T4-LDS-0216, Rev. 1 (111512) ©2011 Microsemi Corporation Page 1 of 3
1N5186 thr u 1N5188, 1N5190
Available on
commercial
versions
VOIDLESS-HERMETICALLY S EALED FAST
RECOVERY GL ASS RECTIFIERS
Qualified per MIL-PRF-19500/424
Quali f i ed Lev els:
JAN, JAN TX
and JANTXV
DESCRIPTION
This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. These industry-recogniz ed 3.0 amp rated
rectifiers for working peak reverse voltages from 100 to 600 volts are hermetically sealed with
voidless-glass construction using an internal “Category 1” metallurgical bond. Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings with various
recovery time speed requirements including fast and ult r afa st device types in both thr ough-hole
and surface mount packages.
“B” Package
Important: For the latest infor mation, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 1N5186 thru 1N5190 series.
• Voidless hermetically sealed glass package.
• Working Peak Reverse Voltage 100 to 600 volts.
• Internal “Category I” metallurgical bond.
• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/424.
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENE FITS
• Fast recovery 3 amp 100 to 600 volt rectifiers.
• Military and other high-reliability applications.
• General rectifier applications including bridges, half-brid ges, catch diode s, etc.
• High forward surge current capability.
• Extremely robust construction.
• Low thermal resistance.
• Controlled avalanche wi th peak reverse power capability.
• Inherently radiation hard as described in Microsemi “Micr oNote 050 ”.
MAX IMUM RATIN GS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Junction and Storage Temperature
TJ and TSTG
-65 to +175
Thermal Resistance Junction-to-Lead (1)
RӨJL
20
Forward Surge Current @ 8.3 ms ha lf-sine, TA = +150 oC
IFSM
80
Working Peak Reverse Voltage
1N5186
1N5187
1N5188
1N5190
V
RWM
100
200
400
600
Average Rectified Forw ard Current @ T
A
= +25 oC
@ T A = +150
o
C
I
O
3.0
0.700
Maximum Reverse Recovery Time
1N5186
1N5187
1N5188
1N5190
t
rr
150
200
250
400
Solder Temperature @ 10 s
TSP
260
Notes: 1. At 3/8 inch (10 mm) lead length from body.
T4-LDS-0216, Rev. 1 (111512) ©2011 Microsemi Corporation Page 2 of 3
1N5186 thru 1N518 8, 1N5190
M ECHANICAL and PACKAG ING
• CASE: Hermetically seal ed voidless hard glass with tungsten slugs.
• TERMINALS: Tin/lead (Sn/Pb) over nickel (Ni) coat or RoHS compliant matte-tin (commercial grade only) over copper.
• MARKING: Body is coated and marked with part number.
• POLARITY: Cathode band.
• TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
• WEIGHT: 797 milligrams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 1N5186 e3
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
JEDEC type number
See Electric al Characteristics
table
SYMBOL S & DEFI NITIONS
Symbol
Definition
V(BR)
Minimum Breakdown Vol tage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Voltage: The maxi mum peak voltage that can be applied over the operating temperature
range.
VF
Maximum Forward Voltage: The maximum forw ard voltage the device will exhibit at a specified current.
IR
Maximum Leakage Current: The maximum leakage current that wi ll flow at the specified voltage and temperature.
trr
Reverse Recovery Time: The tim e interval between the instant the current passes through zero when changing from
the forward directi on to the reverse direction and a specified decay point after a peak reverse current occurs.
ELECTRICAL CHARACTERI STICS
TYPE
MINIMUM
BREAKDOWN
VOLTAGE
V(BR) @ 100
µ
A
FORWARD
VOLTAGE
VF @ 9 A (pulsed)
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
Volts
MIN
Volts
MAX
Volts
25 oC
100 oC
µA
µA
1N5186
1N5187
1N5188
1N5190
120
240
480
660
0.9
0.9
0.9
0.9
1.5
1.5
1.5
1.5
2.0
2.0
2.0
2.0
100
100
100
100
T4-LDS-0216, Rev. 1 (111512) ©2011 Microsemi Corporation Page 3 of 3
1N5186 thru 1N518 8, 1N5190
PACKAGE DIMENSIONS
Symbol
Dimension
Notes
Inch
Millimeters
Min
Max
Min
Max
BD
0.115
0.155
2.92
3.94
3
LD
0.038
0.042
0.97
1.07
BL
0.150
0.300
3.81
7.62
4
LL
1.00
1.50
25.40
38.10
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Di men sion BD sh all be measured at the largest diameter. The BL dimension shall include the entire body including slugs.
4. Dimension BL shall include the sections of the lead over which the diameter is uncontrolled.
This uncontrolled area is defi ned as the zone between the edge of the diode body and extending .050 inch (1.27
mm) onto the leads.
5. In accordance with ASME Y14.5M, diameters are equival ent to Φx symbology.