"PMEG2010EA,135" - NXP SEMICONDUCTORS

DATA SH EET

Product data sheet

Supersedes data of 2002 Dec 10 2004 Feb 06

DISCRETE SEMICONDUCTORS

PMEG2010EA

Low VF (MEGA) Schottky barrier

diode

2004 Feb 06 2

NXP Semiconductors Product data sheet

Low VF (MEGA) Schottky barrier diode PMEG2010EA

FEATURES

•Forward current: 1 A

•Reverse voltage: 20 V

•Ultra high-speed switching

•Very low forward voltage

•Very small plastic SMD package.

APPLICATIONS

•Ultra high-speed switching

•Voltage clamping

•Protection circuits.

DESCRIPTION

Planar Maximum Efficiency Ge neral Application (MEGA)

Schottky barrier diode w ith an integrated guard ring for

stress protection, encapsulated in a SOD323 (SC-76) very

small SMD plastic package.

PINNING

PIN DESCRIPTION

1cathode

2anode

col

umns 12

MGU328

Fig.1 Simplified outline (SOD323; SC-76) and

symbol.

Marking code: E1.

The marking bar indicates the cathode.

ORDERING INFORMATION

LIMITING VALUES

In accordance with the A bsolute Maxi mum Rating Sys tem (IEC 60134).

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

PMEG2010EA −plastic surface mounted package; 2 leads SOD323

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VRcontinuous revers e voltage −20 V

IFcontinuous forward current −1 A

IFSM non-repetitive peak forward current tp = 8.3 ms half sinewave;

JEDEC method −5 A

Tstg storage temperature −65 +150 °C

Tjjunction temperature −125 °C

Tamb operating ambient temperature −65 +125 °C

2004 Feb 06 3

NXP Semiconductors Pr oduct data shee t

Low VF (MEGA) Schottky barrier diode PMEG2010EA

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulsed test: tp = 300 μs; δ = 0.02.

THERMAL CHARACTE RISTICS

Notes

1. Device mounted o n an FR4 printed-circuit board wi th Cu clad 10 x 10 mm.

2. Device mounted o n an FR4 printed-circuit board wi th Cu clad 40 x 40 mm.

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VFcontinuous forward voltage see Fig.2; note 1

IF = 10 mA 240 270 mV

IF = 100 mA 300 350 mV

IF = 1 000 mA 480 550 mV

IRcontinuous reverse current see Fig.3; note 1

VR = 5 V 5 10 μA

VR = 8 V 7 20 μA

VR = 15 V 10 50 μA

Cddiode capacitan ce VR = 5 V; f = 1 MHz; see Fig.4 19 25 pF

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 220 K/W

note 2 180 K/W

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NXP Semiconductors Pr oduct data shee t

Low VF (MEGA) Schottky barrier diode PMEG2010EA

GRAPHICAL DATA

handbook, halfpage

0.60.20 0.4 VF (V)

(mA)

103

102

10−1

MHC311

(1) (2) (3)

Fig.2 Forward current as a function of forward

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

250 51015

(μA)

20 VR (V)

105

104

103

102

MHC312

(1)

(2)

(3)

Fig.3 Reverse current as a fun ction of reverse

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

(pF)

10 20

15 VR (V)

MHC313

Fig.4 Diode capacitance as a function of reverse

voltage; typical values.

Tamb = 25 °C; f = 1 MHz.

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NXP Semiconductors Pr oduct data shee t

Low VF (MEGA) Schottky barrier diode PMEG2010EA

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOD323 SC-76

SOD32

03-12-17

06-03-16

Note

1. The marking bar indicates the cathode

UNIT A

mm 0.05

1.1

0.8 0.40

0.25 0.25

0.10 1.8

1.6 1.35

1.15 2.7

2.3 0.45

0.15

max

DIMENSIONS (mm are the original dimensions)

lastic surface-mounted package; 2 leads

(1)

2 mm

scale

bpc D E HDQ

0.25

0.15

Lpv

0.2

detail X

A1c

HDvA

2004 Feb 06 6

NXP Semiconductors Pr oduct data shee t

Low VF (MEGA) Schottky barrier diode PMEG2010EA

DATA SHEET STATUS

Notes

1. Please consult the mos t recently issued document befor e initiating or co mpleting a design.

2. The product status of device (s) described in this document may have changed since this do cument was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such information.

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reserves the right to make changes to informa tion

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reason ably be

expected to result in pe rs onal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification .

Limiting values ⎯ Stress abov e on e or more limit ing

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values a re s t ress ratings only and

operation of the device at these or an y other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict between information

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No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, conveyance or

implication of any license under any copyrights, patents or

other industr i al or inte llectual property rights.

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described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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The information pr e sent ed in this document d oes not form part of an y q uot ation or co ntract, is believed to be a ccur ate a nd re li a ble and may be chan ged

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R76/02/pp7 Date of release: 2004 Feb 06 Document orde r number: 9397 750 12626