DBES105a
Ref. : DSDBES1051067 -08-Mar-01 1/4 Specif i cations subject t o change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Flip-Chip Dual Diode
GaAs Diode
Description
The DBES105a is a dual Schottky diode based
on a low cost 1µm stepper process including a
bump tec hnology. The parasitic induc tances are
reduced and result in a very high operating
frequency.
This flip-chip dual diode has been designed for
high performance mixer applications.
Main Features
■ High cut-off frequencies : 3THz
■ High breakdown voltage : < -5V
@ 20µA
■ Good ideality factor : 1.2
■ Low parasitic inductances
■ Low cost technology
■ Dimensions : 0.53 x 0.23 x 0.1mm
Main Characteristics
Tamb. = 25°C
Symbol Parameter Typ Unit
Wu Gate Width 5 µm
Fco Cut-off frequency 3 THz
n Ideality factor 1.2
BVak Anode-cathode break-down voltage < -5 V
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !