DBES105a
Ref. : DSDBES1051067 -08-Mar-01 1/4 Specif i cations subject t o change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Flip-Chip Dual Diode
GaAs Diode
Description
The DBES105a is a dual Schottky diode based
on a low cost 1µm stepper process including a
bump tec hnology. The parasitic induc tances are
reduced and result in a very high operating
frequency.
This flip-chip dual diode has been designed for
high performance mixer applications.
Main Features
High cut-off frequencies : 3THz
High breakdown voltage : < -5V
@ 20µA
Good ideality factor : 1.2
Low parasitic inductances
Low cost technology
Dimensions : 0.53 x 0.23 x 0.1mm
Main Characteristics
Tamb. = 25°C
Symbol Parameter Typ Unit
Wu Gate Width 5 µm
Fco Cut-off frequency 3 THz
n Ideality factor 1.2
BVak Anode-cathode break-down voltage < -5 V
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
DBES105a Flip-Chip Dual Diode
Ref. : DSDBES1051067 -08-Mar-01 2/4 Specif i cations subject t o change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Equivalent Ci rcuit
Rs(
)Cjo(fF) (0V) Cpar(fF) Fco(THz)
4.4 9.5 5.8 2.4
Fco = 1/(2π Rs [Cpar + Cjo])
Rp can be neglected
Absolute Maximum Ratings (1)
Tamb. = 25°C
Symbol Parameter Typ. values Unit
Vak Reverse anode-cathode voltage -5 V
Iak Forward anode-cathode current 10 mA
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Im ax vs Tam b
0
2
4
6
8
10
12
0 20406080100120
Tamb (°C)
I max( mA)
Rp
Rs
Cj0
Cpar
Flip-Chip Dual Diode DBES105a
Ref. : DSDBES1051067 -08-Mar-01 3/4 Specificat ions subj ect to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical DC Measurements
Typical On-Wafer Measurements
Bias Conditions Vak = 0V
UI-Characteristic
1E-11
1E-10
1E-09
1E-08
1E-07
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
0.00 0.25 0.50 0.75 1.00
Voltage UD [V]
Current |I
D
| [A]
-4.0 -3.0 -2.0 -1.0
1x5µm
Is = 3.5e-1 4 A
DBES105a Flip-Chip Dual Diode
Ref. : DSDBES1051067 -08-Mar-01 4/4 Specificat i ons subject to c hange without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Mechanical data
Dimensions in µm
Dimensions: 230 ± 35 x 530 ± 35 µm
Thickness= 100µm ± 10 µm
Orderi ng I nfor mation
Chip for m : DBES105a-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
530
460
3030
100
160
230
204204
26
diameter 20
26