5STB17N5200 - Abb Switzerland Ltd. Semiconductors

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

V

D

M

=

5200

V

I

T(AV)M

=

1800

A

I

T(RMS)

=

2830

A

I

TSM

=

29×10

3

A

V

T0

=

1.02

V

r

T

=

0.32

m

Ω

Bi-Directional Control Thyristor

5STB 17N5200

Doc. No. 5SYA1036-04 May 07

• Two thyristors integrated into one wafer

• Patented free-floating silicon technology

• Designed for energy management and industrial applications

• Optimum power handling capability

• Interdigitated amplifying gate

The electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated)

Blocking

Maximum rated values 1)

Parameter Symbol

Conditions 5STB 17N5200 Unit

Max. surge peak forward

blocking voltage VSM tp = 10 ms, f = 5 Hz

Tvj = 5…125°C, Note 1 5200 V

Max repetitive peak forward

blocking voltage

VRM 5200 V

Max crest working forward

voltages VWM

f = 50 Hz, tp = 10 ms, tp1 = 250 µs,

Tvj = 5…125°C, Note 1

2600 V

Critical rate of rise of off-

state voltage dv/dtcrit Exp. to 2950 V, Tvj = 125°C 2000 V/µs

Characteristic values

Parameter Symbol

Conditions min typ max Unit

Max reverse leakage

current IRM VRM, Tvj = 125 °C 400 mA

Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below +5 °C

Note 2: Recommended minimum ratio of VDRM / VDWM or VRRM / VRWM = 2. See App. Note 5SYA 2051.

Mechanical data

Maximum rated values 1)

Parameter Symbol

Conditions min typ max Unit

Mounting force FM 81 90 108 kN

Acceleration a Device unclamped 50 m/s2

Acceleration a Device clamped 100 m/s2

Characteristic values

Parameter Symbol

Conditions min typ max Unit

Weight m 2.9 kg

Housing thickness H FM = 90 kN, Ta = 25 °C 34.8 35.4 mm

Surface creepage distance D

S 53 mm

Air strike distance Da 22 mm

1) Maximum rated values indicate limits beyond which damage to the device may occur

5STB 17N5200

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1036-04 May 07 page 2 of 7

On-state

Maximum rated values 1)

Parameter Symbol

Conditions min typ max Unit

Average on-state current IT(AV)M Half sine wave, Tc = 70 °C 1800 A

RMS on-state current IT(RMS) 2830 A

RMS on-state current IT(RMS) Full sine wave, Tc = 70 °C 4000 A

Peak non-repetitive surge

current ITSM 29.0×103

A

Limiting load integral I2t

tp = 10 ms, Tvj = 125 °C, sine wave

after surge: VD = VR= 0 V 4.21×106

A2s

Peak non-repetitive surge

current ITSM 31.0×103

A

Limiting load integral I2t

tp = 8.3 ms, Tvj = 125 °C, sine wave

after surge: VD = VR= 0 V 3.99×106

A2s

Characteristic values

Parameter Symbol

Conditions min typ max Unit

On-state voltage VT IT = 2000 A, Tvj = 125 °C 1.68 V

Threshold voltage VT0 1.02 V

Slope resistance rT IT = 1000 A - 3000 A, Tvj= 125 °C 0.32 mΩ

Holding current IH Tvj = 25 °C 50 250 mA

Tvj = 125 °C 150 mA

Latching current IL Tvj = 25 °C 500 mA

Tvj = 125 °C 300 mA

Switching

Maximum rated values 1)

Parameter Symbol

Conditions min typ max Unit

Critical rate of rise of on-

state current di/dtcrit Cont.

f = 50 Hz

250 A/µs

Critical rate of rise of on-

state current di/dtcrit

Tvj = 125 °C,

ITRM = 3000 A,

VD ≤ 2950 V,

IFG = 2 A, tr = 0.5 µs Cont.

f = 1Hz 500 A/µs

Circuit commutated turn-off

time tq Tvj = 125 °C, ITRM = 2000 A,

VR = 200 V, diT/dt = -1.5 A/µs,

VD ≤ 0.67⋅VRM, dvD/dt = 20 V/µs,

700 µs

Critical rate of rise of

commutating voltage dv/dtcom Tvj = 125 °C, VR ≤ 0.67⋅VRM 500 V/µs

Characteristic values

Parameter Symbol

Conditions min typ max Unit

Reverse recovery charge Qrr 3500 6500 µAs

Reverse recovery current IRM Tvj = 125 °C, ITRM = 2000 A,

VR = 200 V, diT/dt = -1.5 A/µs 65 90 A

Gate turn-on delay time tgd Tvj = 25 °C, VD = 0.4⋅VRM, IFG = 2 A,

tr = 0.5 µs 3 µs

5STB 17N5200

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1036-04 May 07 page 3 of 7

Triggering

Maximum rated values 1)

