2SK3537-01MR 200304 FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg Ratings 150 130 33 132 20 33 169 20 5 2.16 53 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) Source(S) C C < *1 L=0.228mH, Vcc=48V,Tch=25C, See to Avalanche Energy Graph *2 Tch=150C < < < < *3 IF=-ID, -di/dt=50A/s, Vcc=BVDSS, Tch=150C *4 VDS =150V *5 VGS=-20V Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Symbol V(BR)DSS VGS(th) IDSS Gate-source leakage current Drain-source on-state resistance IGSS RDS(on) Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID=250A VGS=0V ID= 250A VDS=VGS VDS=150V VGS=0V Tch=25C VDS=120V VGS=0V Tch=125C VGS=20V VDS=0V VGS=4V ID=11.5A VGS=5V VGS=10V ID=11.5A VDS=25V Min. 12 VDS =75V VGS=0V f=1MHz VCC=48V ID=11.5A VGS=10V RGS=10 V CC =48V ID=23A VGS=10V L=228H Tch=25C IF=23A VGS=0V Tch=25C IF=23A VGS=0V -di/dt=100A/s Tch=25C Typ. 150 1.0 10 65 60 54 24 1900 200 17 10 15 85 12 46 8 12.5 Max. 2.5 25 250 100 90 81 70 2850 300 25.5 15 23 128 18 70 12 19 33 1.10 0.13 0.6 1.65 Units V V A nA m S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 2.359 58.0 Units C/W C/W 1 2SK3537-01MR FUJI POWER MOSFET Characteristics 60 Allowable Power Dissipation PD=f(Tc) 500 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V 55 IAS=14A 50 400 45 40 EAS [mJ] PD [W] IAS=20A 300 35 30 25 200 IAS=33A 20 15 100 10 5 0 0 0 25 50 75 100 125 150 0 25 Tc [C] 55 75 100 125 150 starting Tch [C] Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 20V 10V 8V 50 50 Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 100 5.0V 45 4.5V 40 10 ID[A] ID [A] 35 30 4.0V 25 20 1 15 VGS=3.5V 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 5.0 VDS [V] VGS[V] Typical Transconductance Typical Drain-Source on-state Resistance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C RDS(on)=f(ID):80s Pulse test, Tch=25C 0.16 100 VGS=3.5V 4.0V 0.14 RDS(on) [ ] 0.12 gfs [S] 10 4.5V 0.10 5.0V 0.08 8V 10V 0.06 20V 1 0.04 0.02 0.1 0.1 0.00 1 10 100 ID [A] 0 10 20 30 40 50 ID [A] http://store.iiic.cc/ 2 2SK3537-01MR 0.20 FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=11.5A,VGS=10V 4.0 0.18 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 3.5 0.16 3.0 VGS(th) [V] RDS(on) [ ] 0.14 0.12 0.10 max. 2.5 2.0 max. 0.08 1.5 typ. 0.06 min. 1.0 0.04 0.5 0.02 0.0 0.00 -50 -25 0 25 50 75 100 125 -50 150 -25 0 25 Tch [C] 75 100 125 150 Tch [C] Typical Gate Charge Characteristics 24 50 VGS=f(Qg):ID=23A, Tch=25C 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 22 20 Ciss 18 1n Vcc= 48V 16 C [F] VGS [V] 14 12 Coss 100p 10 8 6 Crss 10p 4 2 0 0 10 20 30 40 50 60 70 80 90 1p -1 10 100 0 1 10 100 2 10 Qg [nC] 10 3 10 VDS [V] Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID IF=f(VSD):80s Pulse test,Tch=25C t=f(ID):Vcc=48V, VGS=10V, RG=10 VGS=10V VGS=0V 3 10 2 td(off) tf t [ns] IF [A] 10 10 1 10 td(on) 1 tr 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 10 0 -1 10 10 0 10 1 10 2 ID [A] VSD [V] http://store.iiic.cc/ 3 2SK3537-01MR FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V 2 Avalanche Current I AV [A] 10 Single Pulse 1 10 0 10 10 -1 -2 10 -8 10 -7 10 10 -6 -5 10 -4 10 10 -3 -2 10 Zth(ch-c) [C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ http://store.iiic.cc/ 4