© 2008 IXYS CORPORATION, All rights reserved DS100094(12/08)
IXFH110N15T2
TrenchT2TM HiperFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Preliminary Technical Information
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 150 V
VDGR TJ= 25°C to 175°C, RGS = 1MΩ150 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C 110 A
IDM TC= 25°C, pulse width limited by TJM 300 A
IATC= 25°C55 A
EAS TC= 25°C 800 mJ
dV/dt IS≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C 15 V/ns
PDTC= 25°C 480 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6mm (0.062in.) from case for 10s 300 °C
Tsold Plastic body for 10 seconds 260 °C
Weight 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 150 V
VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V
IGSS VGS = ± 20V, VDS = 0V ±200 nA
IDSS VDS = VDSS 25 μA
VGS = 0V TJ = 150°C 500 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 13 mΩ
VDSS = 150V
ID25 = 110A
RDS(on) ≤≤
≤≤
≤ 13mΩΩ
ΩΩ
Ω
G = Gate D = Drain
S = Source TAB = Drain
TO-247
GDS
(TAB)
Features
zInternational standard package
z175°C Operating Temperature
zHigh current handling capability
zFast intrinsic Rectifier
zDynamic dV/dt rated
zLow RDS(on)
Advantages
zEasy to mount
zSpace savings
zHigh power density
Applications
zDC-DC converters
zBattery chargers
zSwitched-mode and resonant-mode
power supplies
zDC choppers
zAC motor drives
zUninterruptible power supplies
zHigh speed power switching
applications
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH110N15T2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
e
∅ P
TO-247 (IXFH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 75 115 S
Ciss 8600 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 685 pF
Crss 77 pF
td(on) 33 ns
tr 16 ns
td(off) 33 ns
tf 18 ns
Qg(on) 150 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 42 nC
Qgd 46 nC
RthJC 0.31 °C/W
RthCH 0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
IS VGS = 0V 110 A
ISM Repetitive, Pulse width limited by TJM 440 A
VSD IF = 100A, VGS = 0V, Note 1 1.3 V
trr 85 ns
IRM 6.8 A
QRM 290 nC
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
IF = 55A, VGS = 0V
-di/dt = 100A/μs
VR = 75V
© 2008 IXYS CORPORATION, All rights reserved
IXFH110N15T2
Fig. 1. Output Characteristics
@ 25º C
0
10
20
30
40
50
60
70
80
90
100
110
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VDS - Volts
ID - Amperes
V
GS
= 15V
10V
9V
8V
7V
5V
6V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
50
100
150
200
250
300
350
0246810121416
VDS - Volts
ID - Amperes
V
GS
= 15V
10V
8V
6V
7V
Fig. 3. Output Characteristics
@ 150ºC
0
10
20
30
40
50
60
70
80
90
100
110
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
VDS - Volts
ID - Amperes
V
GS
= 15V
10V
9V
8V
7
V
6
V
Fig. 4. R
DS(on)
Normalized to I
D
= 55A Val u e
vs. Ju nctio n Temp er ature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
RDS(on) - Normalized
V
GS
= 10V
I
D
= 110A
I
D
= 55A
Fig. 5. R
DS(on)
Normalized to I
D
= 55A Value
vs. Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 50 100 150 200 250 300
ID - Amperes
RDS(on) - Normalized
V
GS
= 10V
15V - - - - T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Tem perature
0
10
20
30
40
50
60
70
80
90
100
110
120
-50 -25 0 25 50 75 100 125 150 175
TC - Degrees Centigrade
ID - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH110N15T2
IXYS REF: F_110N15T2(61)12-17-08
Fig. 7. Input Adm ittance
0
20
40
60
80
100
120
140
160
3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 6.6
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
180
0 20 40 60 80 100 120 140 160
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forward Voltage Drop of
In tr i n sic Di o d e
0
50
100
150
200
250
300
350
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 75V
I
D
= 55A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1.0
10.0
100.0
1,000.0
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
25µs
100µs
1ms
10ms
100ms
R
DS(on)
Limit
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
© 2008 IXYS CORPORATION, All rights reserved
IXFH110N15T2
Fi g. 14. R esi stive Tu rn -o n
Ri se Time vs. D rai n Cu r r ent
14
15
16
17
18
19
20
55 60 65 70 75 80 85 90 95 100 105 110
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 3.3
V
GS
= 10V
V
DS
= 75V
T
J
= 25ºC
T
J
= 125ºC
Fi g. 15. R esi stive Tu rn -o n
Switc h i n g Ti mes vs . Gate R esi s tan ce
0
40
80
120
160
200
240
280
2 4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
r
- Nanoseconds
20
30
40
50
60
70
80
90
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 75V
I
D
= 55A
I
D
= 110A
Fig. 16. Resistive Tur n-off
Switching T imes vs. Junction Temperature
16
18
20
22
24
26
28
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
20
30
40
50
60
70
80
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3, V
GS
= 10V
V
DS
= 75V
I
D
= 55A, 110A
Fi g . 17. Res i sti ve Tur n - o ff
Switching T imes vs. Drain Current
17
18
19
20
21
22
23
55 60 65 70 75 80 85 90 95 100 105 110
I
D
- Amperes
t
f
- Nanoseconds
20
30
40
50
60
70
80
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3, V
GS
= 10V
V
DS
= 75V
T
J
= 125ºC
T
J
= 25ºC
Fi g. 13. R esi stive Tu r n-o n
Ri se Ti me vs. Ju n cti on Temper a tu r e
12
13
14
15
16
17
18
19
20
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3.3
V
GS
= 10V
V
DS
= 75V
I
D
= 110A
I
D
= 55A
Fig. 18. Resistive Tur n-off
Switchi n g Times vs. Gate Resi stance
0
20
40
60
80
100
120
2 4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
f
- Nanoseconds
10
50
90
130
170
210
250
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 75V
I
D
= 110A
I
D
= 55A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH110N15T2
IXYS REF: F_110N15T2(61)12-17-08
Fi g . 19. Maximu m Tran si ent Th er mal I mpedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