Parameter Symbol

Conditions min typ max Unit

Peak forward gate voltage V

FGM 12 V

Max. rated peak forward

gate current IFGM 10 A

Peak reverse gate voltage V

RGM 10 V

Max. rated gate power loss P

G

For DC gate current 3 W

Max. rated peak forward

gate power PGM(AV) see Fig. 9 W

Characteristic values

Parameter Symbol

Conditions min typ max Unit

Gate trigger voltage VGT Tvj = 25 °C 2.6 V

Gate trigger current IGT Tvj = 25 °C 400 mA

Gate non-trigger voltage VGD VD = 0.4 x VRM, Tvj = 125 °C 0.3 V

Gate non-trigger current IGD VD = 0.4 x VRM 10 mA

Thermal

Maximum rated values 1)

Parameter Symbol

Conditions min typ max Unit

Operating junction

temperature range Tvj 125 °C

Storage temperature range T

stg -40 140 °C

Characteristic values

Parameter Symbol

Conditions min typ max Unit

Rth(j-c) Double-side cooled

Fm = 81...108 kN 11.4 K/kW Thermal resistance junction

to case

(Valid for one thyristor half

no heat flow to the second

half.)

Rth(j-c) Single-side cooled

Fm = 81...108 kN 22.8 K/kW

Thermal resistance case to

heatsink Rth(c-h) Double-side cooled

Fm = 81...108 kN 2 K/kW

Rth(c-h) Single-side cooled

Fm = 81...108 kN 4 K/kW

Analytical function for transient thermal

impedance:

)e-(1R = (t)Z n

1i

t/-

i c)-th(j ∑

=

i

τ

i 1 2 3 4

Ri(K/kW) 6.770 2.510 1.340 0.780

τi(s) 0.8651 0.1558 0.0212 0.0075

Fig. 1 Transient thermal impedance (junction-to-

case) vs. time

5STB 17N5200

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1036-04 May 07 page 4 of 7

On-state characteristic model:

T

ID

T

IC

T

IBA

T

V

⋅++⋅+⋅+= )1ln(

max

Valid for iT = 500 – 4000 A

A B C D

1.309 80.0×10-6 -125.0×10-3

26.0×10-3

Fig. 2 On-state characteristics,

Tj = 125°C, 10ms half sine Fig. 3 On-state voltage characteristics

050010001500200025003

0

I

T

A

V

(

A

)

70

75

80

85

90

95

100

105

110

115

120

125

130

T

case

(

°

C

)

D

C

1

8

0

°

r

e

c

t

a

n

g

u

l

a

r

1

8

0

°

s

i

n

e

1

2

0

°

r

e

c

t

a

n

g

u

l

a

r

5STB

17N5200

Double-s

i

d

e

d

c

o

l

i

n

g

Fig. 4 On-state power dissipation vs. mean on-state

current. Turn-on losses excluded. Fig. 5 Max. permissible case temperature vs. mean

on-state current. Switching losses ignored.

5STB 17N5200

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1036-04 May 07 page 5 of 7

Fig. 6 Surge on-state current vs. pulse length.

Half-sine wave. Fig. 7 Surge on-state current vs. number of pulses.

Half-sine wave, 10 ms, 50Hz.

IGM

IGon

100 %

90 %

10 %

IGM ≈ 2..5 A

IGon ≥ 1.5 IGT

diG/dt ≥ 2 A/µs

tr≤ 1 µs

tp(IGM)≈ 5...20 µs

diG/dt

tr

tp (IGM)

IG (t)

t

tp (IGon)

Fig. 8 Recommended gate current waveform Fig. 9 Max. peak gate power loss

Fig. 10 Reverse recovery charge vs. decay rate of

on-state current Fig. 11 Peak reverse recovery current vs. decay rate

of on-state current

5STB 17N5200

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1036-04 May 07 page 6 of 7

Turn-on and Turn-off losses

Fig. 12 Turn-on energy, half sinusoidal waves Fig. 13 Turn-on energy, rectangular waves

Fig. 14 Turn-off energy, half sinusoidal waves Fig. 15 Turn-off energy, rectangular waves

Qrr

IT(t), V(t)

t

-diT/dt

IT(t)

-V0

-VRM

V(t)

-IRM

dv/dtcom

Total power loss for repetitive waveforms:

fWfWPP offonTTOT ⋅+⋅+=

where

dtIVI

T

PT

TTTT ∫⋅= 0)(

1

Fig. 16 Current and voltage waveforms at turn-off Fig. 17 Relationships for power loss

5STB 17N5200

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

ABB Switzerland Ltd Doc. No. 5SYA1036-04 May 07

Semiconductors

Fabrikstrasse 3

CH-5600 Lenzburg, Switzerland

Telephone +41 (0)58 586 1419

Fax +41 (0)58 586 1306

Email abbsem@ch.abb.com

Internet www.abb.com/semiconductors

g

Fig. 18 Device Outline Drawing