NPN Power Silicon Transistor
Rev. V4
2N3766, 2N3767
1
1
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1
Features
• Available in JAN, JANTX, JANTXV per MIL-PRF-
19500/518
• TO-66 Package
• Designed for High Speed Switching and High Voltage
Amplifier Applications
Electrical Characteristics (25oC unless otherwise specified)
Parameter Test Conditions Symbol Units Min. Max.
Off Characteristics
Collector - Emitter Breakdown Voltage IC = 100 mA dc, 2N3766
IC = 100 mA dc, 2N3767 V(BR)CEO V dc 60
80 —
Collector - Base Cutoff Current VCB = 80 Vdc 2N3766
VCB = 100 V dc 2N3767 ICBO µA dc — 10
10
Collector - Emitter Cutoff Current VCE = 60 V dc 2N3766
VCE = 80 V dc 2N3767 ICEO µA dc —
500
Collector - Emitter Cutoff Current VCE = 80 V dc, VBE = 1.5 Vdc, 2N3766
VCE = 100 Vdc, VBE = 1.5 Vdc, 2N3767 ICEX1 µA dc — 10
10
Collector - Emitter Cutoff Current
TA = +150oC
VBE = 1.5 V dc
VCE = 50 V dc, 2N3766
VCE = 70 V dc, 2N3767
ICEX2 mA dc — 1.0
1.0
Emitter - Base Cutoff Current VEB = 6 V dc IEBO µA dc — 500
On Characteristics
Forward Current Transfer Ratio
VCE = 5 V dc, IC = 50 mA dc
VCE = 5 V dc, IC = 500 mA dc
VCE = 10 V dc, IC = 1 A dc
hFE1
hFE2
hFE3
-
30
40
20
160
Forward Current Transfer Ratio TA = -55oC
VCE = 5.0 V dc, IC = 0.5 A dc hFE4 - 13
Base - Emitter Voltage (non-saturated) VCE = 10 V dc, IC = 1.0 A dc VBE V dc — 1.5
Collector - Emitter Voltage (saturated)
IC = 1.0 A dc, IB = 0.1 A dc
VCE(SAT)1 V dc —
2.5
Collector - Emitter Voltage (saturated) IC = 0.5 A dc, IB = 0.05 A dc VCE(SAT)2 V dc —
1.0
Base - Emitter Voltage (saturated) IC = 1.0 A dc, IB = 0.1 A dc VBE(SAT)1 V dc — 1.5
1.
NPN Power Silicon Transistor
Rev. V4
2N3766, 2N3767
2
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2
Absolute Maximum Ratings (25oC unless otherwise specified)
1. Between TC = +25oC and TC = +200oC, linear derating factor (average) = 143m/WoC.
Ratings Symbol Value
Collector - Emitter Voltage
2N3766
2N3767
VCEO
60 V dc
80 V dc
Collector - Base Voltage
2N3766
2N3767
VCBO
80 V dc
100 V dc
Emitter - Base Voltage VEBO 6.0 V dc
Base Current IB 2.0 A dc
Collector Current IC 4.0 A dc
Total Power Dissipation @ TC = +25°C1 PT 25 W
Junction & Storage Temperature Range TJ, TSTG -65°C to +200°C
Thermal Characteristics
Characteristics Symbol Max. Value
Thermal Resistance, Junction to Case RθJC 7.0oC/W
Dynamic Characteristics
Magnitude of Common Emitter Small-Signal
Short-Circuit Forward Current Transfer Ratio
VCE = 10 V dc, IC = 500 mA dc, f = 10
MHz | hFE | - 1 8
Open Capacitance (Open Circuit) VCB = 10 V dc, IE = 0, 0.1 MHz ≤ f ≤ 1 MHz Cobo pF — 50
NPN Power Silicon Transistor
Rev. V4
2N3766, 2N3767
3
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
3
Safe Operating Area
DC Tests: TC = +25 °C, I Cycle, t = 1.0 s
Test 1: VCE = 6.25 V dc, IC = 4 A dc
Test 2: VCE = 20 V dc, IC = 1.25 A dc
Test 3: VCE = 50 V dc, IC = 150 mA dc, 2N3766
VCE = 65 V dc, IC = 150 mA dc, 2N3767
Pulse Response Test Conditions Symbol Units Min. Max.
Turn-On Time VCC = 30 V dc, IC = 0.5 A dc,
IB1 = 0.05 A dc ton µs — 0.25
Turn-Off Time VCC = 30 Vdc, IC = 0.5 A dc,
IB1 = IB2 = .05 A dc toff µs — 2.5
Electrical Characteristics (25oC unless otherwise specified)
NPN Power Silicon Transistor
Rev. V4
2N3766, 2N3767
4
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
4
Outline Drawing (TO-66)
NPN Power Silicon Transistor
Rev. V4
2N3766, 2N3767
5
5
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
5
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