FDS4435BZ P-Channel PowerTrench(R) MOSFET -30V, -8.8A, 20m: Features General Description Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A This Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A Semiconductor's advanced PowerTrench(R) process that has Extended VGSS range (-25V) for battery applications been especially tailored to minimize the on-state resistance. HBM ESD protection level of 3.8KV typical (note 3) This device is well suited for Power Management and load High performance trench technology for extremely low rDS(on) switching applications common in Notebook Computers and High power and current handling capability Portable Battery Packs. P-Channel MOSFET is produced using Fairchild Termination is Lead-free and RoHS compliant D D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S D G S S Pin 1 S SO-8 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID TA = 25C (Note 1a) -Pulsed PD Ratings -30 Units V 25 V -8.8 -50 Power Dissipation TA = 25C (Note 1a) 2.5 Power Dissipation TA = 25C (Note 1b) 1.0 EAS Single Pulse Avalanche Energy TJ, TSTG Operating and Storage Junction Temperature Range (Note 4) A W 24 mJ -55 to +150 C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient 25 (Note 1a) 50 C/W Package Marking and Ordering Information Device Marking FDS4435BZ Device FDS4435BZ (c)2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1 Package SO-8 1 http://store.iiic.cc/ Reel Size 13'' Tape Width 12mm Quantity 2500units www.fairchildsemi.com FDS4435BZ P-Channel PowerTrench(R) MOSFET April 2009 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250PA, VGS = 0V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient -30 V ID = -250PA, referenced to 25C IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS = 0V 1 PA IGSS Gate to Source Leakage Current VGS = 25V, VDS = 0V 10 PA -3 V mV/C -21 On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250PA, referenced to 25C 6 VGS = -10V, ID = -8.8A 16 20 rDS(on) Static Drain to Source On Resistance VGS = -4.5V, ID = -6.7A 26 35 VGS = -10V, ID = -8.8A, TJ = 125C 22 28 VDS = -5V, ID = -8.8A 24 gFS Forward Transconductance -1 -2.1 mV/C m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -15V, VGS = 0V, f = 1MHz f = 1MHz 1385 1845 275 365 pF pF 230 345 pF : 4.5 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time VDD = -15V, ID = -8.8A, VGS = -10V, RGEN = 6: td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to -10V Qg Total Gate Charge VGS = 0V to -5V Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge VDD = -15V, ID = -8.8A 10 20 ns 6 12 ns 30 48 ns 12 22 ns 28 40 nC 16 23 nC 5.2 nC 7.4 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = -8.8A (Note 2) IF = -8.8A, di/dt = 100A/Ps -0.9 -1.2 V 29 44 ns 23 35 nC NOTES: 1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. a. 50C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. Starting TJ = 25C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V (c)2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1 2 http://store.iiic.cc/ www.fairchildsemi.com FDS4435BZ P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted 4.0 50 40 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -10V VGS = -5V VGS = -4.5V 30 VGS = -4V 20 VGS = -3.5V 10 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 0 0 1 2 3 3.0 VGS = -4.5V 2.5 VGS = -4V 1.5 VGS = -10V 1.0 0.5 0 4 10 20 30 40 50 -ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 60 ID = -8.8A VGS = -10V 1.2 1.0 0.8 0.6 -75 -50 -25 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX ID = -8.8A rDS(on), DRAIN TO 1.4 0 25 50 75 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -5V 2.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) 50 40 TJ = 125oC 30 20 TJ = 25oC 10 100 125 150 2 o TJ, JUNCTION TEMPERATURE ( C) 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 50 100 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX VGS = -3.5V 3.5 40 VDS = -5V 30 20 TJ = 150oC 10 TJ = 25oC TJ =-55oC 0 1 2 3 4 VGS = 0V 10 1 0.1 0.01 0.001 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics (c)2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1 TJ = -55oC 0.0001 0.0 5 TJ = 25oC TJ = 150oC Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 http://store.iiic.cc/ www.fairchildsemi.com FDS4435BZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 4000 ID = -8.8A Ciss 8 CAPACITANCE (pF) VDD = -10V 6 VDD = -15V VDD = -20V 4 2 1000 Coss Crss f = 1MHz VGS = 0V 0 0 5 10 15 20 25 100 0.1 30 1 Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage -4 10 -Ig, GATE LEAKAGE CURRENT(A) -IAS, AVALANCHE CURRENT(A) 20 10 TJ = 25oC TJ = 125oC VDS = 0V -5 10 TJ = 125oC -6 10 -7 10 TJ = 25oC -8 10 -9 1 0.01 0.1 1 10 10 30 0 5 10 15 20 25 30 -VGS, GATE TO SOURCE VOLTAGE(V) tAV, TIME IN AVALANCHE(ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Gate Leakage Current vs Gate to Source Voltage 100 10 8 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 30 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = -10V 6 VGS = -4.5V 4 2 100us 10 1ms 10ms 1 THIS AREA IS LIMITED BY rDS(on) 0.1 100ms SINGLE PULSE TJ = MAX RATED 1s 10s DC o RTJA = 125 C/W o TA = 25oC RTJA = 50 C/W 0.01 0.1 0 25 50 75 100 125 150 o TA, AMBIENT TEMPERATURE ( C) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature (c)2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1 1 10 80 -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Forward Bias Safe Operating Area 4 http://store.iiic.cc/ www.fairchildsemi.com FDS4435BZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 1000 VGS = -10 V SINGLE PULSE o RTJA = 125 C/W o TA = 25 C 100 10 1 0.5 -4 10 -3 -2 10 -1 10 10 1 10 100 1000 t, PULSE WIDTH (s) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA o RTJA = 125 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Transient Thermal Response Curve (c)2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1 5 http://store.iiic.cc/ www.fairchildsemi.com FDS4435BZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 (c)2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1 www.fairchildsemi.com http://store.iiic.cc/ FDS4435BZ P-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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