2N3766, 2N3767 NPN Power Silicon Transistor Rev. V4 Features * Available in JAN, JANTX, JANTXV per MIL-PRF19500/518 * TO-66 Package * Designed for High Speed Switching and High Voltage Amplifier Applications Electrical Characteristics (25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage IC = 100 mA dc, 2N3766 IC = 100 mA dc, 2N3767 V(BR)CEO V dc 60 80 -- Collector - Base Cutoff Current VCB = 80 Vdc 2N3766 VCB = 100 V dc 2N3767 ICBO A dc -- 10 10 Collector - Emitter Cutoff Current VCE = 60 V dc 2N3766 VCE = 80 V dc 2N3767 ICEO A dc -- 500 Collector - Emitter Cutoff Current VCE = 80 V dc, VBE = 1.5 Vdc, 2N3766 VCE = 100 Vdc, VBE = 1.5 Vdc, 2N3767 ICEX1 A dc -- 10 10 Collector - Emitter Cutoff Current TA = +150oC VBE = 1.5 V dc VCE = 50 V dc, 2N3766 VCE = 70 V dc, 2N3767 ICEX2 mA dc -- 1.0 1.0 Emitter - Base Cutoff Current VEB = 6 V dc IEBO A dc -- 500 Forward Current Transfer Ratio VCE = 5 V dc, IC = 50 mA dc VCE = 5 V dc, IC = 500 mA dc VCE = 10 V dc, IC = 1 A dc hFE1 hFE2 hFE3 - 30 40 20 160 Forward Current Transfer Ratio TA = -55oC VCE = 5.0 V dc, IC = 0.5 A dc hFE4 - 13 Base - Emitter Voltage (non-saturated) VCE = 10 V dc, IC = 1.0 A dc VBE V dc -- 1.5 Collector - Emitter Voltage (saturated) IC = 1.0 A dc, IB = 0.1 A dc VCE(SAT)1 V dc -- 2.5 Collector - Emitter Voltage (saturated) IC = 0.5 A dc, IB = 0.05 A dc VCE(SAT)2 V dc -- 1.0 Base - Emitter Voltage (saturated) IC = 1.0 A dc, IB = 0.1 A dc VBE(SAT)1 V dc -- 1.5 Off Characteristics On Characteristics 1 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: info@vptcomponents.com 1. 2N3766, 2N3767 NPN Power Silicon Transistor Rev. V4 Dynamic Characteristics Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio VCE = 10 V dc, IC = 500 mA dc, f = 10 MHz | hFE | - 1 8 Open Capacitance (Open Circuit) VCB = 10 V dc, IE = 0, 0.1 MHz f 1 MHz Cobo pF -- 50 Absolute Maximum Ratings (25oC unless otherwise specified) Ratings Symbol Value Collector - Emitter Voltage 2N3766 2N3767 VCEO 60 V dc 80 V dc Collector - Base Voltage 2N3766 2N3767 VCBO 80 V dc 100 V dc Emitter - Base Voltage VEBO 6.0 V dc Base Current IB 2.0 A dc Collector Current IC 4.0 A dc Total Power Dissipation @ TC = +25C1 PT 25 W Junction & Storage Temperature Range TJ, TSTG -65C to +200C 1. Between TC = +25oC and TC = +200oC, linear derating factor (average) = 143m/W oC. Thermal Characteristics Characteristics Symbol Max. Value Thermal Resistance, Junction to Case RJC 7.0oC/W 2 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: info@vptcomponents.com 2N3766, 2N3767 NPN Power Silicon Transistor Rev. V4 Electrical Characteristics (25oC unless otherwise specified) Pulse Response Test Conditions Symbol Units Min. Max. Turn-On Time VCC = 30 V dc, IC = 0.5 A dc, IB1 = 0.05 A dc ton s -- 0.25 Turn-Off Time VCC = 30 Vdc, IC = 0.5 A dc, IB1 = IB2 = .05 A dc toff s -- 2.5 Safe Operating Area DC Tests: TC = +25 C, I Cycle, t = 1.0 s Test 1: VCE = 6.25 V dc, IC = 4 A dc Test 2: VCE = 20 V dc, IC = 1.25 A dc Test 3: VCE = 50 V dc, IC = 150 mA dc, 2N3766 VCE = 65 V dc, IC = 150 mA dc, 2N3767 3 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: info@vptcomponents.com 2N3766, 2N3767 NPN Power Silicon Transistor Rev. V4 Outline Drawing (TO-66) 4 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. 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