IRF7307
HEXFET® Power MOSFET
PD - 9.1242B
8/25/97
lGeneration V Technology
lUltra Low On-Resistance
lDual N and P Channel Mosfet
lSurface Mount
lAvailable in Tape & Reel
lDynamic dv/dt Rating
lFast Switching
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
D1
N -C HAN NEL MO SFET
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
81
2
3
45
6
7
SO-8
Description
N-Ch P-Ch
VDSS 20V -20V
RDS(on) 0.050Ω0.090Ω
Max.
N-Channel P-Channel
ID @ TA = 25°C 10 Sec. Pulse Drain Current, VGS @ 4.5V 5.7 -4.7
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 5.2 -4.3
ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 4.1 -3.4
IDM Pulsed Drain Current 21 -17
PD @TA = 25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt 5.0 -5.0 V/ns
TJ,
TSTG Junction and Storage Temperature Range -55 to + 150 °C
Parameter Units
A
Absolute Maximum Ratings
Thermal Resistance Ratings
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient––– 62.5 °C/W
IRF7307
Parameter Min. Typ. Max. Units Conditions
N-Ch 20 — — VGS = 0V, ID = 250µA
P-Ch -20 — — VGS = 0V, ID = -250µA
N-Ch — 0.044 — Reference to 25°C, ID = 1mA
P-Ch — -0.012 — Reference to 25°C, ID = -1mA
— — 0.050 VGS = 4.5V, ID = 2.6A
— — 0.070 VGS = 2.7V, ID = 2.2A
— — 0.090 VGS = -4.5V, ID = -2.2A
— — 0.140 VGS = -2.7V, ID = -1.8A
N-Ch 0.70 — — VDS = VGS, ID = 250µA
P-Ch -0.70 — — VDS = VGS, ID = -250µA
N-Ch 8.30 — — VDS = 15V, ID = 2.6A
P-Ch 4.00 — — VDS = -15V, ID = -2.2A
N-Ch — — 1.0 VDS = 16V, VGS = 0V
P-Ch — — -1.0 VDS = -16V, VGS = 0V,
N-Ch — — 25 VDS = 16V, VGS = 0V, TJ = 125°C
P-Ch — — -25 VDS = -16V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ± 12V
N-Ch — — 20
P-Ch — — 22
N-Ch — — 2.2
P-Ch — — 3.3
N-Ch — — 8.0
P-Ch — — 9.0
N-Ch — 9.0 —
P-Ch — 8.4 —
N-Ch — 42 —
P-Ch — 26 —
N-Ch — 32 —
P-Ch — 51 —
N-Ch — 51 —
P-Ch — 33 —
LDInternal Drain Inductace N-P — 4.0 — Between lead tip
LSInternal Source Inductance N-P — 6.0 — and center of die contact
N-Ch — 660 —
P-Ch — 610 —
N-Ch — 280 —
P-Ch — 310 —
N-Ch — 140 —
P-Ch — 170 —
Parameter Min. Typ. Max. Units Conditions
N-Ch — — 2.5
P-Ch — — -2.5
N-Ch — — 21
P-Ch — — -17
N-Ch — — 1.0 TJ = 25°C, IS = 1.8A, VGS = 0V
P-Ch — — -1.0 TJ = 25°C, IS = -1.8A, VGS = 0V
N-Ch — 29 44
P-Ch — 56 84
N-Ch — 22 33
P-Ch — 71 110
ton Forward Turn-On Time N-P
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient
RDS(ON) Static Drain-to-Source On-Resistance
VGS(th) Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
QgTotal Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on) Turn-On Delay Time
trRise Time
td(off) Turn-Off Delay Time
tfFall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 23 ) Pulse width ≤ 300µs; duty cycle ≤ 2%.
Notes:
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Source-Drain Ratings and Characteristics
V
V/°C
Ω
V
S
µA
nC
ns
nH
pF
N-Channel
ID = 2.6A, VDS = 16V, VGS = 4.5V
P-Channel
ID = -2.2A, VDS = -16V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 2.6A, RG = 6.0Ω,
RD = 3.8Ω
P-Channel
VDD = -10V, ID = -2.2A, RG = 6.0 Ω,
RD = 4.5Ω
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
N-Ch
P-Ch
ISContinuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
A
V
ns
nC
N-Channel
TJ = 25°C, IF = 2.6A, di/dt = 100A/µs
P-Channel
TJ = 25°C, IF = -2.2A, di/dt = 100A/µs
Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
N-Channel ISD ≤ 2.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -2.2A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Surface mounted on FR-4 board, t ≤ 10sec.
IRF7307
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
I , Dr ain-to-Sou rce Current (A)
D
V , Drain-to-Source Voltage (V)
DS
20µs P ULSE WIDTH
T = 25 °C A
V GS
TO P 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
1.5V
J
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage ( V)
DS
A
V GS
TO P 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
1.5V
20 µs PULSE WIDTH
T = 150° C
J
1
10
100
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
T = 25°C
T = 150°C
J
J
GS
V , G a te - to -So urc e Volta ge (V )
D
I , D rain-to-S ource Current (A)
A
V = 15 V
20µs PULSE W IDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction T em perature (°C )
R , D ra i n- to - So u r ce On Re si sta nce
DS(on)
(Normalized)
A
V = 4 .5V
GS
I = 4.3 A
D
0
300
600
900
1200
1 10 100
C , Capac itanc e (pF)
DS
V , Drain -to-S ourc e Voltage (V)
A
V = 0 V, f = 1 MH z
C = C + C , C S HOR TED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds g d
C
iss
C
oss
C
rss
0
2
4
6
8
10
0 5 10 15 20 25
Q , Total G ate Charge (nC )
G
V , Gate- to- Sour ce V oltage (V )
GS
A
I = 2.6 A
V = 16V
D
DS
FO R TE S T CIRCUIT
SEE FIG U RE 1 1
N-Channel
IRF7307
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C°°
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
Fig 7. Typical Source-Drain Diode
Forward Voltage Fig 8. Maximum Safe Operating Area
Fig 11a. Gate Charge Test Circuit
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
VDS
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
+
-
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
VDD
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
Q
G
Q
GS
Q
GD
V
G
Charge
Fig 11b. Basic Gate Charge Waveform
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
4.5V
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5
T = 25°C
T = 150° C
J
J
V = 0 V
GS
V , Source-to-Drain Voltage ( V)
I , Revers e D rain Current (A )
SD
SD
A
N-Channel
IRF7307
Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics
Fig 16. Typical Capacitance Vs.
