85˚C
65˚C
45˚C
25˚C
0.0
0.2
0.4
0.6
0.8
1.0
Typical Spectral Response
23 ˚C
Wavelength (nm)
800 1000 1200 1400 1600 1800
Responsivity (A/W)
Dark Current vs. Reverse Bias
Capacitance vs. Reverse Bias (23°C)
Typical Spectral Response (23°C)
(EPM 605/606)
Optical Response Nonlinearity (Typical, -5V bias)
Application/Product EPM 605 EPM 605LL EPM 606 EPM 606LL EPM 613 EPM 650
C-Band •• •• • • •
C-Band, High Sensitivity •• •
L-Band •• ••
L-Band, Low Sensitivity ••
1310 Band • • •• ••
EDFA •• •• •• •• •
DWDM •• •• •• •• •
40 Gb and 10 Gb Line Monitors •• •• •• •• •
980 Forward Pump ••••••
1310/1550 PON Networks •••••••
1480 Pump Monitors •••• •
Application Preference
•• Strong Preference • Preference
EPM 6xx Series PIN Photodiodes | 3
Responsivity vs. (Wavelength, Temperature)
Wavelength (nm)
Responsivity (A/W)
0.92
1525 1530 1535 15601540 1545 1550 1555 1565
0.93
0.94
0.95
0.96
0.97
0.98
0.99
1
65˚C
23˚C
15˚C
PDL vs. (Wavelength, Temperature)
Wavelength (nm)
PDL (dB)
0.06
1535 1540 15601545 1550 1555 1565
0.065
0.07
0.075
0.08
0.085
0.09
0.095
0.1
65˚C
23˚C
15˚C
0Temperature (˚C)
Responsivity (A/W)
20 40 60 80
0.2
0.4
0.6
0.8
1
1.2
-20-40
Responsivity vs. Temperature
λ = 1620 nm, Vb = -5V, Pin = 0.5 mW
Sample 1
Sample 2
Sample 3
Sample 4
20
Temperature (˚C)
PDL (mdB)
30 40 50 60
0
0.02
0.04
0.06
0.08
0.1
100
PDL vs. Temperature
70
λ = 1620 nm
Sample 1
Sample 2
PDL vs. Wavelength, Temperature
Responsivity vs. Temperature
Responsivity vs. Wavelength, Temperature
PDL vs. Temperature
(EPM 606) (EPM 606)
(EPM 605) (EPM 605)
20
Temperature (˚C)
Responsivity (A/W)
30 40 50 60
0.5
0.54
0.58
0.62
0.66
0.7
100
Responsivity vs. Temperature
70 80 90
Power = 1 mW
Bias = -5V
λ = 980 nm
EPM 613 Device 1
EPM 613 Device 2
EPM 613 Device 3
30
Temperature (˚C)
PDL (dB)
35 40 45 50
0.02
0.04
0.06
0.08
0.1
0.12
2520
PDL vs. Temperature
55 60 65
λ = 980 nm
EPM 613
EPM 613
PDL vs. Temperature Responsivity vs. Temperature
(EPM 613) (EPM 613)
Optical Power Linearity
Optical Power (mW)
Responsivity (A/W)
02 10468 14
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
12
λ
op
= 1550 nm
Bias = -5.0V
Bias = -3.3V
Bias = 0.0V
Responsivity = 1.02 A/W
Optical Power Linearity
Optical Power (mW)
Responsivity (A/W)
02 10468 14
0.70
0.74
0.78
0.82
0.86
0.90
0.94
0.98
12 16 18 20
Bias = -5.0V
Bias = -3.3V
Bias = 0.0V
Responsivity = 1.02 A/W
1.02
1.06
1.10
λ
op
= 1550 nm
Optical Power Linearity
Optical Power Linearity
(EPM 605) (EPM 650)
Equivalent Circuit for EPM 6xx Series
C
p
0.13 pF
1 nH
1.5 nH
R
s
5 nH
5 nH
0.50 pF
0.50 pF
CASE
Rs Cp
EPM 605 5 Ω0.55 pF
EPM 606 5 Ω0.55 pF
EPM 613 5 Ω0.75 pF
EPM 650 6 Ω1.00 pF
EPM 6xx Series PIN Photodiodes | 4
0Temperature (˚C)
Responsivity (A/W)
20 40 60 80
0.8
0.84
0.88
0.92
0.96
1
-20-40
Responsivity vs. Temperature
λ = 1550 nm, Vb = -5V, Pin = 0.5 mW
Sample 5
Sample 6
Sample 7
PDL vs. Temperature
Temperature (˚C)
PDL (dB)
020 25 4530 35 40 55
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
50 60 65 70
EPM 605 (1310 nm)
EPM 605 (1310 nm)
EPM 605 (1550 nm)
EPM 605 (1550 nm)
λ = 1550 nm
λ = 1310 nm
PDL vs. Temperature Responsivity vs. Temperature
(EPM 605) (EPM 605)
Dimensions Diagrams (Specifications in mm unless otherwise noted.)
