BS170 Small Signal MOSFET 500 mA, 60 Volts N-Channel TO-92 (TO-226) Features www.onsemi.com * This is a Pb-Free Device* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Rating Drain -Source Voltage Gate-Source Voltage - Continuous - Non-repetitive (tp 50 ms) Symbol Value Unit VDS 60 Vdc N-Channel VGS VGSM 20 40 Vdc Vpk Drain Current (Note) ID 0.5 Adc Total Device Dissipation @ TA = 25C PD 350 mW TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range D G S Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: The Power Dissipation of the package may result in a lower continuous drain current. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TO-92 (TO-226) CASE 29 STYLE 30 12 3 MARKING DIAGRAM & PIN ASSIGNMENT BS170 AYWWG G 1 Drain 2 Gate 3 Source A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2011 November, 2017 - Rev. 7 1 Publication Order Number: BS170/D BS170 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS - 0.01 10 nAdc V(BR)DSS 60 90 - Vdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(Th) 0.8 2.0 3.0 Vdc Static Drain-Source On Resistance (VGS = 10 Vdc, ID = 200 mAdc) rDS(on) - 1.8 5.0 W ID(off) - - 0.5 mA gfs - 200 - mmhos Ciss - - 60 pF Turn-On Time (ID = 0.2 Adc) See Figure 1 ton - 4.0 10 ns Turn-Off Time (ID = 0.2 Adc) See Figure 1 toff - 4.0 10 ns OFF CHARACTERISTICS Gate Reverse Current (VGS = 15 Vdc, VDS = 0) Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mAdc) ON CHARACTERISTICS (Note 1) Drain Cutoff Current (VDS = 25 Vdc, VGS = 0 Vdc) Forward Transconductance (VDS = 10 Vdc, ID = 250 mAdc) SMALL- SIGNAL CHARACTERISTICS Input Capacitance (VDS = 10 Vdc, VGS = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Package Shipping BS170 TO-92 (TO-226) (Pb-Free) 1000 Unit/Tube BS170RLRAG TO-92 (TO-226) (Pb-Free) 2000 Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 BS170 RESISTIVE SWITCHING +25 V ton Vin PULSE GENERATOR 50 W 125 W 20 dB 50 W ATTENUATOR 40 pF 50 W TO SAMPLING SCOPE 50 W INPUT Vout toff 90% 10% OUTPUT V INVERTED out 1.0 MW 90% 50% 10% INPUT Vin (Vin Amplitude 10 Volts) Figure 2. Switching Waveforms Figure 1. Switching Test Circuit 2.0 2.0 VGS = 10 V VDS = VGS ID = 1.0 mA 1.6 I D(on) , DRAIN CURRENT (AMPS) VGS(th), THRESHOLD VOLTAGE PULSE WIDTH 1.2 0.8 0.4 1.6 9.0 V 8.0 V 1.2 7.0 V 6.0 V 0.8 5.0 V 0.4 4.0 V 0 50 100 0 50 TJ, JUNCTION TEMPERATURE (C) 150 0 Figure 3. VGS(th) Normalized versus Temperature 100 VGS = 10 V 9.0 V 1.6 VGS = 0 V 80 8.0 V 1.2 7.0 V 0.8 6.0 V 0.4 4.0 Figure 4. On-Region Characteristics C, CAPACITANCE (pF) I D(on) , DRAIN CURRENT (AMPS) 2.0 1.0 2.0 3.0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 60 40 Ciss 20 5.0 V Coss 4.0 V Crss 0 20 10 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 40 0 Figure 5. Output Characteristics 10 20 30 40 50 60 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6. Capacitance versus Drain-To-Source Voltage www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-92 (TO-226) 1 WATT CASE 29-10 ISSUE A SCALE 1:1 1 12 3 STRAIGHT LEAD DATE 08 MAY 2012 2 3 BENT LEAD A STRAIGHT LEAD B R P L F K D X X G J H V C SECTION X-X N 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DI MENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --3.43 --- A BENT LEAD R B P T SEATING PLANE G K D X X J V 1 C N SECTION X-X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DIMENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.094 0.102 0.018 0.024 0.500 --0.080 0.105 --0.100 0.135 --0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 2.40 2.80 0.46 0.61 12.70 --2.04 2.66 --2.54 3.43 --3.43 --- STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98AON52857E TO-92 (TO-226) 1 WATT Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2019 www.onsemi.com TO-92 (TO-226) 1 WATT CASE 29-10 ISSUE A DATE 08 MAY 2012 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 2: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 6: PIN 1. GATE 2. SOURCE & SUBSTRATE 3. DRAIN STYLE 7: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 8: PIN 1. DRAIN 2. GATE 3. SOURCE & SUBSTRATE STYLE 9: PIN 1. BASE 1 2. EMITTER 3. BASE 2 STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 11: PIN 1. ANODE 2. CATHODE & ANODE 3. CATHODE STYLE 12: PIN 1. MAIN TERMINAL 1 2. GATE 3. MAIN TERMINAL 2 STYLE 13: PIN 1. ANODE 1 2. GATE 3. CATHODE 2 STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 15: PIN 1. ANODE 1 2. CATHODE 3. ANODE 2 STYLE 16: PIN 1. ANODE 2. GATE 3. CATHODE STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER STYLE 18: PIN 1. ANODE 2. CATHODE 3. NOT CONNECTED STYLE 19: PIN 1. GATE 2. ANODE 3. CATHODE STYLE 20: PIN 1. NOT CONNECTED 2. CATHODE 3. ANODE STYLE 21: PIN 1. COLLECTOR 2. EMITTER 3. BASE STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN STYLE 23: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 24: PIN 1. EMITTER 2. COLLECTOR/ANODE 3. CATHODE STYLE 25: PIN 1. MT 1 2. GATE 3. MT 2 STYLE 26: PIN 1. 2. 3. STYLE 27: PIN 1. MT 2. SUBSTRATE 3. MT STYLE 28: PIN 1. CATHODE 2. ANODE 3. GATE STYLE 29: PIN 1. NOT CONNECTED 2. ANODE 3. CATHODE STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE STYLE 32: PIN 1. BASE 2. COLLECTOR 3. EMITTER STYLE 33: PIN 1. RETURN 2. INPUT 3. OUTPUT STYLE 34: PIN 1. INPUT 2. GROUND 3. LOGIC STYLE 35: PIN 1. GATE 2. COLLECTOR 3. EMITTER VCC GROUND 2 OUTPUT STYLE 31: PIN 1. GATE 2. DRAIN 3. SOURCE DOCUMENT NUMBER: DESCRIPTION: 98AON52857E TO-92 (TO-226) 1 WATT Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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