© 2013 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C - 200 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ- 200 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C - 90 A
IDM TC= 25°C, Pulse Width Limited by TJM - 270 A
IATC= 25°C - 90 A
EAS TC= 25°C 3.5 J
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 890 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Force (PLUS247) 20..120 / 4.5..27 N/lb.
Mounting Torque (TO-264) 1.13 / 10 Nm/lb.in.
Weight PLUS247 6 g
TO-264 10 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250μA - 200 V
VGS(th) VDS = VGS, ID = -1mA - 2.0 - 4.0 V
IGSS VGS = ±20V, VDS = 0V ±100 nA
IDSS VDS = VDSS , VGS = 0V - 50 μA
TJ = 125°C - 250 μA
RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 44 mΩ
PolarPTM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTK90P20P
IXTX90P20P
VDSS = - 200V
ID25 = - 90A
RDS(on) ≤≤
≤≤
≤ 44mΩΩ
ΩΩ
Ω
Features
zInternational Standard Packages
zRugged PolarPTM Process
zAvalanche Rated
zFast Intrinsic Diode
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
DS99933C(01/13)
Applications
zHigh-Side Switches
zPush Pull Amplifiers
zDC Choppers
zAutomatic Test Equipment
zCurrent Regulators
G = Gate D = Drain
S = Source Tab = Drain
PLUS247 (IXTX)
Tab
G
DS
TO-264 (IXTK)
S
G
D
Tab
IXTK90P20P
IXTX90P20P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = 0.5 • ID25, Note 1 30 51 S
Ciss 12 nF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 2210 pF
Crss 250 pF
td(on) 32 ns
tr 60 ns
td(off) 89 ns
tf 28 ns
Qg(on) 205 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 45 nC
Qgd 80 nC
RthJC 0.14 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V - 90 A
ISM Repetitive, Pulse Width Limited by TJM - 360 A
VSD IF = - 45A, VGS = 0V, Note 1 - 3.2 V
trr 315 ns
QRM 6.6 μC
IRM - 42 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
IF = - 45A, -di/dt = -150A/μs
VR = -100V, VGS = 0V
Terminals: 1 - Gate
2 - Drain
3 - Source
PLUS 247TM Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
TO-264 AA Outline
© 2013 IXYS CORPORATION, All Rights Reserved
IXTK90P20P
IXTX90P20P
Fi g . 1. Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
-90
-80
-70
-60
-50
-40
-30
-20
-10
0-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.50.0
V
DS
- Vo lts
I
D
- Amper es
V
GS
= - 10V
- 9V
- 8V
- 5
V
- 6
V
- 7
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
-240
-200
-160
-120
-80
-40
0-30-25-20-15-10-50
V
DS
- Vo lts
I
D
- Amperes
V
GS
= - 10V
- 9V
- 8
V
- 6
V
- 7
V
- 5
V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ T
J
= 125ºC
-90
-80
-70
-60
-50
-40
-30
-20
-10
0-8-7-6-5-4-3-2-10
V
DS
- Vo lts
I
D
- Amperes
V
GS
= - 10V
- 9V
- 8V
- 6
V
- 5
V
- 7
V
Fig. 4. R
DS(on)
Norm alized to I
D
= - 45A Value vs.
Junction Tem perature
0.4
0.8
1.2
1.6
2.0
2.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= - 10V
I
D
= - 90
A
I
D
= - 45
A
Fig. 5. R
DS(on)
Normalized to I
D
= - 45A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-240-210-180-150-120-90-60-300
I
D
- A mperes
R
DS(on)
- Normalized
V
GS
= - 10V
T
J
= 25ºC
T
J
= 125ºC
Fi g . 6. Maximu m D r ai n C u r rent vs.
Case Temp er ature
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Ampe res
IXTK90P20P
IXTX90P20P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
-120
-100
-80
-60
-40
-20
0-7.0-6.5-6.0-5.5-5.0-4.5-4.0-3.5-3.0 V
GS
- V olt s
I
D
- Amperes
TJ
= - 40ºC
25ºC
125ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
-140-120-100-80-60-40-200I
D
- A mperes
g
f s - Siemens
TJ
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-270
-240
-210
-180
-150
-120
-90
-60
-30
0-4.5-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.5 V
SD
- V olt s
I
S
- Amper es
TJ
= 125ºC
TJ = 25ºC
Fi g . 10. Gate Char g e
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
00 20 40 60 80 100 120 140 160 180 200 220
Q
G
- NanoCoulomb s
V
GS
- Volt s
VDS
= -100V
I D = - 45A
I G = -1mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
-40-35-30-25-20-15-10-50V
DS
- Volts
Capacitance - Pi coFarads
f
= 1MHz
Ciss
Crss
Coss
Fi g. 12. F o r ward -B ias Safe Operatin g Area
1
10
100
1,000
10 100 1000
V
DS
- V olt s
I
D
- Amper es
TJ = 150ºC
TC = 25ºC
Sing le Pulse
25µs
1ms
100µs
RDS(on) Limit
100ms
DC
-
----
10ms
-
-
© 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: T_90P20P(B9)03-25-09-D
IXTK90P20P
IXTX90P20P
Fig . 13. Maximum Tran sien t Th er mal I mp ed an ce
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- º C / W
