TPCP8504
2006-11-13
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
TPCP8504
High Speed Switching Applications
DC-DC Converter Applications
• High DC current gain : hFE = 400 to 1000 (IC = 0.2 A)
• Low collector-emitter saturation : VCE (sat) = 0.12 V (max)
• High-speed switching : tf = 25 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 10 V
Emitter-base voltage VEBO 7 V
DC (Note 1) IC 2.0
Collector current
Pulse (Note 1 ) ICP 3.5
A
Base current IB 0.2 A
t = 10s 2.8
Collector power
dissipation (Note 2) DC
PC
1.2
W
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Note 1: Please use devices on condition that the junction temperature is below 150°C.
Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3V1A
Weight: 0.017 g (typ.)
0.33±0.05
0.28
+0.1
-0.11
1.12
+0.13
-0.12
2.4±0.1
0.475
0.65
2.8±0.1
A
0.05
M
2.9±0.1
41
5
8
0.8±0.05
0.17±0.02
BB
0.05
M
A
S
0.025
S
1.12
+0.13
-0.12
0.28
+0.1
-0.11
1.Collector
2.Collector
3.Collector
4.Base
5.Emitter
6.Collector
7.Collector
8.Collector
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TPCP8504
2006-11-13
2
Figure 1. Circuit configuration
(top view) Figure 2. Marking
(Note 4)
Note 4: ● on lower left on the marking indicates Pin 1.
※ Weekly code: (Three digits)
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 20 V, IE = 0 ⎯ ⎯ 100 nA
Emitter cut-off current IEBO V
EB = 7 V, IC = 0 ⎯ ⎯ 100 nA
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 10 ⎯ ⎯ V
hFE (1) VCE = 2 V, IC = 0.2 A 400 ⎯ 1000
DC current gain
hFE (2) VCE = 2 V, IC = 0.6 A 200 ⎯ ⎯
Collector-emitter saturation voltage VCE (sat) I
C = 0.6 A, IB = 12 mA ⎯ ⎯ 0.12 V
Base-emitter saturation voltage VBE (sat) I
C = 0.6 A, IB = 12 mA ⎯ ⎯ 1.1 V
Collector output capacitance Cob V
CB = 10 V, IE = 0, f = 1MHz ⎯ 10 ⎯ pF
Rise time tr ⎯ 60 ⎯
Storage time tstg ⎯ 215 ⎯
Switching time
Fall time tf
See Figure 3 circuit diagram
VCC
∼
−
6 V, RL = 10 Ω
IB1 = −IB2 = 12 mA
⎯ 25 ⎯
ns
Figure 3. Switching Time Test Circuit & Timing Chart
IB1
20
μ
s
IB2 IB1
IB2
Input
Output
RL
VCC
Duty cycle ＜1%
1 2 3 4
8 7 6 5
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
Type
Lot No.
(Weekly code)
8504
8 7 6 5
1 2 3 4
※
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TPCP8504
2006-11-13
3
0.001 1
10
10000
100
0.01 0.1
Ta = 100°C
−55
25
0.001
0.1
10
10
1
0.01 0.1
Ta = −55°C
100°C
25°C
0.001
0.001
1
1
0.1
0.01 0.1
Ta = 100°C
−55°C
25°C
0
0
1.2 1.6
1.6
2.0
−55
Ta = 100°C 25
Collector current IC (A)
Base-emitter saturation voltage
VBE (sat) (V)
Collector−emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Collector current IC (A)
hFE – IC
DC current gain hFE
Collector current IC (A)
VCE (sat) – IC
Collector−emitter saturation voltage
VCE (sat) (V)
Collector current IC (A)
VBE (sat) – IC
Base−emitter voltage VBE (V)
IC – VBE
0
0
0.4 0.8 1.0 1.2
0.4
2.0
2.4
Common emitter
Ta = 25°C
Single nonrepetitive pulse
8
6
40
IB = 2 mA
20 10
30
4
1.6
0.8
0.60.2
0.4
1.2
0.8
0.4 0.8
Common emitter
VCE = 2 V
Single nonrepetitive pulse
Common emitter
β = 50
Single nonrepetitive pulse
Common emitter
β = 50
Single nonrepetitive pulse
Common emitter
VCE = 2 V
Single nonrepetitive pulse
10
10 1
Ambient temperature Ta (°C)
Pc – Ta
Collector power dissipation PC (W)
0.2
1.4
0 160
0.4
0.8
1.0
20 80 100
0
40 120 60 140
0.6
1.2
DC operation Ta = 25 °C
Mounted on an FR4 board
glass epoxy, 1.6 mm thick,
Cu area: 645 mm2)
60
1.2
1000
0.01
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TPCP8504
2006-11-13
4
Transient thermal resistance
rth(j-a) (°C/W)
rth – tw
Pulse width tw (s)
1000
1
0.001 1000
0.01 0.1 10 100
10
100
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
*: Single nonrepetitive pulse
Ta = 25°C
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm2).
These characteristic curves must
be derated linearly with increase
in temperature.
1 ms*
10 ms* 100 μs*
IC max (Pulsed)*
DC operation
Ta = 25°C
IC max (Continuous)
10 s*
100 ms*
VCEO max
1
Collector−emitter voltage VCE (V)
Safe operating area
0.01
0.1
0.1
1
10
1 10 100
Collector current IC (A)
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TPCP8504
2006-11-13
5
RESTRICTIONS ON PRODUCT USE
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in this document, and related hardware, software and systems (collectively “Product”) without notice.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
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LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
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