2N7002
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N7002 type is a
N-Channel Field Effect Transistor, manufactured by the
N-Channel DMOS Process, designed for high speed
pulsed amplifier and driver applications.
MARKING CODE: 702
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Drain-Source Voltage VDS 60 V
Drain-Gate Voltage VDG 60 V
Gate-Source Voltage VGS 40 V
Continuous Drain Current (TC=25°C) ID 115 mA
Continuous Drain Current (TC=100°C) ID 75 mA
Continuous Source Current (Body Diode) IS 115 mA
Maximum Pulsed Drain Current IDM 800 mA
Maximum Pulsed Source Current ISM 800 mA
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IGSSF V
GS=20V 100 nA
IGSSR VGS=20V 100 nA
IDSS V
DS=60V, VGS=0 1.0 μA
IDSS V
DS=60V, VGS=0, TA=125°C 500 μA
ID(ON) VDS=10V, VGS=10V 500 mA
BVDSS I
D=10μA 60 105 V
VGS(th) VDS=VGS, ID=250μA 1.0 2.1 2.5 V
VDS(ON) VGS=10V, ID=500mA 3.75 V
VDS(ON) VGS=5.0V, ID=50mA 0.375 V
VSD VGS=0, IS=11.5mA 1.5 V
rDS(ON) V
GS=10V, ID=500mA 3.7 7.5 Ω
rDS(ON) V
GS=10V, ID=500mA, TA=100°C 13.5 Ω
rDS(ON) V
GS=5.0V, ID=50mA 6.2 7.5 Ω
rDS(ON) V
GS=5.0V, ID=50mA, TA=100°C 13.5 Ω
gFS V
DS=10V, ID=200mA 80 mS
SOT-23 CASE
R5 (31-January 2011)
www.centralsemi.com
2N7002
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: 702
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MAX UNITS
Crss V
DS=25V, VGS=0, f=1.0MHz 5.0 pF
Ciss V
DS=25V, VGS=0, f=1.0MHz 50 pF
Coss VDS=25V, VGS=0, f=1.0MHz 25 pF
ton VDD=30V, ID=200mA, RG=25Ω, RL=150Ω 20 ns
toff VDD=30V, ID=200mA, RG=25Ω, RL=150Ω 20 ns
www.centralsemi.com
R5 (31-January 2011)
