2N6031 - Central Semiconductor Corp.

MAXIMUM RATINGS: (TC=25°C) SYMBOL UNITS

Collector-Base Voltage VCBO 140 V

Collector-Emitter Voltage VCEO 140 V

Emitter-Base Voltage VEBO 7.0 V

Continuous Collector Current IC16 A

Peak Collector Current ICM 20 A

Continuous Base Current IB5.0 A

Power Dissipation PD200 W

Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C

Thermal Resistance ΘJC 0.875 °C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS MIN MAX UNITS

ICBO VCB=140V 2.0 mA

ICEX VCE=140V, VEB(off)=1.5V 2.0 mA

ICEX VCE=140V, VEB(off)=1.5V, TC=150°C 7.0 mA

ICEO VCE=70V 2.0 mA

IEBO VEB=7.0V 5.0 mA

BVCEO IC=200mA 140 V

VCE(SAT) IC=10A, IB=1.0A 1.0 V

VCE(SAT) IC=16A, IB=4.0A 2.0 V

VBE(SAT) IC=10A, IB=1.0A 1.8 V

VBE(ON) VCE=2.0V, IC=8.0A 1.5 V

hFE VCE=2.0V, IC=8.0A 15 60

hFE VCE=2.0V, IC=16A 4.0

fTVCE=20V, IC=1.0A, f=500kHz 1.0 MHz

Cob VCB=10V, IE=0, f=100kHz 1000 pF

hfe VCE=10V, IC=4.0A, f=1.0kHz 15

2N6031

PNP SILICON

POWER TRANSISTOR

140 VOLTS, 200 WATTS

TO-3 CASE

Central

Semiconductor Corp.

R0 (27-August 2009)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6031 is

a 16 Ampere PNP Silicon Power Transistor

designed for use in high power amplifiers and

high voltage switching regulator circuits.

MARKING: FULL PART NUMBER