EPM 6xx with Dual Mount Bracket EPM 6xx without Dual Mount Bracket
EPM 6xx Series PIN Photodiodes | 5
EPM 6xx Series PIN Photodiodes | 6
Specifications (Temperature = 25°C, VR = 5V unless noted otherwise. All specifications without connector.)
EPM 605 EPM 606 EPM 613 EPM 650
Parameter Min Typ Max Min Typ Max Min Typ Max Min Typ Max Units
Active Diameter 75 75 75 100 µm
Responsivity
λ = 980 nm 0.30 A/W
λ = 1310 nm 0.80 0.85 0.80 A/W
λ = 1550 nm 0.85 0.85 0.0004 0.85 A/W
λ = 1625 nm 0.80 A/W
Back Reflection
λ = 980 nm -30 dB
λ = 1310 nm -40 -40 dB
λ = 1550 nm -40 dB
λ = 1625 nm -40 dB
Dark Current
Standard Leakage 0.6 0.6 1.0 1.0 nA
Low Leakage 0.08 0.08 nA
Capacitance10.75 0.75 0.9 1.25 pF
Bandwidth22.0 2.0 1.5 1.5 GHz
PDL
λ = 980 nm 0.2 dB
λ = 1310 nm 0.1 0.1 dB
λ = 1550 nm 0.1 0.1 dB
λ = 1625 nm 0.1 dB
Isolation Between Bands
1310 and 1550 nm 33 dB
980 and 1550 nm 29 dB
1. Measured with case grounded.
2. -3 dB point into a 50 Ω load.
Maximum Ratings
Parameter Min Typ Max Units
Forward CurrentA10 mA
Reverse CurrentB10 mA
Reverse Voltage 25 V
Power Dissipation 100 mW
Operating Case Temperature -40 85 °C
Soldering Temperature 250 °C
Storage Temperature -40 85 °C
A. Under forward bias, current at which device may be damaged.
B. Under reverse bias, current at which device may be damaged.
All statements, technical information and recommendations related to the products herein are based upon information be-
lieved to be reliable or accurate. However, the accuracy or completeness thereof is not guaranteed, and no responsibility is
assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its
application. JDS Uniphase reserves the right to change at any time without notice the design, specifications, function, fit or
form of its products described herein, including withdrawal at any time of a product offered for sale herein. JDS Uniphase
makes no representations that the products herein are free from any intellectual property claims of others. Please contact JDS
Uniphase for more information. JDS Uniphase and the JDS Uniphase logo are trademarks of JDS Uniphase Corporation. Other
trademarks are the property of their respective holders. Copyright JDS Uniphase Corporation. All rights reserved.
10143020 Rev. 001 01/04
North America toll-free: 1-800-498-JDSU (5378)
Worldwide toll-free: +800-5378-JDSU
www.jdsu.com
Ordering Information
For more information on this or other products and their availability, please contact your local JDS Uniphase account manager
or JDS Uniphase directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide or via e-mail at
sales@jdsu.com.
EPM 6xx Series PIN Photodiodes | 7
Precautions for Use
Electrostatic discharge protection is imperative. Use of grounding straps, anti-static mats, and other standard ESD protective
equipment is required when handling or testing an InGaAs PIN or any other junction photodiode. The flexible 250 µm fiber
coating can be mechanically stripped and provides protection for the optical fiber, under normal handling characteristics.
Soldering temperature of the leads should not exceed 260 oC for more than 10 seconds. Fiber pigtails should be handled
with less than 10 N pull and with a bending radius greater than 1 inch.
+
code model
05 Low back reflection, C-Band PIN Photodiode
05LL Low back reflection, low leakage, C-Band PIN Photodiode
06 Low back reflection, L-Band PIN Photodiode
06LL Low back reflection, low leakage, L-Band PIN Photodiode
13 Low back reflection, Pass-Band PIN Photodiode
50 General purpose, high responsivity PIN Photodiode
Sample: EPM 606LL 250 FCS DMB
EPM 6 + + +
code buffer
250 250 µm buffer
900 900 µm buffer
code connector
NC No connector
FCS FC/SPC connector
SCS SC/SPC connector
code bracket
0 No bracket
DMB with Dual Mount Bracket