Drain-to-Source Voltage Fig 17. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 15. Normalized On-Resistance
Vs. Temperature
Fig 14. Typical Transfer Characteristics
0.1
1
10
100
0.01 0.1 1 10 100
D
DS
20µs PUL SE W IDTH
T = 150° C A
-I , Dr ain-to-S ource Current (A)
-V , Drain-to-S ourc e Voltage (V)
J
V GS
TO P - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOT TO M - 1. 5V
-1.5V
0.1
1
10
100
0.01 0.1 1 10 100
D
DS
20µs P ULSE WIDTH
T = 25 °C A
-I , Drain-to-S ourc e Current (A )
-V , Dra in-to-S ource Vo ltage ( V)
J
V GS
TO P - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
-1.5V
0.1
1
10
100
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
T = 25°C T = 150°C
JJ
GS
D
A
-I , Dr ain-to- Sou rce C u r re n t ( A )
-V , Gate-to-Source Voltage (V)
V = -1 5V
20µs PULSE WID TH
DS 0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Tem per ature (°C )
R , Drain- to- Source On R esis tance
DS(on)
(Normalized)
A
I = -3. 6A
D
V = - 4.5 V
GS
0
500
1000
1500
1 10 100
C, Capacitance (pF)
A
DS
-V , Drain- to -So urc e V oltage (V)
V = 0V, f = 1 MHz
C = C + C , C SH ORTED
C = C
C = C + C
GS
iss gs gd d s
rss gd
oss d s gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
0 5 10 15 20 25
G
GS
A
-V , G a te-to -S ou rc e V oltage (V)
Q , T otal Gate Charge (nC)
I = - 2 .2 A
V = -1 6V
D
DS
FO R TE ST CIRCUIT
SE E FIG URE 2 2
P-Channel
IRF7307
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
1
10
100
1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C°°
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
1ms
10ms
+
-
Fig 18. Typical Source-Drain Diode
Forward Voltage Fig 19. Maximum Safe Operating Area
Fig 22a. Gate Charge Test Circuit
Fig 20. Maximum Drain Current Vs.
Ambient Temperature
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D.U.T.
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 21b. Switching Time Waveforms
Fig 21a. Switching Time Test Circuit
Q
G
Q
GS
Q
GD
V
G
Charge
Fig 22b. Basic Gate Charge Waveform
RG
VGS
VDS RD
VDD
-4.5V
D.U.T. V
DS
I
D
I
G
-3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-4.5V
0.1
1
10
100
0.3 0.6 0.9 1.2 1.5
T = 25° C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , R evers e D ra in C u rren t (A )
-V , Sour ce-to-Drain V oltage (V)
P-Channel
IRF7307
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
N & P-Channel
IRF7307
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
*
VGS*
**
Peak Diode Recovery dv/dt Test Circuit
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 24. For N and P Channel HEXFETS
IRF7307
Package Outline
SO-8 Outline
Dimensions are shown in millimeters (inches)
SO-8
Part Marking Information
EXAM PLE : THIS IS AN IRF7 101
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
W AF E R
L OT CODE
(LAST 4 DIGITS)
XXXX
BOTTOM
PART NUM BER
TOP
INTERNATIONAL
RECT IF IER
L OGO
F7101
312
K x 45°
C
8X
L
8X
θ
H
0.25 (.010) M A M
A
0.10 (.004)
B 8X
0.25 (.010) M C A S B S
- C -
6X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
1.78 (.070)
8X
6.46 ( .255 )
1.27 ( .050 )
3X
DIM INCHES MILLIMETERS
MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
θ
0° 8° 0° 8°
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
5
6
A1
e1
IRF7307
Tape & Reel Information
SO-8
Dimensions are shown in millimeters (inches)
4.10 ( .161)
3.90 ( .154)
1.60 (.062)
1.50 (.059)
1.85 (.072)
1.65 (.065)
5.30 (.208)
5.10 (.201)
5.55 (.218)
5.45 (.215)
2.60 (.102)
1.50 (.059)
6.50 (.255)
6.30 (.248)
8.10 (.318)
7.90 (.311)
FEED DIRECTION
TERMINATION
N UMBER 1
2.05 (.08 0)
1.95 (.07 7)
0.35 (.013)
0.25 (.010)
12.30 ( .484)
11.70 ( .461)
2.20 (.086)
2.00 (.079)
15.40 (.607)
11.90 (.469)
2
50.00
(1.969)
MIN.
18.40 ( .724)
M AX 3
14.40 (.566)
12.40 (.448)
3
330.00
(13.000)
MAX .
13.20 (.519)
12.80 (.504)
NOTES:
1 C ON FORMS TO EIA-481-1
2 INCLUDES FLANGE DIS TORTION @ OUTER EDGE
3 DIMENSIONS MEASURED @ HUB
4 CONTROLLING DIMENSION : ME TRIC
1
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http://www.irf.com/ Data and specifications subject to change without notice. 8 /9 7
